World's Best Scientists 2026 revealed!

Overview

J. P. Harbison is affiliated with Telcordia Technologies in the United States. Their research profile currently does not list recent publications, frequent co-authors, or defined subfields of study.

Although detailed information about specific papers, coauthors, and publication venues is not available, the affiliation with Telcordia Technologies suggests involvement in areas related to telecommunications and technology research.

No book publications or awards have been recorded in the available data, and there are no specified main fields or subfields of study linked to their work. Likewise, there is no information about predominant research topics or scientific contributions in the form of recognized publications or collaborations.

This profile reflects a scientist with a presence in the research community primarily connected to Telcordia Technologies, with limited publicly documented scholarly outputs or notable academic markers in the available dataset.

Best Publications

  • Extreme selectivity in the lift‐off of epitaxial GaAs films

    Eli Yablonovitch;T. Gmitter;J. P. Harbison;R. Bhat

  • Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

    J.L. Jewell;J.P. Harbison;A. Scherer;Y.H. Lee

  • Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs

    D. E. Aspnes;J. P. Harbison;A. A. Studna;L. T. Florez

  • Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

    E. Yablonovitch;D. M. Hwang;T. J. Gmitter;L. T. Florez

  • Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers

    C.J. Chang-Hasnain;J.P. Harbison;G. Hasnain;A.C. Von Lehmen

  • Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

    David V. Lang;J. David Cohen;James P. Harbison

  • Low-Threshold Electrically Pumped Vertical Cavity Surface-Emitting Microlasers

    J. L. Jewell;Axel Scherer;S. L. McCall;Y. H. Lee

  • Observation of pair currents in superconductor-semiconductor contacts.

    A. Kastalsky;A. W. Kleinsasser;L. H. Greene;R. Bhat

  • Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition

    Itaru Kamiya;D. E. Aspnes;H. Tanaka;L. T. Florez

  • Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001).

    Aspnes De;Harbison Jp;Studna Aa;Florez Lt

  • Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs

    M. Tanaka;J. P. Harbison;J. DeBoeck;T. Sands

  • Multiple wavelength tunable surface-emitting laser arrays

    C.J. Chang-Hasnain;J.P. Harbison;C.-E. Zah;M.W. Maeda

  • Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes

    Y. H. Lee;J. L. Jewell;Axel Scherer;S. L. McCall

  • EPITAXIAL ORIENTATION AND MAGNETIC PROPERTIES OF MNAS THIN FILMS GROWN ON (001) GAAS : TEMPLATE EFFECTS

    M. Tanaka;J. P. Harbison;M. C. Park;Y. S. Park

  • Stable and epitaxial metal/III-V semiconductor heterostructures

    T. Sands;C.J. Palmstrøm;J.P. Harbison;V.G. Keramidas

  • Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report

    Ernst G. Bauer;Brian W. Dodson;Daniel J. Ehrlich;Leonard C. Feldman

  • Surface-Emitting Microlasers for Photonic Switching and Interchip Connections

    J. L. Jewell;Y. H. Lee;Axel Scherer;S. L. McCall

  • Transverse mode characteristics of vertical cavity surface-emitting lasers

    C. J. Chang‐Hasnain;M. Orenstein;A. Von Lehmen;L. T. Florez

  • Photon-mediated sequential resonant tunneling in intense terahertz electric fields.

    P. S. S. Guimaraes;Brian J. Keay;Jann P. Kaminski;S. J. Allen

  • MOLECULAR BEAM EPITAXY OF MNAS THIN FILMS ON GAAS

    M. Tanaka;J. P. Harbison;T. Sands;T. L. Cheeks

  • Kinetics of silicon‐induced mixing of AlAs‐GaAs superlattices

    P. Mei;H. W. Yoon;T. Venkatesan;S. A. Schwarz

  • Molecular‐beam epitaxy growth mechanisms on GaAs(100) surfaces

    Unknown

Frequent Co-Authors

Axel Scherer
Axel Scherer California Institute of Technology
Timothy D. Sands
Timothy D. Sands Virginia Tech
Rajaram Bhat
Rajaram Bhat Corning (United States)
D. M. Hwang
D. M. Hwang École Polytechnique Fédérale de Lausanne
Masaaki Tanaka
Masaaki Tanaka University of Tokyo
Harold G. Craighead
Harold G. Craighead Cornell University
Chris Palmstrom
Chris Palmstrom University of California, Santa Barbara
Eli Kapon
Eli Kapon École Polytechnique Fédérale de Lausanne
S. S. Lau
S. S. Lau University of California, San Diego
Manfred Helm
Manfred Helm Helmholtz-Zentrum Dresden-Rossendorf

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