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P. Roca i Cabarrocas

P. Roca i Cabarrocas

D-Index & Metrics

Materials Science

D-Index
65
Citations
14289
World Ranking
5660
National Ranking
140

P. Roca i Cabarrocas publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where P. Roca i Cabarrocas sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 701 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

P. Roca i Cabarrocas D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where P. Roca i Cabarrocas sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 65 D-Index — 57th percentile

57% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

P. Roca i Cabarrocas is affiliated with École Polytechnique in France. Their research encompasses a range of topics primarily within Engineering, with a significant focus on Electrical and Electronic Engineering as well as Biomedical Engineering and Materials Chemistry. They have contributed extensively to advancing knowledge in subfields such as Atomic and Molecular Physics, Optics, and Condensed Matter Physics.

The scientist's main topics of research include:

  • Thin-Film Transistor Technologies
  • Nanowire Synthesis and Applications
  • Silicon and Solar Cell Technologies
  • Silicon Nanostructures and Photoluminescence
  • Semiconductor materials and interfaces
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices

They have frequently published in journals such as Applied Surface Science, Solar Energy Materials and Solar Cells, HAL (Le Centre pour la Communication Scientifique Directe), SSRN Electronic Journal, and EPJ Photovoltaics.

Among recent published papers are:

  • Highly flexible radial tandem junction thin film solar cells with excellent power-to-weight ratio, 2021, Nano Energy
  • Single-Crystal Nanowire Cesium Tin Triiodide Perovskite Solar Cell, 2023, Small
  • Liquid-Assisted Vapor-Solid-Solid Silicon Nanowire Growth Mechanism Revealed by In Situ TEM When Using Cu-Sn Bimetallic Catalysts, 2021, The Journal of Physical Chemistry C
  • Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 °C) and APCVD (1130 °C), 2021, Applied Surface Science
  • Three-Terminal Monolithic Perovskite/Silicon Tandem Solar Cell Exceeding 29% Power Conversion Efficiency, 2023, ACS Energy Letters

P. Roca i Cabarrocas collaborates regularly with several co-authors, including Wanghua Chen, Jean-Luc Maurice, Pavel Bulkin, Ileana Florea, and Martin Foldyna. These collaborations are reflected in multiple joint publications across various research topics related to semiconductor and solar cell technologies.

Best Publications

  • A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition

    P. Roca i Cabarrocas;J. B. Chévrier;J. Huc;A. Lloret

  • Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements

    A. Fontcuberta i Morral;P. Roca i Cabarrocas;C. Clerc

  • Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films

    P Roca i Cabarrocas

  • Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour?solid?solid mechanism

    Jordi Arbiol;Billel Kalache;Pere Roca i Cabarrocas;Joan Ramon Morante

  • Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences

    P. Roca i Cabarrocas;N. Layadi;T. Heitz;B. Drévillon

  • Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment.

    N. Layadi;P. Roca i Cabarrocas;B. Drévillon;I. Solomon

  • High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

    Soumyadeep Misra;Linwei Yu;Linwei Yu;Martin Foldyna;Pere Roca i Cabarrocas

  • Growth and optoelectronic properties of polymorphous silicon thin films

    P. Roca i Cabarrocas;A. Fontcuberta i Morral;Y. Poissant

  • Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties

    B. Kalache;A. I. Kosarev;R. Vanderhaghen;P. Roca i Cabarrocas

  • Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts.

    Linwei Yu;Benedict O’Donnell;Pierre-Jean Alet;Pierre-Jean Alet;S Conesa-Boj

  • Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures

    M. Moreno;D. Daineka;P. Roca i Cabarrocas

  • Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth

    Wanghua Chen;Linwei Yu;Soumyadeep Misra;Zheng Fan

  • Experimental evidence for nanoparticle deposition in continuous argon–silane plasmas: Effects of silicon nanoparticles on film properties

    Pere Roca i Cabarrocas;Aomar Hadjadj

  • a-Si:H Deposition from SiH 4 and Si 2 H 6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α−γ Discharge Transition

    Jérôme Perrin;Pere Roca i Cabarrocas;Bruno Allain;Jean-Marie Friedt

  • Contribution of ions to the growth of amorphous, polymorphous, and microcrystalline silicon thin films

    E. A. G. Hamers;A. Fontcuberta i Morral;C. Niikura;R. Brenot

  • Midgap density of states in hydrogenated polymorphous silicon

    M. Meaudre;R. Meaudre;R. Butté;S. Vignoli

  • An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.

    Linwei Yu;Pierre-Jean Alet;Pierre-Jean Alet;Gennaro Picardi;Pere Roca i Cabarrocas

  • Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmas

    G. Viera;M. Mikikian;E. Bertran;P. Roca i Cabarrocas

  • Observation of incubation times in the nucleation of silicon nanowires obtained by the vapor-liquid-solid method

    Billel Kalache;Pere Roca i Cabarrocas;Anna Fontcuberta i Morral

  • In situ investigation of the growth of rf glow-discharge deposited amorphous germanium and silicon films

    A. M. Antoine;B. Drevillon;P. Roca i Cabarrocas

  • Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique

    P. Roca i Cabarrocas;R. Brenot;P. Bulkin;R. Vanderhaghen

  • Nanoparticle formation in low-pressure silane plasmas: bridging the gap between a-Si:H and μc-Si films

    P Roca i Cabarrocas;S Hamma;S.N Sharma;G Viera

Frequent Co-Authors

Sigurd Wagner
Sigurd Wagner Princeton University
John R. Abelson
John R. Abelson University of Illinois at Urbana-Champaign
Ramon Alcubilla
Ramon Alcubilla Universitat Politècnica de Catalunya
Rodrigo Martins
Rodrigo Martins Universidade Nova de Lisboa
Elvira Fortunato
Elvira Fortunato Universidade Nova de Lisboa
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Ki-Dong Lee
Ki-Dong Lee LG Corporation (South Korea)
Nicolas Triantafyllidis
Nicolas Triantafyllidis École Polytechnique
Jordi Arbiol
Jordi Arbiol Catalan Institute of Nanoscience and Nanotechnology
Isabel Ferreira
Isabel Ferreira University of Porto

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