World's Best Scientists 2026 revealed!
Sangsig Kim

Sangsig Kim

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
6467
World Ranking
5089
National Ranking
174

Sangsig Kim publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sangsig Kim sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 328 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sangsig Kim D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sangsig Kim sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sangsig Kim is affiliated with Korea University in South Korea and has focused their research primarily in engineering, with significant contributions to electrical and electronic engineering. Their work has also extended to materials chemistry, biomedical engineering, artificial intelligence, and cellular and molecular neuroscience.

The main topics covered by Sangsig Kim include semiconductor materials and devices, advanced memory and neural computing, advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, thin-film transistor technologies, advanced thermoelectric materials and devices, and nanowire synthesis and applications.

Frequent publication venues for Sangsig Kim include Scientific Reports, Advanced Electronic Materials, Advanced Materials Technologies, Nanotechnology, and Transactions on Electrical and Electronic Materials.

Some of their notable recent papers are:

  • "Quasi-Nonvolatile Silicon Memory Device," 2020, Advanced Materials Technologies
  • "Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor," 2020, IEEE Transactions on Electron Devices
  • "Single Silicon Neuron Device Enabling Neuronal Oscillation and Stochastic Dynamics," 2021, IEEE Electron Device Letters
  • "Performance Prediction of Hybrid Energy Harvesting Devices Using Machine Learning," 2022, ACS Applied Materials & Interfaces
  • "Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistors," 2021, Nanotechnology

Their research collaboration network includes frequent coauthors such as Kyoungah Cho, Jaemin Son, Juhee Jeon, Yunwoo Shin, and Doohyeok Lim.

Best Publications

  • High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.

    Woong Choi;Mi Yeon Cho;Aniruddha Konar;Jong Hak Lee

  • Photocurrent in ZnO nanowires grown from Au electrodes

    Kihyun Keem;Hyunsuk Kim;Gyu Tae Kim;Jong Soo Lee

  • Photoresponse of sol-gel-synthesized ZnO nanorods

    Seung Eon Ahn;Jong Soo Lee;Hyunsuk Kim;Sangsig Kim

  • Ultraviolet photodetectors based on ZnO nanoparticles

    Jin Hyung Jun;Hojun Seong;Kyoungah Cho;Byung Moo Moon

  • Strained gallium nitride nanowires

    Hee Won Seo;Seung Yong Bae;Jeunghee Park;Hyunik Yang

  • Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors.

    Kihyun Keem;Dong-Young Jeong;Sangsig Kim;Moon-Sook Lee

  • Sub 5 nm magnetite nanoparticles: Synthesis, microstructure, and magnetic properties

    Jun Hua Wu;Seung Pil Ko;Hong Ling Liu;Sangsig Kim

  • ZnO nanomaterials synthesized from thermal evaporation of ball-milled ZnO powders

    Jong Soo Lee;Kwangsue Park;Myung Il Kang;Il Woo Park

  • Al2O3 Nanotubes Fabricated by Wet Etching of ZnO/Al2O3 Core/Shell Nanofibers

    Joowon Hwang;Byungdon Min;Jong Soo Lee;Kihyun Keem

  • Structural and optoelectronic properties of SnO2 nanowires synthesized from ball-milled SnO2 powders

    Jong Soo Lee;Sung Kyu Sim;Byungdon Min;Kyoungah Cho

  • Necked ZnO nanoparticle-based NO2 sensors with high and fast response

    Jin Hyung Jun;Junggwon Yun;Kyoungah Cho;In Sung Hwang

  • Transparent heaters based on solution-processed indium tin oxide nanoparticles

    Kiju Im;Kyoungah Cho;Jonghyun Kim;Sangsig Kim

  • Parallel UPS with a instantaneous current sharing control

    C.S. Lee;S. Kim;C.B. Kim;S.C. Hong

  • Flexible TFTs based on solution-processed ZnO nanoparticles

    Jin Hyung Jun;Byoungjun Park;Kyoungah Cho;Sangsig Kim

  • Triangular gallium nitride nanorods

    Seung Yong Bae;Hee Won Seo;Jeunghee Park;Hyunik Yang

  • Ga2O3 nanomaterials synthesized from ball-milled GaN powders

    Jong Soo Lee;Kwangsue Park;Sahn Nahm;Soo Won Kim

  • Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO

    Kyoungwon Kim;Kyoungwon Kim;Yong Won Song;Seongpil Chang;In Ho Kim

  • Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(1 0 0) substrate

    Jong Su Lee;Myung Il Kang;Sangsig Kim;Min Sang Lee

  • A novel tiny ultrasonic linear motor using the radial mode of a bimorph

    Hyun Phill Ko;Hyun Phill Ko;Sangsig Kim;Sergjus N. Borodinas;Sergjus N. Borodinas;Piotr E. Vasiljev

  • Top-Down Fabrication of Fully CMOS-Compatible Silicon Nanowire Arrays and Their Integration into CMOS Inverters on Plastic

    Myeongwon Lee;Youngin Jeon;Taeho Moon;Sangsig Kim

  • Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles

    Byoungjun Park;Kyoungah Cho;Hyunsuk Kim;Sangsig Kim

  • Wear and dynamic properties of piezoelectric ultrasonic motor with frictional materials coated stator

    Hyun Phill Ko;Hyun Phill Ko;Sangsig Kim;Jin Sang Kim;Hyun Jai Kim

  • Photoluminescence from wurtzite GaN under hydrostatic pressure

    Sangsig Kim;Irving P. Herman;J. A. Tuchman;K. Doverspike

  • Resistance switching memory devices constructed on plastic with solution-processed titanium oxide

    Junggwon Yun;Kyoungah Cho;Byoungjun Park;Bae Ho Park

  • Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

    Jung H. Shin;Se Young Seo;Sangsig Kim;S. G. Bishop

  • Bendable solid-state supercapacitors with Au nanoparticle-embedded graphene hydrogel films.

    Kyungwhan Yang;Kyoungah Cho;Dae Sung Yoon;Sangsig Kim

  • Integrable single walled carbon nanotube (SWNT) network based thin film transistors using roll-to-roll gravure and inkjet

    Jinsoo Noh;Minhun Jung;Kyunghwan Jung;Gwangyong Lee

Frequent Co-Authors

Jong-Soo Lee
Jong-Soo Lee Daegu Gyeongbuk Institute of Science and Technology
Sungwoo Hwang
Sungwoo Hwang Samsung (South Korea)
Irving P. Herman
Irving P. Herman Columbia University
Jeunghee Park
Jeunghee Park Korea University
Chong-Yun Kang
Chong-Yun Kang Korea Institute of Science and Technology
Gyu Tae Kim
Gyu Tae Kim Korea University
Jinsoo Joo
Jinsoo Joo Korea University
Sung Hyun Kim
Sung Hyun Kim Korea University
Sang Yeol Lee
Sang Yeol Lee Yonsei University
Young Keun Kim
Young Keun Kim Korea University

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