World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
63
Citations
12876
World Ranking
6255
National Ranking
1593

Nathan W. Cheung publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Nathan W. Cheung sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 254 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Nathan W. Cheung D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Nathan W. Cheung sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Ion
  • Silicon

His main research concerns Optoelectronics, Substrate, Cleave, Plasma-immersion ion implantation and Layer. His research in Optoelectronics intersects with topics in Sapphire and Ion implantation. Nathan W. Cheung has included themes like Thin film and Light-emitting diode in his Sapphire study.

His work carried out in the field of Plasma-immersion ion implantation brings together such families of science as Sputtering and Analytical chemistry. The Analytical chemistry study combines topics in areas such as Electromigration and Cluster. His research integrates issues of Electronic engineering and Integrated circuit in his study of Layer.

His most cited work include:

  • Separation of thin films from transparent substrates by selective optical processing (506 citations)
  • Plasma immersion ion implantation—a fledgling technique for semiconductor processing (356 citations)
  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off (317 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Analytical chemistry, Plasma-immersion ion implantation, Ion implantation and Wafer. His Optoelectronics research incorporates elements of Layer, Substrate and Thin film. His work deals with themes such as Sapphire and Excimer laser, which intersect with Thin film.

He interconnects Oxide, Epitaxy, Diode, Annealing and Transmission electron microscopy in the investigation of issues within Analytical chemistry. The study incorporates disciplines such as Getter, Nanotechnology, Doping and Semiconductor in addition to Plasma-immersion ion implantation. The concepts of his Ion implantation study are interwoven with issues in Hydrogen, Silicon, Amorphous solid, Ionization and Ion beam.

He most often published in these fields:

  • Optoelectronics (43.87%)
  • Analytical chemistry (32.55%)
  • Plasma-immersion ion implantation (31.60%)

What were the highlights of his more recent work (between 2000-2008)?

  • Optoelectronics (43.87%)
  • Cleave (9.91%)
  • Layer (8.96%)

In recent papers he was focusing on the following fields of study:

Nathan W. Cheung mostly deals with Optoelectronics, Cleave, Layer, Wafer and Energy source. His Optoelectronics research integrates issues from Substrate and Plasma-immersion ion implantation. In his work, Nathan W. Cheung performs multidisciplinary research in Cleave and Substrate.

His Layer research incorporates elements of Silicon on insulator, Electronic engineering and Integrated circuit. His Wafer study integrates concerns from other disciplines, such as Ion implantation, Composite material and Silicon. His research in Ion implantation intersects with topics in Hydrogen and Biomedical engineering.

Between 2000 and 2008, his most popular works were:

  • Controlled cleaving process (286 citations)
  • Method and device for controlled cleaving process (214 citations)
  • Controlled cleavage process using pressurized fluid (188 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Ion
  • Silicon

His scientific interests lie mostly in Cleave, Energy source, Substrate, Optoelectronics and Substrate. His research on Optoelectronics often connects related topics like Electronic engineering. His Electronic engineering study incorporates themes from Silicon on insulator and Wafer.

Nathan W. Cheung has included themes like Thin film and Nitride in his Substrate study. He has researched Thin film in several fields, including Microfluidics, Photodetector, Light-emitting diode, Microsystem and Sapphire. His studies deal with areas such as Chemical vapor deposition, Getter, Layer and Transistor, Gate oxide as well as Integrated circuit.

Best Publications

  • Controlled cleaving process

    Francois J. Henley;Nathan W. Cheung

  • Separation of thin films from transparent substrates by selective optical processing

    Nathan W. Cheung;Timothy D. Sands;William S. Wong

  • Damage-free separation of GaN thin films from sapphire substrates

    W. S. Wong;T. Sands;N. W. Cheung

  • Plasma immersion ion implantation—a fledgling technique for semiconductor processing

    Paul K. Chu;Shu Qin;Chung Chan;Nathan W. Cheung

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Cluster tool method using plasma immersion ion implantation

    Francois J. Henley;Nathan Cheung

  • Method and device for controlled cleaving process

    Francois J. Henley;Nathan W. Cheung

  • Controlled cleavage process using pressurized fluid

    Francois J. Henley;Nathan Cheung

  • Method for controlled cleaving process

    Francois J. Henley;Nathan W. Cheung

  • InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials

    Nathan W. Cheung;Timothy David Sands;William S. Wong

  • Proximity gettering with mega-electron-volt carbon and oxygen implantations

    H. Wong;N. W Cheung;P. K. Chu;J. Liu

  • Plasma immersion ion implantation for ULSI processing

    Nathan W. Cheung

  • Pre-semiconductor process implant and post-process film separation

    Francois J. Henley;Nathan W. Cheung

  • Planarizing technique for multilayered substrates

    Francois J. Henley;Nathan Cheung

  • Transfer of patterned ion-cut silicon layers

    C. H. Yun;A. B. Wengrow;N. W. Cheung;Y. Zheng

  • Electromigration characteristics of copper interconnects

    J. Tao;N.W. Cheung;C. Hu

  • Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection microsystems

    J.Alex Chediak;Zhongsheng Luo;Jeonggi Seo;Nathan Cheung

  • Gettering technique for silicon-on-insulator wafers

    Francois J. Henley;Nathan W. Cheung

  • Gettering technique for wafers made using a controlled cleaving process

    Francois J. Henley;Nathan W. Cheung

Frequent Co-Authors

Chenming Hu
Chenming Hu University of California, Berkeley
Paul K. Chu
Paul K. Chu City University of Hong Kong
Timothy D. Sands
Timothy D. Sands Virginia Tech
Kin Man Yu
Kin Man Yu City University of Hong Kong
William S. Wong
William S. Wong University of Waterloo
Seongil Im
Seongil Im Yonsei University
Ronald Gronsky
Ronald Gronsky University of California, Berkeley
Ian G. Brown
Ian G. Brown Lawrence Berkeley National Laboratory
Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Eric A. Stach
Eric A. Stach University of Pennsylvania

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