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Materials Science

D-Index
71
Citations
30426
World Ranking
4162
National Ranking
234

Overview

Thomas Seyller is affiliated with Chemnitz University of Technology in Germany and conducts research primarily in the fields of Materials Science and Engineering. Their work spans a variety of subfields, including Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Mechanical Engineering, and Biomedical Engineering.

The scientist's publications frequently appear in several prominent venues. These include arXiv (Cornell University), Advanced Materials Interfaces, Physical Review B, Coatings, and 2D Materials. Seyller's research contributions cover a broad array of topics, with a particular focus on graphene and related materials.

Main research topics covered by Thomas Seyller comprise:

  • Graphene research and applications
  • Surface and Thin Film Phenomena
  • 2D Materials and Applications
  • Electron and X-Ray Spectroscopy Techniques
  • Quantum and electron transport phenomena
  • High Entropy Alloys Studies
  • High-Temperature Coating Behaviors

Recent publications authored or coauthored by Thomas Seyller include:

  • "Challenging the Durability of Intermetallic Mo-Ni Compounds in the Hydrogen Evolution Reaction," 2021, ACS Applied Materials & Interfaces
  • "Substrate induced nanoscale resistance variation in epitaxial graphene," 2020, Nature Communications
  • "Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge-Neutral Epitaxial Graphene," 2023, Advanced Materials Interfaces
  • "Surface Transport Properties of Pb-Intercalated Graphene," 2021, Materials
  • "Ultrafast electronic linewidth broadening in the C 1s core level of graphene," 2021, Physical Review B

Thomas Seyller has collaborated extensively with several coauthors over their career. Frequent collaborators include Philip Schädlich, Fabian Göhler, Susanne Wolff, Florian Speck, and Péter Richter.

Best Publications

  • Controlling the Electronic Structure of Bilayer Graphene

    Taisuke Ohta;Aaron Bostwick;Thomas Seyller;Karsten Horn

  • Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

    Konstantin V. Emtsev;Aaron Bostwick;Karsten Horn;Johannes Jobst

  • Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

    Andrea C. Ferrari;Francesco Bonaccorso;Francesco Bonaccorso;Vladimir Fal'ko;Konstantin S. Novoselov

  • Quasiparticle dynamics in graphene

    Aaron Bostwick;Taisuke Ohta;Thomas Seyller;Karsten Horn

  • Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

    K. V. Emtsev;F. Speck;T. Seyller;L. Ley

  • Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy

    Taisuke Ohta;Aaron Bostwick;Jessica L. McChesney;Jessica L. McChesney;Thomas Seyller

  • Giant Faraday rotation in single- and multilayer graphene

    Iris Crassee;Julien Levallois;Andrew L. Walter;Andrew L. Walter;Markus Ostler

  • Friction and Dissipation in Epitaxial Graphene Films

    T. Filleter;Jessica L. McChesney;Aaron Bostwick;Eli Rotenberg

  • Observation of Plasmarons in Quasi-Freestanding Doped Graphene

    Aaron Bostwick;Florian Speck;Thomas Seyller;Karsten Horn

  • Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy

    P. Lauffer;K. V. Emtsev;R. Graupner;Th. Seyller

  • Production and processing of graphene and related materials

    Claudia Backes;Claudia Backes;Amr M Abdelkader;Concepción Alonso;Amandine Andrieux-Ledier

  • Direct View of Hot Carrier Dynamics in Graphene

    Jens Christian Johannsen;Søren Ulstrup;Federico Cilento;Alberto Crepaldi

  • Extended van Hove Singularity and Superconducting Instability in Doped Graphene

    J. L. McChesney;J. L. McChesney;Aaron Bostwick;Taisuke Ohta;Taisuke Ohta;Thomas Seyller

  • Raman spectra of epitaxial graphene on SiC(0001)

    J. Röhrl;M. Hundhausen;K. V. Emtsev;Th. Seyller

  • Reconstruction of molecular orbital densities from photoemission data.

    Peter Puschnig;Stephen Berkebile;Alexander J. Fleming;Georg Koller

  • Local work function measurements of epitaxial graphene

    T. Filleter;K. V. Emtsev;Th. Seyller;R. Bennewitz

  • Doping of single-walled carbon nanotube bundles by Brønsted acids

    Ralf Graupner;Jürgen Abraham;Andrea Vencelová;Thomas Seyller

  • Epitaxial Graphenes on Silicon Carbide

    Phillip N. First;Walt A. de Heer;Thomas Seyller;Claire Berger

  • Epitaxial graphene : a new material

    T. Seyller;A. Bostwick;K. V. Emtsev;Karsten. Horn

  • Origin of doping in quasi-free-standing graphene on silicon carbide.

    Unknown

  • Quantum oscillations and quantum Hall effect in epitaxial graphene

    Johannes Jobst;Daniel Waldmann;Florian Speck;Roland Hirner

Frequent Co-Authors

Karsten Horn
Karsten Horn Fritz Haber Institute of the Max Planck Society
Aaron Bostwick
Aaron Bostwick Lawrence Berkeley National Laboratory
Eli Rotenberg
Eli Rotenberg Lawrence Berkeley National Laboratory
Lothar Ley
Lothar Ley University of Erlangen-Nuremberg
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Claire Berger
Claire Berger Georgia Institute of Technology
Nicola Pugno
Nicola Pugno University of Trento
Andreas K. Schmid
Andreas K. Schmid Lawrence Berkeley National Laboratory
Dietrich R. T. Zahn
Dietrich R. T. Zahn Chemnitz University of Technology
Andreas Hirsch
Andreas Hirsch University of Erlangen-Nuremberg

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