Nathan Newman

Overview

Best Publications

• The advanced unified defect model for Schottky barrier formation

  W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  496
  Citations

• Bi‐epitaxial grain boundary junctions in YBa2Cu3O7

  K. Char;M. S. Colclough;S. M. Garrison;N. Newman

  409
  Citations

• High-field superconductivity in alloyed MgB 2 thin films

  V. Braccini;A. Gurevich;J. E. Giencke;M. C. Jewell

  325
  Citations

• Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

  H. X. Liu;Stephen Y. Wu;Rakesh Singh;Lin Gu

  298
  Citations

• Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN.

  X. Y. Cui;J. E. Medvedeva;B. Delley;A. J. Freeman

  293
  Citations

• 1.54‐μm photoluminescence from Er‐implanted GaN and AlN

  R. G. Wilson;R. N. Schwartz;C. R. Abernathy;S. J. Pearton

  279
  Citations

• Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

  H. X. Liu;Stephen Y. Wu;R. K. Singh;Lin Gu

  245
  Citations

• High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineering

  Nathan Newman;W. G. Lyons

  244
  Citations

• p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

  M. Rubin;N. Newman;J. S. Chan;T. C. Fu

  223
  Citations

• Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films

  Stephen Y. Wu;H. X. Liu;Lin Gu;R. K. Singh

  206
  Citations

• Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs.

  J. F. Zheng;J. F. Zheng;X. Liu;X. Liu;N. Newman;N. Newman;E. R. Weber;E. R. Weber

  188
  Citations

• Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces.

  N. Newman;M. van Schilfgaarde;T. Kendelwicz;M. D. Williams

  187
  Citations

• Spin lifetimes of electrons injected into GaAs and GaN

  Srinivasan Krishnamurthy;Mark van Schilfgaarde;Nathan Newman

  156
  Citations

• On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

  N. Newman;W. E. Spicer;T. Kendelewicz;I. Lindau

  142
  Citations

• Large‐area YBa2Cu3O7−δ thin films on sapphire for microwave applications

  B. F. Cole;G.‐C. Liang;N. Newman;K. Char

  141
  Citations

• Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphire

  K. Char;N. Newman;S. M. Garrison;R. W. Barton

  131
  Citations

• Spin lifetimes of electrons injected into GaAs and GaN

  S. Krishnamurthy;N. Newman;M. van Schilfgaarde

  128
  Citations

• Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films

  N. Newman;J. Ross;M. Rubin

  126
  Citations

• YBa2Cu3O7-δ superconducting films with low microwave surface resistance over large areas

  N. Newman;K. Char;S. M. Garrison;R. W. Barton

  122
  Citations

• Observation of two in‐plane epitaxial states in YBa2Cu3O7−δ films on yttria‐stabilized ZrO2

  S. M. Garrison;N. Newman;B. F. Cole;K. Char

  119
  Citations