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Materials Science

D-Index
56
Citations
9421
World Ranking
8377
National Ranking
480

Tsuyoshi Ohnishi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tsuyoshi Ohnishi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 252 publications — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tsuyoshi Ohnishi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tsuyoshi Ohnishi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tsuyoshi Ohnishi is affiliated with the National Institute for Materials Science in Japan. Their research primarily spans the fields of engineering and materials science, with a strong emphasis on electrical and electronic engineering as well as automotive engineering. Subfields also include atomic and molecular physics and optics, materials chemistry, and surfaces, coatings, and films.

The scientific work of Tsuyoshi Ohnishi is focused on several core topics:

  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Advanced Battery Technologies Research
  • Electron and X-Ray Spectroscopy Techniques
  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Extraction and Separation Processes

Their publication record includes a number of papers often appearing in established scientific journals. Notable recent papers are:

  • In Situ Observation of Lithiation and Delithiation Reactions of a Silicon Thin Film Electrode for All-Solid-State Lithium-Ion Batteries by X-ray Photoelectron Spectroscopy, 2020, The Journal of Physical Chemistry Letters
  • High-Rate Capability of LiCoO2 Cathodes, 2020, ACS Applied Energy Materials
  • In Situ X-ray Diffraction of LiCoO2 in Thin-Film Batteries under High-Voltage Charging, 2021, ACS Applied Energy Materials
  • Sputter-Deposited Amorphous Li3PO4 Solid Electrolyte Films, 2022, ACS Omega
  • Visualization and evaluation of lithium diffusion at grain boundaries in Li0.29La0.57TiO3 solid electrolytes using secondary ion mass spectrometry, 2023, Journal of Materials Chemistry A

Tsuyoshi Ohnishi has frequently published in several key venues including:

  • ECS Meeting Abstracts
  • Journal of Materials Chemistry A
  • The Journal of Physical Chemistry Letters
  • ACS Applied Energy Materials
  • Electrochemistry

The researcher has collaborated with colleagues such as Kazunori Takada, Takuya Masuda, Raimu Endo, Naoaki Kuwata, and Kazutaka Mitsuishi, with the highest number of joint publications being 14 with both Kazunori Takada and Takuya Masuda.

Best Publications

  • Atomic‐scale formation of ultrasmooth surfaces on sapphire substrates for high‐quality thin‐film fabrication

    M. Yoshimoto;T. Maeda;T. Ohnishi;H. Koinuma

  • Defects and transport in complex oxide thin films

    Tsuyoshi Ohnishi;Keisuke Shibuya;Takahisa Yamamoto;Mikk Lippmaa

  • Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser deposition

    T. Ohnishi;M. Lippmaa;T. Yamamoto;S. Meguro

  • Identification and separation of radioactive isotope beams by the BigRIPS separator at the RIKEN RI Beam Factory

    N. Fukuda;T. Kubo;T. Ohnishi;N. Inabe

  • Transparent cubic garnet-type solid electrolyte of Al2O3-doped Li7La3Zr2O12

    Yosuke Suzuki;Yosuke Suzuki;K. Kami;K. Watanabe;A. Watanabe

  • Interfacial phenomena in solid-state lithium battery with sulfide solid electrolyte

    Kazunori Takada;Narumi Ohta;Lianqi Zhang;Xiaoxiong Xu

  • 32 Neのスペクトロスコピーと「island of inversion」

    P Doornenbal;H Scheit;N Aoi;S Takeuchi

  • Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy

    T. Ohnishi;A. Ohtomo;M. Kawasaki;K. Takahashi

  • SPECTROPHOTOMETRICAL MEASUREMENT OF INSTANTANEOUS CALCIUM BINDING OF THE RELAXING FACTOR OF MUSCLE.

    Tsuyoshi Ohnishi;Setsuro Ebashi

  • Thickness-dependent electronic structure of ultrathin SrRuO3 films studied by in situ photoemission spectroscopy

    D. Toyota;I. Ohkubo;H. Kumigashira;M. Oshima

  • Preparation of thermally stable TiO2-terminated SrTiO3(100) substrate surfaces

    T. Ohnishi;K. Shibuya;M. Lippmaa;D. Kobayashi

  • A-site layer terminated perovskite substrate: NdGaO3

    Tsuyoshi Ohnishi;Kazuhiro Takahashi;Masashi Nakamura;Masashi Kawasaki

  • In situ growth of superconducting MgB2 thin films with preferential orientation by molecular-beam epitaxy

    W. Jo;J.-U. Huh;T. Ohnishi;A. F. Marshall

  • THE VELOCITY OF CALCIUM BINDING OF ISOLATED SARCOPLASMIC RETICULUM.

    Tsuyoshi Ohnishi;Setsuro Ebashi

  • Porous amorphous silicon film anodes for high-capacity and stable all-solid-state lithium batteries

    Junichi Sakabe;Junichi Sakabe;Narumi Ohta;Tsuyoshi Ohnishi;Kazutaka Mitsuishi

  • Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

    T. Harada;I. Ohkubo;K. Tsubouchi;H. Kumigashira

  • Local switching of two-dimensional superconductivity using the ferroelectric field effect.

    Kei Takahashi;M. Gabay;Didier Jaccard;K. Shibuya

  • Room-Temperature Epitaxial Growth of CeO2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface

    Mamoru Yoshimoto;Kazuki Shimozono;Tatsuro Maeda;Tsuyoshi Ohnishi

  • Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy

    M. Sumiya;M. Tanaka;K. Ohtsuka;S. Fuke

  • Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices.

    M. Takizawa;H. Wadati;K. Tanaka;M. Hashimoto

Frequent Co-Authors

Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Isao Tanihata
Isao Tanihata Beihang University
Takashi Kubo
Takashi Kubo Osaka University
Hiroshi Kumigashira
Hiroshi Kumigashira Tohoku University
Toshio Suda
Toshio Suda National University of Singapore
Hans Geissel
Hans Geissel University of Giessen
Minoru Osada
Minoru Osada Nagoya University
Masaharu Oshima
Masaharu Oshima University of Tokyo
Takeo Kawabata
Takeo Kawabata Kyoto University

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