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Engineering and Technology

D-Index
35
Citations
5854
World Ranking
8929
National Ranking
213

Overview

Ramon Alcubilla is affiliated with the Universitat Politècnica de Catalunya in Spain. Their research focuses primarily on the field of engineering, with a strong emphasis on electrical and electronic engineering. This includes work in renewable energy, sustainability, and polymers and plastics.

The main topics covered in Alcubilla's research include:

  • Silicon and solar cell technologies
  • Photovoltaic system optimization techniques
  • Thin-film transistor technologies
  • Perovskite materials and applications
  • Advanced battery technologies research
  • Conducting polymers and applications

Alcubilla has contributed to several recent papers in scientific journals, including:

  • "Low-Cost High-Sensitive Suns-Voc Measurement Instrument to Characterize c-Si Solar Cells," published in 2020 in IEEE Transactions on Instrumentation and Measurement
  • "Stabilization of the J-V Characteristic of a Perovskite Solar Cell Using an Intelligent Control Loop," published in 2021 in Electronics

Their frequent collaborators include A. Orpella, Pablo Ortega, Juan M. Pinol, Isidro Martín, and Ivan Masmitjà Rusiñol. These collaborations reflect a multidisciplinary approach spanning instrumentation, control systems, and materials science.

Alcubilla's publications are often found in venues such as IEEE Transactions on Instrumentation and Measurement and Electronics, indicating a focus on instrumentation, measurement technologies, and electronic engineering applications.

Best Publications

  • Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency

    Hele Savin;Päivikki Repo;Guillaume von Gastrow;Pablo Ortega

  • Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells

    Luis G. Gerling;Somnath Mahato;Anna Morales-Vilches;Gerard Masmitja

  • Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiC x :H films

    I Martin;M Vetter;A Orpella;J Puigdollers

  • Origin of passivation in hole-selective transition metal oxides for crystalline silicon heterojunction solar cells

    Luis G. Gerling;Cristobal Voz;Ramón Alcubilla;Joaquim Puigdollers

  • Pentacene thin-film transistors with polymeric gate dielectric

    J. Puigdollers;C. Voz;A. Orpella;R. Quidant

  • Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells

    Osbel Almora;Luis G. Gerling;Cristóbal Voz;Ramón Alcubilla

  • Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

    Luis G. Gerling;Somnath Mahato;Cristobal Voz;Ramon Alcubilla

  • V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells

    Gerard Masmitjà;Luís G. Gerling;Pablo Ortega;Joaquim Puigdollers

  • All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region

    M. Garín;R. Fenollosa;R. Alcubilla;L. Shi

  • First use of macroporous silicon loaded with catalyst film for a chemical reaction: a microreformer for producing hydrogen from ethanol steam reforming

    Jordi Llorca;Albert Casanovas;Trifon Trifonov;Angel Rodríguez

  • Recombination rates in heterojunction silicon solar cells analyzed by impedance spectroscopy at forward bias and under illumination

    Ivan Mora-Seró;Yan Luo;Germà Garcia-Belmonte;Juan Bisquert

  • Analysis of the conductance transient in thick-film tin oxide gas sensors

    Xavier Vilanova;Eduard Llobet;Ramón Alcubilla;Jesús E. Sueiras

  • Copper phthalocyanine thin-film transistors with polymeric gate dielectric

    J. Puigdollers;C. Voz;M. Fonrodona;S. Cheylan

  • Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

    Guillaume von Gastrow;Ramon Alcubilla;Pablo Ortega;Marko Yli-Koski

  • Electrical characterization of n‐amorphous/p‐crystalline silicon heterojunctions

    L. F. Marsal;J. Pallarès;X. Correig;J. Calderer

  • Fabrication of silicon oxide microneedles from macroporous silicon

    Angel Rodríguez;David Molinero;Enrique Valera;Trifon Trifonov

  • Characterization of a-Si:H∕c-Si interfaces by effective-lifetime measurements

    M. Garín;U. Rau;W. Brendle;I. Martín

  • Colloidal Crystal Wires

    Michael Tymczenko;Lluis F. Marsal;Trifon Trifonov;Isabelle Rodriguez

  • Growth of plasmonic gold nanostructures by electron beam induced deposition

    S. Graells;R. Alcubilla;G. Badenes;R. Quidant

  • Laser‐fired contact optimization in c‐Si solar cells

    P. Ortega;A. Orpella;I. Martín;M. Colina

  • Pentacene thin-films obtained by thermal evaporation in high vacuum

    J. Puigdollers;C. Voz;A. Orpella;I. Martin

  • Effects of symmetry reduction in two-dimensional square and triangular lattices

    T. Trifonov;L. F. Marsal;A. Rodríguez;J. Pallarès

Frequent Co-Authors

Lluis F. Marsal
Lluis F. Marsal Rovira i Virgili University
Josep Pallarès
Josep Pallarès Rovira i Virgili University
Xavier Correig
Xavier Correig Rovira i Virgili University
P. Roca i Cabarrocas
P. Roca i Cabarrocas École Polytechnique
Concepció Rovira
Concepció Rovira Institut de Ciència de Materials de Barcelona
Henk J. Bolink
Henk J. Bolink University of Valencia
Romain Quidant
Romain Quidant ETH Zurich
Juan Bisquert
Juan Bisquert Universitat Politècnica de València
Germà Garcia-Belmonte
Germà Garcia-Belmonte Jaume I University
Magdalena Aguiló
Magdalena Aguiló Rovira i Virgili University

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