World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
35
Citations
5854
World Ranking
8931
National Ranking
213

Ramon Alcubilla publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Ramon Alcubilla sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 276 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Ramon Alcubilla D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Ramon Alcubilla sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 35 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Ramon Alcubilla is affiliated with the Universitat Politècnica de Catalunya in Spain. Their research focuses primarily on the field of engineering, with a strong emphasis on electrical and electronic engineering. This includes work in renewable energy, sustainability, and polymers and plastics.

The main topics covered in Alcubilla's research include:

  • Silicon and solar cell technologies
  • Photovoltaic system optimization techniques
  • Thin-film transistor technologies
  • Perovskite materials and applications
  • Advanced battery technologies research
  • Conducting polymers and applications

Alcubilla has contributed to several recent papers in scientific journals, including:

  • "Low-Cost High-Sensitive Suns-Voc Measurement Instrument to Characterize c-Si Solar Cells," published in 2020 in IEEE Transactions on Instrumentation and Measurement
  • "Stabilization of the J-V Characteristic of a Perovskite Solar Cell Using an Intelligent Control Loop," published in 2021 in Electronics

Their frequent collaborators include A. Orpella, Pablo Ortega, Juan M. Pinol, Isidro Martín, and Ivan Masmitjà Rusiñol. These collaborations reflect a multidisciplinary approach spanning instrumentation, control systems, and materials science.

Alcubilla's publications are often found in venues such as IEEE Transactions on Instrumentation and Measurement and Electronics, indicating a focus on instrumentation, measurement technologies, and electronic engineering applications.

Best Publications

  • Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

    Hele Savin;Päivikki Repo;Guillaume von Gastrow;Pablo Ortega

  • Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells

    Luis G. Gerling;Somnath Mahato;Anna Morales-Vilches;Gerard Masmitja

  • Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiC x :H films

    I Martin;M Vetter;A Orpella;J Puigdollers

  • Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells

    Luis G. Gerling;Cristobal Voz;Ramón Alcubilla;Joaquim Puigdollers

  • Pentacene thin-film transistors with polymeric gate dielectric

    J. Puigdollers;C. Voz;A. Orpella;R. Quidant

  • Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

    Osbel Almora;Luis G. Gerling;Cristóbal Voz;Ramón Alcubilla

  • Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

    Luis G. Gerling;Somnath Mahato;Cristobal Voz;Ramon Alcubilla

  • V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells

    Gerard Masmitjà;Luís G. Gerling;Pablo Ortega;Joaquim Puigdollers

  • All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region

    M. Garín;R. Fenollosa;R. Alcubilla;L. Shi

  • First use of macroporous silicon loaded with catalyst film for a chemical reaction: a microreformer for producing hydrogen from ethanol steam reforming

    Jordi Llorca;Albert Casanovas;Trifon Trifonov;Angel Rodríguez

  • Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

    Ivan Mora-Seró;Yan Luo;Germà Garcia-Belmonte;Juan Bisquert

  • Analysis of the conductance transient in thick-film tin oxide gas sensors

    Xavier Vilanova;Eduard Llobet;Ramón Alcubilla;Jesús E. Sueiras

  • Copper phthalocyanine thin-film transistors with polymeric gate dielectric

    J. Puigdollers;C. Voz;M. Fonrodona;S. Cheylan

  • Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

    Guillaume von Gastrow;Ramon Alcubilla;Pablo Ortega;Marko Yli-Koski

  • Electrical characterization of n‐amorphous/p‐crystalline silicon heterojunctions

    L. F. Marsal;J. Pallarès;X. Correig;J. Calderer

  • Fabrication of silicon oxide microneedles from macroporous silicon

    Angel Rodríguez;David Molinero;Enrique Valera;Trifon Trifonov

  • Characterization of a-Si:H∕c-Si interfaces by effective-lifetime measurements

    M. Garín;U. Rau;W. Brendle;I. Martín

  • Colloidal Crystal Wires

    Michael Tymczenko;Lluis F. Marsal;Trifon Trifonov;Isabelle Rodriguez

  • Growth of plasmonic gold nanostructures by electron beam induced deposition

    S. Graells;R. Alcubilla;G. Badenes;R. Quidant

  • Laser‐fired contact optimization in c‐Si solar cells

    P. Ortega;A. Orpella;I. Martín;M. Colina

  • Pentacene thin-films obtained by thermal evaporation in high vacuum

    J. Puigdollers;C. Voz;A. Orpella;I. Martin

  • Effects of symmetry reduction in two-dimensional square and triangular lattices

    T. Trifonov;L. F. Marsal;A. Rodríguez;J. Pallarès

Frequent Co-Authors

Lluis F. Marsal
Lluis F. Marsal Rovira i Virgili University
Josep Pallarès
Josep Pallarès Rovira i Virgili University
Xavier Correig
Xavier Correig Rovira i Virgili University
P. Roca i Cabarrocas
P. Roca i Cabarrocas École Polytechnique
Concepció Rovira
Concepció Rovira Institut de Ciència de Materials de Barcelona
Henk J. Bolink
Henk J. Bolink University of Valencia
Romain Quidant
Romain Quidant ETH Zurich
Juan Bisquert
Juan Bisquert Universitat Politècnica de València
Germà Garcia-Belmonte
Germà Garcia-Belmonte Jaume I University
Magdalena Aguiló
Magdalena Aguiló Rovira i Virgili University

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