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Materials Science

D-Index
58
Citations
11269
World Ranking
7736
National Ranking
432

Research.com Recognitions

  • 2011 - Fellow of the Materials Research Society

Overview

Hiroshi Ishiwara is affiliated with the Tokyo Institute of Technology in Japan, focusing on research within the field of Engineering. Their expertise is concentrated specifically in Electrical and Electronic Engineering.

Their research primarily addresses several key topics including:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Semiconductor Devices and Circuit Design

Hiroshi Ishiwara has collaborated with colleagues in their research, notably with Sung-Min Yoon.

Throughout their career, Ishiwara has contributed to a total of three publications related to the engineering disciplines mentioned above. Their work encompasses both theoretical and applied aspects of semiconductor technologies and device engineering.

In recognition of their contributions to the field, they have been named a Fellow of the Materials Research Society in 2011.

Best Publications

  • Room temperature ferroelectric properties of Mn-substituted BiFeO3 thin films deposited on Pt electrodes using chemical solution deposition

    Unknown

  • Current Status of Ferroelectric Random-Access Memory

    Yoshihiro Arimoto;Hiroshi Ishiwara

  • Ferroelectric random access memories.

    Hiroshi Ishiwara

  • Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes

    Sumiko Fujisaki;Hiroshi Ishiwara;Yoshihisa Fujisaki

  • Double heteroepitaxy in the Si (111)/CoSi2/Si structure

    Shyuichi Saitoh;Hiroshi Ishiwara;Seijiro Furukawa

  • Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures

    E. Tokumitsu;R. Nakamura;H. Ishiwara

  • Epitaxial Growth of SrTiO3 Films on Si(100) Substrates Using a Focused Electron Beam Evaporation Method

    Hiroyuki Mori;Hiroshi Ishiwara

  • Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures

    Byung-Eun Park;Hiroshi Ishiwara

  • Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights

    Hiroshi Ishiwara

  • Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si

    Hiroshi Ishiwara;Tanemasa Asano

  • Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

    Byung-Eun Park;Hiroshi Ishiwara

  • Reduced leakage current in La and Ni codoped BiFeO3 thin films

    S. K. Singh;K. Maruyama;H. Ishiwara

  • Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films

    S. K. Singh;H. Ishiwara;K. Sato;K. Maruyama

  • Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application

    S. Ohmi;C. Kobayashi;I. Kashiwagi;C. Ohshima

  • Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

    S. K. Singh;Y. K. Kim;H. Funakubo;H. Ishiwara

  • Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

    Eisuke Tokumitsu;Gen Fujii;Hiroshi Ishiwara

  • Roles of Buffer Layers in Epitaxial Growth of SrTiO3 Films on Silicon Substrates

    Bum Ki Moon;Hiroshi Ishiwara

  • Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films

    Hyun‐Kwon Ha;Mamoru Yoshimoto;Hideomi Koinuma;Bum‐Ki Moon

  • Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2 Buffer Layers

    Kazuhiro Takahashi;Koji Aizawa;Byung-Eun Park;Hiroshi Ishiwara

  • Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films

    Xusheng Wang;Hiroshi Ishiwara

  • Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates

    Tanemasa Asano;Hiroshi Ishiwara;Noriyuki Kaifu

Frequent Co-Authors

Eisuke Tokumitsu
Eisuke Tokumitsu Japan Advanced Institute of Science and Technology
Hiroshi Funakubo
Hiroshi Funakubo Tokyo Institute of Technology
Xubing Lu
Xubing Lu South China Normal University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Chi-Sun Hwang
Chi-Sun Hwang Electronics and Telecommunications Research Institute
Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology
Masashi Kawasaki
Masashi Kawasaki University of Tokyo
Sang-Hee Ko Park
Sang-Hee Ko Park Korea Advanced Institute of Science and Technology
Sadafumi Yoshida
Sadafumi Yoshida National Institute of Advanced Industrial Science and Technology
Mitsuru Itoh
Mitsuru Itoh Tokyo Institute of Technology

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