World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4700
World Ranking
5398
National Ranking
227

Overview

Eisuke Tokumitsu is affiliated with the Japan Advanced Institute of Science and Technology in Japan. Their research primarily focuses on engineering and materials science, with a notable emphasis on electrical and electronic engineering as well as materials chemistry.

The scientist's work extensively covers topics related to ferroelectric and negative capacitance devices, semiconductor materials and devices, and ferroelectric and piezoelectric materials. Additional research interests include electronic and structural properties of oxides, MXene and MAX phase materials, advanced memory and neural computing, and advanced sensor and energy harvesting materials.

Recent publications by Eisuke Tokumitsu include the following:

  • Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment, 2022, IEEE Electron Device Letters
  • Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process, 2020, Japanese Journal of Applied Physics
  • High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing, 2022, Applied Surface Science
  • Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application, 2020, Japanese Journal of Applied Physics
  • Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process, 2020, Japanese Journal of Applied Physics

Frequent coauthors collaborating with Tokumitsu include:

  • Mohit Mohit
  • Takaaki Miyasako
  • Shinji Migita
  • Hiroyuki Ota
  • Yukinori Morita

The scientist publishes predominantly in the following venues:

  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • Applied Surface Science
  • IEEE Transactions on Electron Devices

Best Publications

  • Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

    Makoto Konagai;Takumi Yamada;Takeshi Akatsuka;Koki Saito

  • Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability

    Takaaki Miyasako;Masaru Senoo;Eisuke Tokumitsu

  • Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source

    Eisuke Tokumitsu;Yoshimitsu Kudou;Makoto Konagai;Kiyoshi Takahashi

  • Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

    Eisuke Tokumitsu;Gen Fujii;Hiroshi Ishiwara

  • Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

    Takumi Yamada;Eisuke Tokumitsu;Koki Saito;Takeshi Akatsuka

  • Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

    Eisuke Tokumitsu;Gen Fujii;Hiroshi Ishiwara

  • Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates

    Eisuke Tokumitsu;Kensuke Itani;Bum–Ki Moon;Hiroshi Ishiwara

  • Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

    Kenichi Umeda;Takaaki Miyasako;Ayumu Sugiyama;Atsushi Tanaka

  • The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

    Gwang-Geun Lee;Eisuke Tokumitsu;Sung-Min Yoon;Yoshihisa Fujisaki

  • Epitaxial Growth of Ferroelectric YMnO3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy

    Shogo Imada;Shigeto Shouriki;Eisuke Tokumitsu;Hiroshi Ishiwara

  • Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

    T. Hatayama;S. Hino;N. Miura;T. Oomori

  • Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation

    Hiroshi Ishiwara;Toshishige Shimamura;Eisuke Tokumitsu

  • Fabrication of PbZrxTi1-xO3 Films on Si Structures Using Y2O3 Buffer Layers

    Byung–Eun Park;Shigeto Shouriki;Eisuke Tokumitsu;Hiroshi Ishiwara

  • Metallic p-type GaAs and InGaAs grown by MOMBE

    Makoto Konagai;Takumi Yamada;Takeshi Akatsuka;Shinji Nozaki

  • Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures

    Eisuke Tokumitsu;Kojiro Okamoto;Hiroshi Ishiwara

  • Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

    Mitsuru Nakata;Kazushige Takechi;Kazufumi Azuma;Eisuke Tokumitsu

  • Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films

    Koji Aizawa;Eisuke Tokumitsu;Kojiro Okamoto;Hiroshi Ishiwara

  • Ferroelectricity of YMnO3 Thin Films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy

    Shogo Imada;Takuya Kuraoka;Eisuke Tokumitsu;Hiroshi Ishiwara

  • Use of ferroelectric gate insulator for thin film transistors with ITO channel

    E. Tokumitsu;M. Senoo;T. Miyasako

  • High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

    Phan Trong Tue;T. Miyasako;Jinwang Li;Huynh Thi Cam Tu

Frequent Co-Authors

Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology
Tatsuya Shimoda
Tatsuya Shimoda Japan Advanced Institute of Science and Technology
Makoto Konagai
Makoto Konagai Tokyo City University
Tadaoki Mitani
Tadaoki Mitani Japan Advanced Institute of Science and Technology
Hiroshi Funakubo
Hiroshi Funakubo Tokyo Institute of Technology
Kazuhiko Matsumoto
Kazuhiko Matsumoto Kyoto University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Shinji Kohara
Shinji Kohara National Institute for Materials Science
Chi-Sun Hwang
Chi-Sun Hwang Electronics and Telecommunications Research Institute
Sang-Hee Ko Park
Sang-Hee Ko Park Korea Advanced Institute of Science and Technology

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Exploring online degree options can complement traditional studies in Electronics and Electrical Engineering. For those interested in expanding their skill set, pursuing one of the best online instructional design master's programs offers a pathway to roles in technical education and training within engineering fields.

Flexibility is crucial for many students, especially working professionals or those balancing family commitments. Institutions recognized among the best competency-based colleges provide self-paced curricula that allow learners to advance by demonstrating skills, making it easier to integrate studies with real-world experience in electronics and electrical engineering.

Moreover, there are specialized options for military families. The best online college for military spouses rankings highlight schools that offer supportive environments and flexible programs specially tailored to address the unique challenges faced by military dependents.

For those eager to start promptly, exploring online colleges that start soon can help minimize waiting times and expedite entry into degree programs or certifications linked to electrical and electronics engineering careers.

Best Scientists Citing Eisuke Tokumitsu

Trending Scientists