Nima Mokhlesi

What is he best known for?

The fields of study he is best known for:

• Electrical engineering
• Programming language
• Voltage

His main research concerns Non-volatile memory, Electronic engineering, Memory cell, Electrical engineering and Voltage. His Non-volatile memory research is under the purview of Computer hardware. His Electronic engineering study incorporates themes from NAND gate and Signal.

Nima Mokhlesi has researched Memory cell in several fields, including Threshold voltage, Optoelectronics and Process. His study in the field of Bit line, Gate dielectric and Dielectric also crosses realms of Coupling and Communication channel. His work deals with themes such as Word and Reading, which intersect with Voltage.

His most cited work include:

• Method of making three dimensional NAND memory (297 citations)
• Three dimensional NAND memory (212 citations)
• Compressed event counting technique and application to a flash memory system (200 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Non-volatile memory, Voltage, Computer hardware, NAND gate and Electronic engineering. His Non-volatile memory research is multidisciplinary, relying on both Word, Set, Bit line, Computer data storage and Reading. His Voltage study is concerned with the field of Electrical engineering as a whole.

His work on Flash memory and Auxiliary memory as part of general Computer hardware study is frequently linked to Term and Group, therefore connecting diverse disciplines of science. His NAND gate research incorporates themes from String and Parallel computing. His work investigates the relationship between Electronic engineering and topics such as Memory cell that intersect with problems in Optoelectronics and Semiconductor.

He most often published in these fields:

• Non-volatile memory (55.78%)
• Voltage (31.97%)
• Computer hardware (27.21%)

What were the highlights of his more recent work (between 2010-2016)?

• Non-volatile memory (55.78%)
• NAND gate (27.21%)
• Voltage (31.97%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Non-volatile memory, NAND gate, Voltage, Computer hardware and Computer data storage. His Non-volatile memory study combines topics in areas such as Memory refresh, Sense amplifier, Source lines, Parallel computing and Line. His NAND gate research includes elements of Electronic circuit, Overhead and Electronics.

His work carried out in the field of Voltage brings together such families of science as Electronic engineering, Set and Reading. His research investigates the connection between Set and topics such as Process that intersect with issues in Decoding methods. His studies deal with areas such as Interface, Double data rate, Embedded system and Nand flash memory as well as Computer hardware.

Between 2010 and 2016, his most popular works were:

• Simultaneous multi-state read or verify in non-volatile storage (64 citations)
• Programming non-volatile storage with synchronized coupling (30 citations)
• 128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode (22 citations)

In his most recent research, the most cited papers focused on:

• Electrical engineering
• Programming language
• Voltage

Nima Mokhlesi focuses on Non-volatile memory, Voltage, NAND gate, Line and Word. The various areas that Nima Mokhlesi examines in his Voltage study include Electronic engineering and Set. His Electronic engineering research includes themes of Memory refresh, Auxiliary memory and Reading.

His study in NAND gate is interdisciplinary in nature, drawing from both Computer hardware, Flash memory, Computer data storage and Electronics. The study incorporates disciplines such as Bit line, Selection and Parallel computing in addition to Computer hardware. His research in Line intersects with topics in Data recovery, Speech recognition, Process and Coupling.