World's Best Scientists 2026 revealed!
Tian-Ling Ren

Tian-Ling Ren

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
78
Citations
24684
World Ranking
574
National Ranking
90

Materials Science

D-Index
79
Citations
24964
World Ranking
2792
National Ranking
895

Tian-Ling Ren publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tian-Ling Ren sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 651 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tian-Ling Ren D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tian-Ling Ren sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 78 D-Index — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tian-Ling Ren is affiliated with Tsinghua University in China. Their research spans multiple fields, primarily focusing on engineering and materials science. Within these broad domains, their work extensively covers electrical and electronic engineering, biomedical engineering, materials chemistry, cognitive neuroscience, and polymers and plastics.

Their scientific contributions address a range of specialized topics, including:

  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Memory and Neural Computing
  • Gas Sensing Nanomaterials and Sensors
  • Ferroelectric and Negative Capacitance Devices
  • Tactile and Sensory Interactions
  • Perovskite Materials and Applications
  • 2D Materials and Applications

Ren's publication record includes articles in several high-impact venues. Among the most frequent publication venues are:

  • ACS Nano
  • IEEE Transactions on Electron Devices
  • ACS Applied Materials & Interfaces
  • IEEE Electron Device Letters
  • Advanced Functional Materials

Their recent research output features a number of papers that have garnered significant citations. Notable recent publications include:

  • "Vertical MoS2 transistors with sub-1-nm gate lengths," published in 2022 in Nature
  • "Triode-Mimicking Graphene Pressure Sensor with Positive Resistance Variation for Physiology and Motion Monitoring," published in 2020 in ACS Nano
  • "Multifunctional Graphene Microstructures Inspired by Honeycomb for Ultrahigh Performance Electromagnetic Interference Shielding and Wearable Applications," published in 2021 in ACS Nano
  • "A Better Zn-Ion Storage Device: Recent Progress for Zn-Ion Hybrid Supercapacitors," published in 2022 in Nano-Micro Letters
  • "Breathable Electronic Skins for Daily Physiological Signal Monitoring," published in 2022 in Nano-Micro Letters

Coauthorship is an element of their research activity, with collaborations including frequent partnerships with:

  • He Tian
  • Yi Yang
  • Houfang Liu
  • Tianrui Cui
  • Xiangshun Geng

Best Publications

  • Carbonized Silk Fabric for Ultrastretchable, Highly Sensitive, and Wearable Strain Sensors

    Chunya Wang;Xiang Li;Enlai Gao;Muqiang Jian

  • Vertical MoS2 transistors with sub-1-nm gate lengths

    Unknown

  • Epidermis Microstructure Inspired Graphene Pressure Sensor with Random Distributed Spinosum for High Sensitivity and Large Linearity.

    Yu Pang;Kunning Zhang;Zhen Yang;Song Jiang

  • Graphene-Paper Pressure Sensor for Detecting Human Motions.

    Lu-Qi Tao;Kun-Ning Zhang;He Tian;Ying Liu

  • Carbon nanotube based biosensors

    Ning Yang;Xianping Chen;Xianping Chen;Tianling Ren;Ping Zhang

  • Graphene Textile Strain Sensor with Negative Resistance Variation for Human Motion Detection

    Zhen Yang;Yu Pang;Xiao-lin Han;Yifan Yang

  • A Graphene-Based Resistive Pressure Sensor with Record-High Sensitivity in a Wide Pressure Range

    He Tian;Yi Shu;Xue-Feng Wang;Mohammad Ali Mohammad

  • An intelligent artificial throat with sound-sensing ability based on laser induced graphene

    Lu-Qi Tao;He Tian;He Tian;Ying Liu;Zhen-Yi Ju

  • Flexible, Highly Sensitive, and Wearable Pressure and Strain Sensors with Graphene Porous Network Structure

    Yu Pang;He Tian;Luqi Tao;Yuxing Li

  • Scalable fabrication of high-performance and flexible graphene strain sensors

    He Tian;Yi Shu;Ya-Long Cui;Wen-Tian Mi

  • Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing

    He Tian;Lianfeng Zhao;Xuefeng Wang;Yao Wen Yeh

  • Wearable humidity sensor based on porous graphene network for respiration monitoring.

    Yu Pang;Jinming Jian;Tao Tu;Zhen Yang

  • A review of small heat pipes for electronics

    Xianping Chen;Xianping Chen;Huaiyu Ye;Xuejun Fan;Tianling Ren

  • Multilayer Graphene Epidermal Electronic Skin.

    Yancong Qiao;Yunfan Wang;He Tian;Mingrui Li

  • A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

    Xia Wan;Yang Xu;Yang Xu;Hongwei Guo;Khurram Shehzad

  • Graphene Dynamic Synapse with Modulatable Plasticity

    He Tian;Wentian Mi;Xue-Feng Wang;Haiming Zhao

  • Triode-Mimicking Graphene Pressure Sensor with Positive Resistance Variation for Physiology and Motion Monitoring

    Qi Wu;Yancong Qiao;Rui Guo;Shayan Naveed

  • Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene.

    Nan Liu;He Tian;Gregor Schwartz;Jeffrey B.-H. Tok

  • Graphene-on-paper sound source devices.

    He Tian;Tian-Ling Ren;Dan Xie;Yu-Feng Wang

  • Surface acoustic wave devices for sensor applications

    Unknown

  • Graphene/semiconductor heterojunction solar cells with modulated antireflection and graphene work function

    Yuxuan Lin;Xinming Li;Dan Xie;Tingting Feng

  • A Novel Solid-State Thermal Rectifier Based On Reduced Graphene Oxide

    He Tian;Dan Xie;Yi Yang;Tian-Ling Ren

Frequent Co-Authors

He Tian
He Tian East China University of Science and Technology
Dan Xie
Dan Xie Tsinghua University
Yutao Li
Yutao Li Chinese Academy of Sciences
Hongwei Zhu
Hongwei Zhu Tsinghua University
Yingying Zhang
Yingying Zhang Tsinghua University
Yuegang Zhang
Yuegang Zhang Tsinghua University
Jikui Luo
Jikui Luo Zhejiang University
Xiaomu Wang
Xiaomu Wang Nanjing University
Guoqi Zhang
Guoqi Zhang Delft University of Technology
Lan Xiang
Lan Xiang Tsinghua University

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Related Online Degrees & Career Pathways

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Beyond engineering, many students also explore online masters in instructional design, which can complement technical expertise with skills in training development and educational technology. This combination can open doors to careers in corporate training, technical education, and beyond.

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