World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
7207
World Ranking
4848
National Ranking
194

Research.com Recognitions

  • 2012 - IEEE Fellow For contributions to silicon quantum dot devices

Overview

Shunri Oda is affiliated with the Tokyo Institute of Technology in Japan and conducts research primarily within the fields of engineering and materials science. Their work spans several subfields including electrical and electronic engineering, atomic and molecular physics and optics, materials chemistry, biomedical engineering, and electronic, optical, and magnetic materials.

The scientist's main topics of research cover advancements in semiconductor devices and circuit design, optical network technologies, quantum and electron transport phenomena, semiconductor materials and devices, semiconductor materials and interfaces, 2D materials and applications, and advanced photonic communication systems.

Frequent publication venues for Shunri Oda include:

  • IET conference proceedings
  • Applied Physics Letters
  • Optical Engineering
  • Nanoscale Advances
  • Japanese Journal of Applied Physics

Key recent papers authored or co-authored by Shunri Oda are:

  • "Fibre type identification based on power profile estimation," 2023, IET conference proceedings
  • "Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures," 2020, Applied Physics Letters
  • "Temperature dependence of hole transport properties through physically defined silicon quantum dots," 2020, Applied Physics Letters
  • "Graphene-based midinfrared photodetector with bull's eye plasmonic antenna," 2023, Optical Engineering
  • "Multi-channel longitudinal power profile estimation," 2023, IET conference proceedings

Shunri Oda has collaborated frequently with co-authors such as Masatoshi Eto, Ryu Shinzaki, Ryoichi Ishihara, Tetsuo Kodera, and Takamasa Kawanago.

In 2012, Shunri Oda received the IEEE Fellow award for contributions to silicon quantum dot devices.

Best Publications

  • A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

    Jun Yoneda;Kenta Takeda;Tomohiro Otsuka;Tomohiro Otsuka;Takashi Nakajima

  • A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise

    J. Yoneda;K. Takeda;T. Otsuka;T. Nakajima

  • A fault-tolerant addressable spin qubit in a natural silicon quantum dot

    Kenta Takeda;Jun Kamioka;Tomohiro Otsuka;Jun Yoneda

  • A flexible and wearable terahertz scanner

    D. Suzuki;S. Oda;Y. Kawano

  • Photoluminescence mechanism in surface-oxidized silicon nanocrystals

    Yoshihiko Kanemitsu;Shinji Okamoto;Masanori Otobe;Shunri Oda

  • Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma

    Toru Ifuku;Masanori Otobe;Akira Itoh;Shunri Oda

  • Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements

    Shaoyun Huang;Souri Banerjee;Raymond T. Tung;Shunri Oda

  • Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique

    K. Nishiguchi;Xinwei Zhao;S. Oda

  • Electron Transport in Nanocrystalline Si Based Single Electron Transistors

    Amit Dutta;Shunri Oda;Ying Fu;Magnus Willander

  • ZnS blue‐light‐emitting diodes with an external quantum efficiency of 5×10−4

    Hirohiko Katayama;Shunri Oda;Hiroshi Kukimoto

  • A novel quantization scheme by slicing supercontinuum spectrum for all-optical analog-to-digital conversion

    S. Oda;A. Maruta

  • Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition

    Naoki Shibata;Kaichi Fukuda;Hirokazu Ohtoshi;Jun-ichi Hanna

  • Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films

    Shunri Oda;Jun'ichirou Noda;Masakiyo Matsumura

  • Charge injection and trapping in silicon nanocrystals

    M. A. Rafiq;Y. Tsuchiya;H. Mizuta;S. Oda

  • Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement

    Shaoyun Huang;Souri Banerjee;Raymond T. Tung;Shunri Oda

  • Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory

    Bruce J. Hinds;Takayuki Yamanaka;Shunri Oda

  • Growth of Amorphous and Crystalline Silicon by HR-CVD (Hydrogen Radical Enhanced CVD)

    N. Shibata;K. Fukuda;H. Ohtoshi;J. Hanna

  • Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots

    G. Yamahata;G. Yamahata;T. Kodera;T. Kodera;T. Kodera;H. O.H. Churchill;Ken Uchida

  • Study of structural and optical properties of nanocrystalline silicon embedded in SiO2

    F Yun;B.J Hinds;S Hatatani;S Oda

  • Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing

    Amit Dutta;Masao Kimura;Yoshiaki Honda;Masanori Otobe

  • Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition

    Masanori Otobe;Shunri Oda

  • Frequency effects in processing plasmas of the VHF band

    S Oda

  • Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots

    Yoshishige Tsuchiya;Kosuke Takai;Nobuyuki Momo;Tasuku Nagami

  • All-optical digital-to-analog conversion using nonlinear optical loop mirrors

    S. Oda;A. Maruta

  • Process for the preparation of photoelectromotive force member

    Shunichi Ishihara;Keishi Saito;Shunri Oda;Isamu Shimizu

  • Electron transport in a single silicon quantum structure using a vertical silicon probe

    Katsuhiko Nishiguchi;Shunri Oda

Frequent Co-Authors

William I. Milne
William I. Milne University of Cambridge
Magnus Willander
Magnus Willander Linköping University
Raymond T. Tung
Raymond T. Tung City University of New York
Kohei M. Itoh
Kohei M. Itoh Keio University
Noritaka Usami
Noritaka Usami Nagoya University
Haroon Ahmed
Haroon Ahmed University of Cambridge
Kunji Chen
Kunji Chen Nanjing University
Kaustav Banerjee
Kaustav Banerjee University of California, Santa Barbara
Andrea C. Ferrari
Andrea C. Ferrari University of Cambridge
Shin-ya Koshihara
Shin-ya Koshihara Tokyo Institute of Technology

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