World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
51
Citations
9469
World Ranking
9897
National Ranking
2385

Nathan Newman publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Nathan Newman sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 266 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Nathan Newman D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Nathan Newman sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Nathan Newman is affiliated with Arizona State University in the United States. Their research primarily spans the fields of Engineering and Materials Science, with a specific focus on Electrical and Electronic Engineering, Materials Chemistry, and subfields such as Electronic, Optical and Magnetic Materials, Polymers and Plastics, and Biomedical Engineering.

Their work addresses a range of advanced topics, including Microwave Dielectric Ceramics Synthesis, Ferroelectric and Piezoelectric Materials, Advanced Battery Materials and Technologies, Perovskite Materials and Applications, Supercapacitor Materials and Fabrication, and Advanced Memory and Neural Computing.

Newman has published in several academic venues, with frequent contributions in Applied Physics Letters, arXiv (Cornell University), Materials Today Energy, Materials Today Physics, and Cellulose.

Some of their recent papers include:

  • Functionalized bacterial cellulose as a separator to address polysulfides shuttling in lithium-sulfur batteries, 2021, Materials Today Energy
  • Halide perovskite based synaptic devices for neuromorphic systems, 2022, Materials Today Physics
  • Oxidized bacterial cellulose functionalized with SiO2 nanoparticles as a separator for lithium-metal and lithium-sulfur batteries, 2022, Cellulose
  • Low-temperature synthesis of 2D anisotropic MoTe2 using a high-pressure soft sputtering technique, 2020, Nanoscale Advances
  • Effect of heat treatment on the properties of non-stoichiometric Ba3CoNb2O9 ceramics: Evaluation of crystal structure, order-disorder behavior, and dielectric characteristics, 2022, Journal of the European Ceramic Society

The scientist frequently collaborates with other researchers. Their notable co-authors include:

  • Justin Gonzales
  • Zhaoyang Fan
  • Cameron Kopas
  • Wenyue Li
  • Shu Wang

Best Publications

  • The advanced unified defect model for Schottky barrier formation

    W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  • Bi‐epitaxial grain boundary junctions in YBa2Cu3O7

    K. Char;M. S. Colclough;S. M. Garrison;N. Newman

  • High-field superconductivity in alloyed MgB 2 thin films

    V. Braccini;A. Gurevich;J. E. Giencke;M. C. Jewell

  • Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

    H. X. Liu;Stephen Y. Wu;Rakesh Singh;Lin Gu

  • Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN.

    X. Y. Cui;J. E. Medvedeva;B. Delley;A. J. Freeman

  • 1.54‐μm photoluminescence from Er‐implanted GaN and AlN

    R. G. Wilson;R. N. Schwartz;C. R. Abernathy;S. J. Pearton

  • Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN

    H. X. Liu;Stephen Y. Wu;R. K. Singh;Lin Gu

  • High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineering

    Nathan Newman;W. G. Lyons

  • p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

    M. Rubin;N. Newman;J. S. Chan;T. C. Fu

  • Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films

    Stephen Y. Wu;H. X. Liu;Lin Gu;R. K. Singh

  • Scanning tunneling microscopy studies of Si donors (SiGa) in GaAs.

    J. F. Zheng;J. F. Zheng;X. Liu;X. Liu;N. Newman;N. Newman;E. R. Weber;E. R. Weber

  • Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces.

    N. Newman;M. van Schilfgaarde;T. Kendelwicz;M. D. Williams

  • Spin lifetimes of electrons injected into GaAs and GaN

    Srinivasan Krishnamurthy;Mark van Schilfgaarde;Nathan Newman

  • On the Fermi level pinning behavior of metal/III–V semiconductor interfaces

    N. Newman;W. E. Spicer;T. Kendelewicz;I. Lindau

  • Large‐area YBa2Cu3O7−δ thin films on sapphire for microwave applications

    B. F. Cole;G.‐C. Liang;N. Newman;K. Char

  • Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphire

    K. Char;N. Newman;S. M. Garrison;R. W. Barton

  • Spin lifetimes of electrons injected into GaAs and GaN

    S. Krishnamurthy;N. Newman;M. van Schilfgaarde

  • Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films

    N. Newman;J. Ross;M. Rubin

  • YBa2Cu3O7-δ superconducting films with low microwave surface resistance over large areas

    N. Newman;K. Char;S. M. Garrison;R. W. Barton

  • Observation of two in‐plane epitaxial states in YBa2Cu3O7−δ films on yttria‐stabilized ZrO2

    S. M. Garrison;N. Newman;B. F. Cole;K. Char

Frequent Co-Authors

W. E. Spicer
W. E. Spicer Stanford University
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Kookrin Char
Kookrin Char Seoul National University
I. Lindau
I. Lindau Stanford University
Lin Gu
Lin Gu Chinese Academy of Sciences
Zhaoyang Fan
Zhaoyang Fan Texas Tech University
David C. Larbalestier
David C. Larbalestier Florida State University
T. H. Geballe
T. H. Geballe Stanford University
Chang-Beom Eom
Chang-Beom Eom University of Wisconsin–Madison

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