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Masanori Okuyama

Masanori Okuyama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
7697
World Ranking
4084
National Ranking
160

Overview

Masanori Okuyama is affiliated with Osaka University in Japan, where their research focuses primarily on materials science and engineering. Their work spans several subfields, including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, computational mechanics, and polymers and plastics.

Their research contributions are grounded in topics related to ferroelectric and piezoelectric materials, ferroelectric and negative capacitance devices, electronic and structural properties of oxides, multiferroics and related materials, magnetic and transport properties of perovskites and related materials, magneto-optical properties and applications, and surface roughness and optical measurements.

They have co-authored research with several frequent collaborators, including J.M. Park, Joonsung Park, and Takeshi Kanashima.

Okuyama has published research primarily in the Japanese Journal of Applied Physics, with notable recent papers including:

  • Characterization of columnar BiFeO3 thick films prepared by magnetic field-assisted pulsed laser deposition, 2024, Japanese Journal of Applied Physics
  • Characterization of polycrystalline BiFeO3 films prepared by magnetic-field-assisted 90° off-axis pulsed laser deposition, 2024, Japanese Journal of Applied Physics

Their work involves detailed experimental studies on bismuth ferrite (BiFeO3) thin films, utilizing advanced deposition techniques assisted by magnetic fields to analyze microstructural and functional properties. The focus on pulsed laser deposition techniques highlights their engagement with thin-film fabrication methods relevant to electronic and magnetic device applications.

Masanori Okuyama's research output reflects interdisciplinary integration across materials science and engineering disciplines, emphasizing functional oxides with applications in ferroelectricity and magneto-optical materials.

Best Publications

  • Giant Ferroelectric Polarization Beyond 150 μC/cm2 in BiFeO3 Thin Film

    Kwi Young Yun;Dan Ricinschi;Takeshi Kanashima;Minoru Noda

  • Structural and multiferroic properties of BiFeO3 thin films at room temperature

    Kwi Young Yun;Minoru Noda;Masanori Okuyama;Hiromasa Saeki

  • Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition

    Kwi Young Yun;Minoru Noda;Masanori Okuyama

  • A mechanism for the 150 µC cm(-2) polarization of BiFeO(3) films based on first-principles calculations and new structural data.

    Dan Ricinschi;Kwi-Young Yun;Masanori Okuyama

  • Enhancement of electrical properties in polycrystalline BiFeO3 thin films

    Kwi Young Yun;Dan Ricinschi;Takeshi Kanashima;Masanori Okuyama

  • Preparation and basic properties of PbTiO3 ferroelectric thin films and their device applications

    M. Okuyama;Y. Hamakawa

  • Arrayed ultrasonic microsensors with high directivity for in-air use using PZT thin film on silicon diaphragms ☆

    Kaoru Yamashita;Hiroshi Katata;Masanori Okuyama;Hiromi Miyoshi

  • Analysis of ferroelectric switching in finite media as a Landau-type phase transition

    Dan Ricinschi;Catalin Harnagea;Constantin Papusoi;Liliana Mitoseriu

  • First-order reversal curves diagrams for the characterization of ferroelectric switching

    Alexandru Stancu;Dan Ricinschi;Liliana Mitoseriu;Petronel Postolache

  • Epitaxial growth of ferroelectric PLZT thin film and their optical properties

    M. Okuyama;T. Usuki;Y. Hamakawa;T. Nakagawa

  • Low Temperature Growth of SiO2 Thin Film by Double-Excitation Photo-CVD

    Kohji Inoue;Masanori Michimori;Masanori Okuyama;Yoshihiro Hamakawa

  • Strained SrTiO3/BaTiO3 Superlattices Formed by Laser Ablation Technique and Their High Dielectric Properties

    Hitoshi Tabata;Hidekazu Tanaka;Tomoji Kawai;Masanori Okuyama

  • Tactile sensor array using microcantilever with nickel–chromium alloy thin film of low temperature coefficient of resistance and its application to slippage detection

    Masayuki Sohgawa;Daiki Hirashima;Yusuke Moriguchi;Tatsuya Uematsu

  • Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory

    Mitsue Takahashi;Hideki Sugiyama;Toshiyuki Nakaiso;Kazushi Kodama

  • “MFS FET” -A New Type of Nonvolatile Memory Switch Using PLZT Film

    Yasuyuki Higuma;Yasushi Matsui;Masanori Okuyama;Taichi Nakagawa

  • A new type of dielectric bolometer mode of detector pixel using ferroelectric thin film capacitors for infrared image sensor

    Minoru Noda;Kazuhiko Hashimoto;Ryuichi Kubo;Hidekazu Tanaka

  • Ferroelectric Properties of RF Sputtered PLZT Thin Film

    Taichi Nakagawa;Jiro Yamaguchi;Tatsuro Usuki;Yasushi Matsui

  • Preparation of PbTiO 3 Ferroelectric Thin Film by Chemical Vapor Deposition

    Taichi Nakagawa;Jiro Yamaguchi;Masanori Okuyama;Yoshihiro Hamakawa

  • PbTiO3 ferroelectric thin film gate fet for infrared detection

    M. Okuyama;Y. Matsui;H. Nakano;Y. Hamakawa

  • Ferroelectric Thin Films

    Masanori Okuyama;Yoshihiro Ishibashi

Frequent Co-Authors

Yoshihiro Hamakawa
Yoshihiro Hamakawa Osaka University
Liliana Mitoseriu
Liliana Mitoseriu Alexandru Ioan Cuza University
Hitoshi Tabata
Hitoshi Tabata University of Tokyo
Hiroshi Funakubo
Hiroshi Funakubo Tokyo Institute of Technology
Catalin Harnagea
Catalin Harnagea Institut National de la Recherche Scientifique
Hidekazu Tanaka
Hidekazu Tanaka Ritsumeikan University
Tomoji Kawai
Tomoji Kawai Osaka University
Jianmin Miao
Jianmin Miao Shanghai Jiao Tong University
Paul K. Chu
Paul K. Chu City University of Hong Kong
Osami Sakata
Osami Sakata Japan Synchrotron Radiation Research Institute

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