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Jingyu Lin

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 91 1636 1571 508 474 503 26833

Jingyu Lin publications per year

The chart shows the history of publications by Jingyu Lin between 1985 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jingyu Lin published across 37 years, from 1985 to 2021, averaging 13.5 papers a year. Output peaked at 36 publications in 2003. 22 of the 500 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1985 to 2021. Vertical axis: number of publications, 0 to 36. Peak 36 publications in 2003. 1985: 1 publication 1986: 2 publications 1987: 3 publications 1988: 1 publication 1989: 3 publications 1990: 8 publications 1991: 2 publications 1992: 3 publications 1993: 2 publications 1994: 3 publications 1995: 11 publications 1996: 12 publications 1997: 16 publications 1998: 11 publications 1999: 19 publications 2000: 19 publications 2001: 27 publications 2002: 16 publications 2003: 36 publications 2004: 31 publications 2005: 20 publications 2006: 29 publications 2007: 21 publications 2008: 23 publications 2009: 16 publications 2010: 13 publications 2011: 21 publications 2012: 18 publications 2013: 12 publications 2014: 15 publications 2015: 14 publications 2016: 18 publications 2017: 15 publications 2018: 8 publications 2019: 9 publications 2020: 17 publications 2021: 5 publications
1985 2021

500 publications in total across all disciplines

View publications per year as a table
Jingyu Lin: publications per year, 1985 to 2021
Year Publications
1985 1
1986 2
1987 3
1988 1
1989 3
1990 8
1991 2
1992 3
1993 2
1994 3
1995 11
1996 12
1997 16
1998 11
1999 19
2000 19
2001 27
2002 16
2003 36
2004 31
2005 20
2006 29
2007 21
2008 23
2009 16
2010 13
2011 21
2012 18
2013 12
2014 15
2015 14
2016 18
2017 15
2018 8
2019 9
2020 17
2021 5
Total 500
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Jingyu Lin publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jingyu Lin sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 490–509 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 503 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174 503
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Jingyu Lin D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jingyu Lin sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 90–91 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 91 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175 91
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Optoelectronics, Wide-bandgap semiconductor, Photoluminescence, Chemical vapor deposition and Light-emitting diode are his primary areas of study. His biological study spans a wide range of topics, including Nitride, High voltage and Optics. His study in Wide-bandgap semiconductor is interdisciplinary in nature, drawing from both Sapphire, Vacancy defect, Electron mobility and Wurtzite crystal structure.

Jingyu Lin interconnects Spectroscopy, Exciton, Band gap and Emission spectrum in the investigation of issues within Photoluminescence. His Chemical vapor deposition research includes elements of Metalorganic vapour phase epitaxy, Epitaxy, Doping, Conductivity and Dislocation. His work carried out in the field of Light-emitting diode brings together such families of science as AC power, Voltage, Diode, Electroluminescence and Integrated circuit.

His most cited work include:

  • Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots. (1075 citations)
  • III-nitride blue and ultraviolet photonic crystal light emitting diodes (303 citations)
  • InGaN/GaN multiple quantum well solar cells with long operating wavelengths (283 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Photoluminescence, Wide-bandgap semiconductor, Doping and Chemical vapor deposition. His research in Optoelectronics tackles topics such as Nitride which are related to areas like Ultraviolet. His Photoluminescence research is multidisciplinary, incorporating elements of Spectroscopy, Exciton, Molecular physics and Emission spectrum.

His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Electron mobility, Heterojunction, Band gap and Optics. His studies deal with areas such as Acceptor, Silicon, Epitaxy, Impurity and Electrical resistivity and conductivity as well as Doping. His Chemical vapor deposition research includes themes of Metalorganic vapour phase epitaxy, Metal and Quantum efficiency.

He most often published in these fields:

  • Optoelectronics (64.01%)
  • Photoluminescence (42.24%)
  • Wide-bandgap semiconductor (29.09%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (64.01%)
  • Photoluminescence (42.24%)
  • Chemical vapor deposition (24.35%)

In recent papers he was focusing on the following fields of study:

Jingyu Lin mostly deals with Optoelectronics, Photoluminescence, Chemical vapor deposition, Doping and Neutron detection. His Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy and Epitaxy. The various areas that he examines in his Photoluminescence study include Impurity, Erbium, Molecular physics, Excited state and Emission spectrum.

His Impurity course of study focuses on Vacancy defect and Analytical chemistry. Jingyu Lin has researched Chemical vapor deposition in several fields, including Boron, X-ray crystallography, Excitation, Band gap and Quantum efficiency. His research integrates issues of Infrared and Optical amplifier in his study of Doping.

Between 2015 and 2021, his most popular works were:

  • Realization of highly efficient hexagonal boron nitride neutron detectors (43 citations)
  • Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications (37 citations)
  • The origins of near band-edge transitions in hexagonal boron nitride epilayers (31 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His main research concerns Wide-bandgap semiconductor, Photoluminescence, Optoelectronics, Neutron detection and Analytical chemistry. His Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Sapphire, Metalorganic vapour phase epitaxy, Charge carrier and Atomic physics. Jingyu Lin combines subjects such as Molecular physics, Impurity, Schottky barrier and Emission spectrum with his study of Photoluminescence.

His Optoelectronics study frequently intersects with other fields, such as Epitaxy. His studies examine the connections between Neutron detection and genetics, as well as such issues in Electron mobility, with regards to Electron, Dark current and Photoconductivity. Jingyu Lin has included themes like Schottky diode, Diode, Breakdown voltage, Annealing and Electrical resistivity and conductivity in his Analytical chemistry study.

Best Publications

  • Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots

    Libin Tang;Rongbin Ji;Xiangke Cao;Jingyu Lin

  • Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots.

    Libin Tang;Rongbin Ji;Xueming Li;Gongxun Bai

  • Band structure and fundamental optical transitions in wurtzite AlN

    J. Li;K. B. Nam;M. L. Nakarmi;J. Y. Lin

  • III-nitride blue and ultraviolet photonic crystal light emitting diodes

    T. N. Oder;K. H. Kim;J. Y. Lin;H. X. Jiang

  • InGaN/GaN multiple quantum well solar cells with long operating wavelengths

    R. Dahal;B. Pantha;J. Li;J. Y. Lin

  • Unique optical properties of AlGaN alloys and related ultraviolet emitters

    K. B. Nam;J. Li;M. L. Nakarmi;J. Y. Lin

  • III-nitride blue microdisplays

    H. X. Jiang;S. X. Jin;J. Li;J. Shakya

  • III-Nitride full-scale high-resolution microdisplays

    Jacob Day;J. Li;D. Y. C. Lie;Charles Bradford

  • Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

    K. B. Nam;M. L. Nakarmi;J. Li;J. Y. Lin

  • Structural phase behavior in II–VI semiconductor nanoparticles

    R. J. Bandaranayake;G. W. Wen;J. Y. Lin;H. X. Jiang

  • Fundamental optical transitions in GaN

    G. D. Chen;M. Smith;J. Y. Lin;H. X. Jiang

  • Heterogeneous integrated high voltage DC/AC light emitter

    Zhaoyang Fan;Hongxing Jiang;Jingyu Lin

  • Light emitting diodes for high AC voltage operation and general lighting

    Hongxing Jiang;Jingyu Lin;Sixuan Jin

  • GaN microdisk light emitting diodes

    S. X. Jin;J. Li;J. Z. Li;J. Y. Lin

  • 200 nm deep ultraviolet photodetectors based on AlN

    J. Li;Z. Y. Fan;R. Dahal;M. L Nakarmi

  • Nitride micro-LEDs and beyond--a decade progress review.

    H. X. Jiang;J. Y. Lin

  • InGaN/GaN multiple quantum well concentrator solar cells

    R. Dahal;J. Li;K. Aryal;J. Y. Lin

  • III-nitride photonic crystals

    T. N. Oder;J. Shakya;J. Y. Lin;H. X. Jiang

  • Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

    R. Dahal;J. Li;S. Majety;B. N. Pantha

  • Nitride deep-ultraviolet light-emitting diodes with microlens array

    M. Khizar;Z. Y. Fan;K. H. Kim;J. Y. Lin

Frequent Co-Authors

Hongxing Jiang
Hongxing Jiang Texas Tech University
Jing Li
Jing Li Texas Tech University
Zhaoyang Fan
Zhaoyang Fan Texas Tech University
James H. Edgar
James H. Edgar Kansas State University
Rongqing Hui
Rongqing Hui University of Kansas
Chih-Chung Yang
Chih-Chung Yang National Taiwan University
Shu Ping Lau
Shu Ping Lau Hong Kong Polytechnic University
Christopher M. Sorensen
Christopher M. Sorensen Kansas State University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories

External Links

Wikipedia of Jingyu Lin Personal website of Jingyu Lin Google Scholar page

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Publications: 36

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Junxi Wang

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