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Eisuke Tokumitsu

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 36 5398 5183 227 214 238 4700

Eisuke Tokumitsu publications per year

The chart shows the history of publications by Eisuke Tokumitsu between 1983 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Eisuke Tokumitsu published across 42 years, from 1983 to 2024, averaging 6.3 papers a year. Output peaked at 13 publications in 1997. 5 of the 265 publications appeared in the last two years.

No. of publications
5 10
Bar chart. Horizontal axis: year, 1983 to 2024. Vertical axis: number of publications, 0 to 13. Peak 13 publications in 1997. 1983: 2 publications 1984: 2 publications 1985: 1 publication 1986: 3 publications 1987: 1 publication 1988: 1 publication 1989: 9 publications 1990: 6 publications 1991: 6 publications 1992: 3 publications 1993: 8 publications 1994: 4 publications 1995: 8 publications 1996: 7 publications 1997: 13 publications 1998: 10 publications 1999: 13 publications 2000: 9 publications 2001: 10 publications 2002: 8 publications 2003: 12 publications 2004: 8 publications 2005: 5 publications 2006: 4 publications 2007: 6 publications 2008: 6 publications 2009: 6 publications 2010: 10 publications 2011: 10 publications 2012: 10 publications 2013: 8 publications 2014: 11 publications 2015: 3 publications 2016: 4 publications 2017: 2 publications 2018: 3 publications 2019: 4 publications 2020: 9 publications 2021: 8 publications 2022: 7 publications 2023: 2 publications 2024: 3 publications
1983 2024

265 publications in total across all disciplines

View publications per year as a table
Eisuke Tokumitsu: publications per year, 1983 to 2024
Year Publications
1983 2
1984 2
1985 1
1986 3
1987 1
1988 1
1989 9
1990 6
1991 6
1992 3
1993 8
1994 4
1995 8
1996 7
1997 13
1998 10
1999 13
2000 9
2001 10
2002 8
2003 12
2004 8
2005 5
2006 4
2007 6
2008 6
2009 6
2010 10
2011 10
2012 10
2013 8
2014 11
2015 3
2016 4
2017 2
2018 3
2019 4
2020 9
2021 8
2022 7
2023 2
2024 3
Total 265
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Eisuke Tokumitsu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Eisuke Tokumitsu sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 238 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 238
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Eisuke Tokumitsu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Eisuke Tokumitsu sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 36 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211 36
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Eisuke Tokumitsu is affiliated with the Japan Advanced Institute of Science and Technology in Japan. Their research primarily focuses on engineering and materials science, with a notable emphasis on electrical and electronic engineering as well as materials chemistry.

The scientist's work extensively covers topics related to ferroelectric and negative capacitance devices, semiconductor materials and devices, and ferroelectric and piezoelectric materials. Additional research interests include electronic and structural properties of oxides, MXene and MAX phase materials, advanced memory and neural computing, and advanced sensor and energy harvesting materials.

Recent publications by Eisuke Tokumitsu include the following:

  • Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment, 2022, IEEE Electron Device Letters
  • Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process, 2020, Japanese Journal of Applied Physics
  • High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing, 2022, Applied Surface Science
  • Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application, 2020, Japanese Journal of Applied Physics
  • Indium oxide and indium-tin-oxide channel ferroelectric gate thin film transistors with yttrium doped hafnium-zirconium dioxide gate insulator prepared by chemical solution process, 2020, Japanese Journal of Applied Physics

Frequent coauthors collaborating with Tokumitsu include:

  • Mohit Mohit
  • Takaaki Miyasako
  • Shinji Migita
  • Hiroyuki Ota
  • Yukinori Morita

The scientist publishes predominantly in the following venues:

  • Japanese Journal of Applied Physics
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • Applied Surface Science
  • IEEE Transactions on Electron Devices

Best Publications

  • Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

    Makoto Konagai;Takumi Yamada;Takeshi Akatsuka;Koki Saito

  • Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability

    Takaaki Miyasako;Masaru Senoo;Eisuke Tokumitsu

  • Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source

    Eisuke Tokumitsu;Yoshimitsu Kudou;Makoto Konagai;Kiyoshi Takahashi

  • Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

    Eisuke Tokumitsu;Gen Fujii;Hiroshi Ishiwara

  • Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

    Takumi Yamada;Eisuke Tokumitsu;Koki Saito;Takeshi Akatsuka

  • Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor (MFIS)- and Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

    Eisuke Tokumitsu;Gen Fujii;Hiroshi Ishiwara

  • Crystalline Quality and Electrical Properties of PbZrxTi1-xO3 Thin Films Prepared on SrTiO3-Covered Si Substrates

    Eisuke Tokumitsu;Kensuke Itani;Bum–Ki Moon;Hiroshi Ishiwara

  • Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors

    Kenichi Umeda;Takaaki Miyasako;Ayumu Sugiyama;Atsushi Tanaka

  • The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

    Gwang-Geun Lee;Eisuke Tokumitsu;Sung-Min Yoon;Yoshihisa Fujisaki

  • Epitaxial Growth of Ferroelectric YMnO3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy

    Shogo Imada;Shigeto Shouriki;Eisuke Tokumitsu;Hiroshi Ishiwara

  • Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

    T. Hatayama;S. Hino;N. Miura;T. Oomori

  • Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation

    Hiroshi Ishiwara;Toshishige Shimamura;Eisuke Tokumitsu

  • Fabrication of PbZrxTi1-xO3 Films on Si Structures Using Y2O3 Buffer Layers

    Byung–Eun Park;Shigeto Shouriki;Eisuke Tokumitsu;Hiroshi Ishiwara

  • Metallic p-type GaAs and InGaAs grown by MOMBE

    Makoto Konagai;Takumi Yamada;Takeshi Akatsuka;Shinji Nozaki

  • Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures

    Eisuke Tokumitsu;Kojiro Okamoto;Hiroshi Ishiwara

  • Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

    Mitsuru Nakata;Kazushige Takechi;Kazufumi Azuma;Eisuke Tokumitsu

  • Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films

    Koji Aizawa;Eisuke Tokumitsu;Kojiro Okamoto;Hiroshi Ishiwara

  • Ferroelectricity of YMnO3 Thin Films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy

    Shogo Imada;Takuya Kuraoka;Eisuke Tokumitsu;Hiroshi Ishiwara

  • Use of ferroelectric gate insulator for thin film transistors with ITO channel

    E. Tokumitsu;M. Senoo;T. Miyasako

  • High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

    Phan Trong Tue;T. Miyasako;Jinwang Li;Huynh Thi Cam Tu

Frequent Co-Authors

Hiroshi Ishiwara
Hiroshi Ishiwara Tokyo Institute of Technology
Tatsuya Shimoda
Tatsuya Shimoda Japan Advanced Institute of Science and Technology
Makoto Konagai
Makoto Konagai Tokyo City University
Tadaoki Mitani
Tadaoki Mitani Japan Advanced Institute of Science and Technology
Hiroshi Funakubo
Hiroshi Funakubo Tokyo Institute of Technology
Kazuhiko Matsumoto
Kazuhiko Matsumoto Kyoto University
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Shinji Kohara
Shinji Kohara National Institute for Materials Science
Chi-Sun Hwang
Chi-Sun Hwang Electronics and Telecommunications Research Institute
Sang-Hee Ko Park
Sang-Hee Ko Park Korea Advanced Institute of Science and Technology

External Links

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Best Scientists Citing Eisuke Tokumitsu

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Hiroshi Ishiwara

Tokyo Institute of Technology

Publications: 43

Tatsuya Shimoda

Tatsuya Shimoda

Japan Advanced Institute of Science and Technology

Publications: 40

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 31

C. R. Abernathy

C. R. Abernathy

University of Florida

Publications: 21

Fan Ren

Fan Ren

University of Florida

Publications: 20

Masanori Okuyama

Masanori Okuyama

Osaka University

Publications: 19

Makoto Konagai

Makoto Konagai

Tokyo City University

Publications: 15

Hiroshi Iwai

Hiroshi Iwai

Tokyo Institute of Technology

Publications: 13

Yoshiji Horikoshi

Yoshiji Horikoshi

Waseda University

Publications: 11

Cheolmin Park

Cheolmin Park

Yonsei University

Publications: 11

Hyun Jae Kim

Hyun Jae Kim

Yonsei University

Publications: 10

Yichun Zhou

Yichun Zhou

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Publications: 9

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Ulrich Gösele

Max Planck Society

Publications: 9

Ying-Hao Chu

Ying-Hao Chu

National Yang Ming Chiao Tung University

Publications: 8

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Jeong Yong Lee

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Publications: 8

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