Optoelectronics, Wide-bandgap semiconductor, Photoluminescence, Chemical vapor deposition and Light-emitting diode are his primary areas of study. His biological study spans a wide range of topics, including Nitride, High voltage and Optics. His study in Wide-bandgap semiconductor is interdisciplinary in nature, drawing from both Sapphire, Vacancy defect, Electron mobility and Wurtzite crystal structure.
Jingyu Lin interconnects Spectroscopy, Exciton, Band gap and Emission spectrum in the investigation of issues within Photoluminescence. His Chemical vapor deposition research includes elements of Metalorganic vapour phase epitaxy, Epitaxy, Doping, Conductivity and Dislocation. His work carried out in the field of Light-emitting diode brings together such families of science as AC power, Voltage, Diode, Electroluminescence and Integrated circuit.
His primary areas of investigation include Optoelectronics, Photoluminescence, Wide-bandgap semiconductor, Doping and Chemical vapor deposition. His research in Optoelectronics tackles topics such as Nitride which are related to areas like Ultraviolet. His Photoluminescence research is multidisciplinary, incorporating elements of Spectroscopy, Exciton, Molecular physics and Emission spectrum.
His Wide-bandgap semiconductor research is multidisciplinary, incorporating perspectives in Electron mobility, Heterojunction, Band gap and Optics. His studies deal with areas such as Acceptor, Silicon, Epitaxy, Impurity and Electrical resistivity and conductivity as well as Doping. His Chemical vapor deposition research includes themes of Metalorganic vapour phase epitaxy, Metal and Quantum efficiency.
Jingyu Lin mostly deals with Optoelectronics, Photoluminescence, Chemical vapor deposition, Doping and Neutron detection. His Optoelectronics study combines topics in areas such as Metalorganic vapour phase epitaxy and Epitaxy. The various areas that he examines in his Photoluminescence study include Impurity, Erbium, Molecular physics, Excited state and Emission spectrum.
His Impurity course of study focuses on Vacancy defect and Analytical chemistry. Jingyu Lin has researched Chemical vapor deposition in several fields, including Boron, X-ray crystallography, Excitation, Band gap and Quantum efficiency. His research integrates issues of Infrared and Optical amplifier in his study of Doping.
His main research concerns Wide-bandgap semiconductor, Photoluminescence, Optoelectronics, Neutron detection and Analytical chemistry. His Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Sapphire, Metalorganic vapour phase epitaxy, Charge carrier and Atomic physics. Jingyu Lin combines subjects such as Molecular physics, Impurity, Schottky barrier and Emission spectrum with his study of Photoluminescence.
His Optoelectronics study frequently intersects with other fields, such as Epitaxy. His studies examine the connections between Neutron detection and genetics, as well as such issues in Electron mobility, with regards to Electron, Dark current and Photoconductivity. Jingyu Lin has included themes like Schottky diode, Diode, Breakdown voltage, Annealing and Electrical resistivity and conductivity in his Analytical chemistry study.
Libin Tang;Rongbin Ji;Xiangke Cao;Jingyu Lin
Libin Tang;Rongbin Ji;Xueming Li;Gongxun Bai
J. Li;K. B. Nam;M. L. Nakarmi;J. Y. Lin
T. N. Oder;K. H. Kim;J. Y. Lin;H. X. Jiang
R. Dahal;B. Pantha;J. Li;J. Y. Lin
K. B. Nam;J. Li;M. L. Nakarmi;J. Y. Lin
H. X. Jiang;S. X. Jin;J. Li;J. Shakya
Jacob Day;J. Li;D. Y. C. Lie;Charles Bradford
K. B. Nam;M. L. Nakarmi;J. Li;J. Y. Lin
R. J. Bandaranayake;G. W. Wen;J. Y. Lin;H. X. Jiang
G. D. Chen;M. Smith;J. Y. Lin;H. X. Jiang
Zhaoyang Fan;Hongxing Jiang;Jingyu Lin
Hongxing Jiang;Jingyu Lin;Sixuan Jin
S. X. Jin;J. Li;J. Z. Li;J. Y. Lin
J. Li;Z. Y. Fan;R. Dahal;M. L Nakarmi
H. X. Jiang;J. Y. Lin
R. Dahal;J. Li;K. Aryal;J. Y. Lin
T. N. Oder;J. Shakya;J. Y. Lin;H. X. Jiang
R. Dahal;J. Li;S. Majety;B. N. Pantha
M. Khizar;Z. Y. Fan;K. H. Kim;J. Y. Lin
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