World's Best Scientists 2026 revealed!
Masaharu Oshima

Masaharu Oshima

D-Index & Metrics

Materials Science

D-Index
66
Citations
16207
World Ranking
5328
National Ranking
259

Masaharu Oshima publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Masaharu Oshima sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 690 publications — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Masaharu Oshima D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Masaharu Oshima sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 66 D-Index — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Masaharu Oshima is a researcher affiliated with the University of Tokyo in Japan, with a focus on engineering and materials science. Their work covers several subfields, including electrical and electronic engineering, materials chemistry, surfaces, coatings and films, biomedical engineering, and mechanical engineering.

The research topics explored by Oshima include advancements in battery materials, electron and X-ray spectroscopy techniques, graphene research and applications, ZnO doping and properties, nanowire synthesis and applications, semiconductor materials and devices, and extraction and separation processes.

Several recent papers illustrate the scope of their research activities:

  • Facet-dependent electrochemical performance and electronic structure of LiCoO2 polyhedral particles revealed by microscopic resonant X-ray photoelectron spectroscopy (2022, CrystEngComm)
  • Photoelectron spectromicroscopy analysis of graphene during gate-controlled photo-oxidation process (2022, Nano Express)
  • Analysis of Electrode Materials for Li-Ion Batteries by Synchrotron Soft X-Ray Microspectroscopy (2023, ECS Meeting Abstracts)

Oshima frequently collaborates with several co-authors, including Naoka Nagamura, Wen-Xiong Zhang, Eiji Hosono, Daisuke Asakura, and Shingo Tanaka. These collaborations have contributed to multiple publications, consolidating the research cluster around materials science and spectroscopy.

Their work has appeared in notable publication venues such as Nano Express, CrystEngComm, and ECS Meeting Abstracts, each representing different facets of materials chemistry and engineering research.

Best Publications

  • Carbon Alloy Catalysts: Active Sites for Oxygen Reduction Reaction

    Takashi Ikeda;Mauro Boero;Sheng-Feng Huang;Kiyoyuki Terakura

  • X-ray absorption analysis of nitrogen contribution to oxygen reduction reaction in carbon alloy cathode catalysts for polymer electrolyte fuel cells

    Hideharu Niwa;Koji Horiba;Yoshihisa Harada;Masaharu Oshima

  • Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

    Z. Wei;Y. Kanzawa;K. Arita;Y. Katoh

  • Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

    Takahiro Kondo;Simone Casolo;Tetsuya Suzuki;Taishi Shikano

  • Universal passivation effect of (NH4)2Sx treatment on the surface of III-V compound semiconductors

    Haruhiro Oigawa;Jia-Fa Fan;Yasuo Nannichi;Hirohiko Sugahara

  • Chemical structure of the ultrathin SiO 2 / S i ( 100 ) interface: An angle-resolved Si 2 p photoemission study

    J. H. Oh;H. W. Yeom;Y. Hagimoto;K. Ono

  • First-principles calculation of the electronic properties of graphene clusters doped with nitrogen and boron: Analysis of catalytic activity for the oxygen reduction reaction

    Sheng-Feng Huang;Kiyoyuki Terakura;Kiyoyuki Terakura;Taisuke Ozaki;Takashi Ikeda

  • Dimensional-Crossover-Driven Metal-Insulator Transition in SrVO3 Ultrathin Films

    K. Yoshimatsu;T. Okabe;H. Kumigashira;H. Kumigashira;S. Okamoto

  • Interplay between nitrogen dopants and native point defects in graphene

    Zhufeng Hou;Xianlong Wang;Takashi Ikeda;Kiyoyuki Terakura;Kiyoyuki Terakura

  • A high-resolution synchrotron-radiation angle-resolved photoemission spectrometer with in situ oxide thin film growth capability

    K. Horiba;H. Ohguchi;H. Kumigashira;M. Oshima

  • Electronic Band Structure of Transparent Conductor: Nb-Doped Anatase TiO2

    Taro Hitosugi;Hideyuki Kamisaka;Koichi Yamashita;Hiroyuki Nogawa

  • Synchrotron radiation photoemission analysis for (NH4)2Sx‐treated GaAs

    Hirohiko Sugahara;Masaharu Oshima;Haruhiro Oigawa;Hidemi Shigekawa

  • Fabrication, magnetic properties, and electronic structures of nanoscale zinc-blende MnAs dots (invited)

    Kanta Ono;Jun Okabayashi;Masaki Mizuguchi;Masaharu Oshima

  • Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy

    D. Toyota;I. Ohkubo;H. Kumigashira;M. Oshima

  • Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces

    T. Ohnishi;K. Shibuya;M. Lippmaa;D. Kobayashi

  • Origin of metallic states at the heterointerface between the band insulators LaAlO3 and SrTiO3.

    K. Yoshimatsu;R. Yasuhara;H. Kumigashira;M. Oshima

  • Hole-doping-induced changes in the electronic structure of La 1 − x Sr x FeO 3 : Soft x-ray photoemission and absorption study of epitaxial thin films

    H. Wadati;D. Kobayashi;H. Kumigashira;K. Okazaki

  • Electronic structure of N-doped graphene with native point defects

    Zhufeng Hou;Xianlong Wang;Takashi Ikeda;Kiyoyuki Terakura;Kiyoyuki Terakura

  • Metallic Quantum Well States in Artificial Structures of Strongly Correlated Oxide

    K. Yoshimatsu;K. Horiba;H. Kumigashira;H. Kumigashira;T. Yoshida

  • Surface Damage on Si Substrates Caused by Reactive Sputter Etching

    Norikuni Yabumoto;Masaharu Oshima;Osamu Michikami;Shizuka Yoshii

  • Blue and ultraviolet cathodoluminescence from Mn-doped epitaxial ZnO thin films

    Zheng Wu Jin;Y. Z. Yoo;T. Sekiguchi;T. Chikyow

Frequent Co-Authors

Hiroshi Kumigashira
Hiroshi Kumigashira Tohoku University
Kanta Ono
Kanta Ono High Energy Accelerator Research Organization
Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
A. Fujimori
A. Fujimori University of Tokyo
Tsuyoshi Ohnishi
Tsuyoshi Ohnishi National Institute for Materials Science
Zhi Liu
Zhi Liu ShanghaiTech University
Yuji Matsumoto
Yuji Matsumoto Nara Institute of Science and Technology
Masaaki Tanaka
Masaaki Tanaka University of Tokyo
Kiyoyuki Terakura
Kiyoyuki Terakura National Institute for Materials Science

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