2026 Karsten Horn: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	65	5501	5319	327	315	310	24102

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

5501

5319

327

315

310

24102

Overview

Karsten Horn is affiliated with the Fritz Haber Institute of the Max Planck Society in Germany. Their research spans the fields of Physics and Astronomy, Engineering, and Materials Science, with more focused subfields including Atomic and Molecular Physics, and Optics, Aerospace Engineering, and Materials Chemistry.

Their work primarily investigates topics related to surface and thin film phenomena, aluminum alloy microstructure properties, and the microstructure and mechanical properties of materials.

Among recent scholarly contributions, Karsten Horn co-authored the paper titled "Electronic structure of β−Al₃Mg₂ and Al₁₃Fe₄ complex metallic alloys", published in 2022 in Physical Review B.

Frequent collaborators in their research include:

Vipin Kumar Singh
M. Krajčı́
Shuvam Sarkar
Mohammad Balal
Sajal Barman

Karsten Horn's work has appeared predominantly in the journal Physical Review B.

Best Publications

Controlling the Electronic Structure of Bilayer Graphene

Taisuke Ohta;Aaron Bostwick;Thomas Seyller;Karsten Horn

4153
Citations
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Konstantin V. Emtsev;Aaron Bostwick;Karsten Horn;Johannes Jobst

3417
Citations
Quasiparticle dynamics in graphene

Aaron Bostwick;Taisuke Ohta;Thomas Seyller;Karsten Horn

1512
Citations
Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy

Taisuke Ohta;Aaron Bostwick;Jessica L. McChesney;Jessica L. McChesney;Thomas Seyller

936
Citations
Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

E. Moreau;I. Robert;J. M. Gérard;I. Abram

714
Citations
Friction and Dissipation in Epitaxial Graphene Films

T. Filleter;Jessica L. McChesney;Aaron Bostwick;Eli Rotenberg

670
Citations
Observation of Plasmarons in Quasi-Freestanding Doped Graphene

Aaron Bostwick;Florian Speck;Thomas Seyller;Karsten Horn

517
Citations
Extended van Hove Singularity and Superconducting Instability in Doped Graphene

J. L. McChesney;J. L. McChesney;Aaron Bostwick;Taisuke Ohta;Taisuke Ohta;Thomas Seyller

405
Citations
Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

Victor W. Brar;Yuanbo Zhang;Yossi Yayon;Taisuke Ohta

342
Citations
Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluation.

Maria Alonso;Roberto Cimino;Karsten Horn

310
Citations
Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC

Victor W. Brar;Yuanbo Zhang;Yossi Yayon;Aaron Bostwick

288
Citations
Epitaxial graphene : a new material

T. Seyller;A. Bostwick;K. V. Emtsev;Karsten. Horn

270
Citations
Quasiparticle transformation during a metal-insulator transition in graphene.

Aaron Bostwick;Jessica L. McChesney;Konstantin V. Emtsev;Thomas Seyller

249
Citations
Symmetry Breaking in Few Layer Graphene Films

A. Bostwick;T. Ohta;J.L. McChesney;K. Emtsev

248
Citations
Morphology of graphene thin film growth on SiC(0001)

Taisuke Ohta;Farid El Gabaly;Aaron Bostwick;Jessica L. McChesney

235
Citations
Induced magnetism of carbon atoms at the graphene/Ni(111) interface

Martin Weser;Y. Rehder;Karsten Horn;Muriel Sicot

230
Citations
The formation of an energy gap in graphene on ruthenium by controlling the interface

Carsten Enderlein;Y. S. Kim;Aaron Bostwick;Eli Rotenberg

224
Citations
Origin of the energy bandgap in epitaxial graphene.

Eli Rotenberg;Aaron Bostwick;Taisuke Ohta;Jessica L. McChesney

215
Citations
Electronic structure of graphene on single-crystal copper substrates

Andrew L. Walter;Andrew L. Walter;Shu Nie;Aaron Bostwick;Keun Su Kim;Keun Su Kim

204
Citations
Induced magnetism of carbon atoms at the graphene/Ni(111) interface

M. Weser;Y. Rehder;Yu. S. Dedkov;K. Horn

199
Citations