World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
91
Citations
26833
World Ranking
1637
National Ranking
509

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

Optoelectronics, Wide-bandgap semiconductor, Photoluminescence, Chemical vapor deposition and Light-emitting diode are his primary areas of study. His biological study spans a wide range of topics, including Nitride, High voltage and Optics. His study in Wide-bandgap semiconductor is interdisciplinary in nature, drawing from both Sapphire, Vacancy defect, Electron mobility and Wurtzite crystal structure.

Jingyu Lin interconnects Spectroscopy, Exciton, Band gap and Emission spectrum in the investigation of issues within Photoluminescence. His Chemical vapor deposition research includes elements of Metalorganic vapour phase epitaxy, Epitaxy, Doping, Conductivity and Dislocation. His work carried out in the field of Light-emitting diode brings together such families of science as AC power, Voltage, Diode, Electroluminescence and Integrated circuit.

His most cited work include:

  • Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots. (1075 citations)
  • III-nitride blue and ultraviolet photonic crystal light emitting diodes (303 citations)
  • InGaN/GaN multiple quantum well solar cells with long operating wavelengths (283 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Photoluminescence, Wide-bandgap semiconductor, Doping and Chemical vapor deposition. His research in Optoelectronics tackles topics such as Nitride which are related to areas like Ultraviolet. His Photoluminescence research is multidisciplinary, incorporating elements of Spectroscopy, Exciton, Molecular physics and Emission spectrum.

His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Electron mobility, Heterojunction, Band gap and Optics. His studies deal with areas such as Acceptor, Silicon, Epitaxy, Impurity and Electrical resistivity and conductivity as well as Doping. His Chemical vapor deposition research includes themes of Metalorganic vapour phase epitaxy, Metal and Quantum efficiency.

He most often published in these fields:

  • Optoelectronics (64.01%)
  • Photoluminescence (42.24%)
  • Wide-bandgap semiconductor (29.09%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (64.01%)
  • Photoluminescence (42.24%)
  • Chemical vapor deposition (24.35%)

In recent papers he was focusing on the following fields of study:

Jingyu Lin mostly deals with Optoelectronics, Photoluminescence, Chemical vapor deposition, Doping and Neutron detection. His Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy and Epitaxy. The various areas that he examines in his Photoluminescence study include Impurity, Erbium, Molecular physics, Excited state and Emission spectrum.

His Impurity course of study focuses on Vacancy defect and Analytical chemistry. Jingyu Lin has researched Chemical vapor deposition in several fields, including Boron, X-ray crystallography, Excitation, Band gap and Quantum efficiency. His research integrates issues of Infrared and Optical amplifier in his study of Doping.

Between 2015 and 2021, his most popular works were:

  • Realization of highly efficient hexagonal boron nitride neutron detectors (43 citations)
  • Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications (37 citations)
  • The origins of near band-edge transitions in hexagonal boron nitride epilayers (31 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His main research concerns Wide-bandgap semiconductor, Photoluminescence, Optoelectronics, Neutron detection and Analytical chemistry. His Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Sapphire, Metalorganic vapour phase epitaxy, Charge carrier and Atomic physics. Jingyu Lin combines subjects such as Molecular physics, Impurity, Schottky barrier and Emission spectrum with his study of Photoluminescence.

His Optoelectronics study frequently intersects with other fields, such as Epitaxy. His studies examine the connections between Neutron detection and genetics, as well as such issues in Electron mobility, with regards to Electron, Dark current and Photoconductivity. Jingyu Lin has included themes like Schottky diode, Diode, Breakdown voltage, Annealing and Electrical resistivity and conductivity in his Analytical chemistry study.

Best Publications

  • Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots

    Libin Tang;Rongbin Ji;Xiangke Cao;Jingyu Lin

  • Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots.

    Libin Tang;Rongbin Ji;Xueming Li;Gongxun Bai

  • Band structure and fundamental optical transitions in wurtzite AlN

    J. Li;K. B. Nam;M. L. Nakarmi;J. Y. Lin

  • III-nitride blue and ultraviolet photonic crystal light emitting diodes

    T. N. Oder;K. H. Kim;J. Y. Lin;H. X. Jiang

  • InGaN/GaN multiple quantum well solar cells with long operating wavelengths

    R. Dahal;B. Pantha;J. Li;J. Y. Lin

  • Unique optical properties of AlGaN alloys and related ultraviolet emitters

    K. B. Nam;J. Li;M. L. Nakarmi;J. Y. Lin

  • III-nitride blue microdisplays

    H. X. Jiang;S. X. Jin;J. Li;J. Shakya

  • III-Nitride full-scale high-resolution microdisplays

    Jacob Day;J. Li;D. Y. C. Lie;Charles Bradford

  • Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

    K. B. Nam;M. L. Nakarmi;J. Li;J. Y. Lin

  • Structural phase behavior in II–VI semiconductor nanoparticles

    R. J. Bandaranayake;G. W. Wen;J. Y. Lin;H. X. Jiang

  • Fundamental optical transitions in GaN

    G. D. Chen;M. Smith;J. Y. Lin;H. X. Jiang

  • Heterogeneous integrated high voltage DC/AC light emitter

    Zhaoyang Fan;Hongxing Jiang;Jingyu Lin

  • Light emitting diodes for high AC voltage operation and general lighting

    Hongxing Jiang;Jingyu Lin;Sixuan Jin

  • GaN microdisk light emitting diodes

    S. X. Jin;J. Li;J. Z. Li;J. Y. Lin

  • 200 nm deep ultraviolet photodetectors based on AlN

    J. Li;Z. Y. Fan;R. Dahal;M. L Nakarmi

  • Nitride micro-LEDs and beyond--a decade progress review.

    H. X. Jiang;J. Y. Lin

  • InGaN/GaN multiple quantum well concentrator solar cells

    R. Dahal;J. Li;K. Aryal;J. Y. Lin

  • III-nitride photonic crystals

    T. N. Oder;J. Shakya;J. Y. Lin;H. X. Jiang

  • Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

    R. Dahal;J. Li;S. Majety;B. N. Pantha

  • Nitride deep-ultraviolet light-emitting diodes with microlens array

    M. Khizar;Z. Y. Fan;K. H. Kim;J. Y. Lin

Frequent Co-Authors

Hongxing Jiang
Hongxing Jiang Texas Tech University
Jing Li
Jing Li Texas Tech University
Zhaoyang Fan
Zhaoyang Fan Texas Tech University
James H. Edgar
James H. Edgar Kansas State University
Rongqing Hui
Rongqing Hui University of Kansas
Chih-Chung Yang
Chih-Chung Yang National Taiwan University
Shu Ping Lau
Shu Ping Lau Hong Kong Polytechnic University
Christopher M. Sorensen
Christopher M. Sorensen Kansas State University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories

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