World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5794
World Ranking
4736
National Ranking
1661

Theodore W. Houston publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Theodore W. Houston sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 223 publications — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Theodore W. Houston D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Theodore W. Houston sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Integrated circuit
  • Electrical engineering

His primary scientific interests are in Transistor, Electronic engineering, Electrical engineering, Voltage and Static random-access memory. Theodore W. Houston combines subjects such as Optoelectronics, Integrated circuit and Silicon on insulator with his study of Transistor. The concepts of his Electronic engineering study are interwoven with issues in Signal and State.

Many of his studies on Electrical engineering apply to Body region as well. His Memory cell and Node study in the realm of Voltage interacts with subjects such as Mode and Block cipher mode of operation. His Static random-access memory study integrates concerns from other disciplines, such as Sleep mode, Voltage controller, Sram cell, Line and Reading.

His most cited work include:

  • Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device (159 citations)
  • Comprehensive logic circuit layout system (128 citations)
  • Area efficient implementation of small blocks in an SRAM array (127 citations)

What are the main themes of his work throughout his whole career to date?

Theodore W. Houston spends much of his time researching Electrical engineering, Electronic engineering, Transistor, Optoelectronics and Static random-access memory. His Electrical engineering study frequently draws connections between adjacent fields such as Body region. The various areas that he examines in his Electronic engineering study include Biasing, Voltage, Signal and Reading.

His Transistor study incorporates themes from Dram, Node and Integrated circuit. Theodore W. Houston has researched Optoelectronics in several fields, including Layer and Gate oxide. His biological study spans a wide range of topics, including Bit cell, Sram cell and Line.

He most often published in these fields:

  • Electrical engineering (43.50%)
  • Electronic engineering (41.06%)
  • Transistor (39.84%)

What were the highlights of his more recent work (between 2006-2014)?

  • Integrated circuit (26.42%)
  • Static random-access memory (27.64%)
  • Electronic engineering (41.06%)

In recent papers he was focusing on the following fields of study:

His main research concerns Integrated circuit, Static random-access memory, Electronic engineering, Transistor and Sram cell. Electrical engineering and Optoelectronics are the subject areas of his Integrated circuit study. Theodore W. Houston regularly links together related areas like Body region in his Electrical engineering studies.

His Static random-access memory research is under the purview of Computer hardware. His Electronic engineering research is multidisciplinary, incorporating perspectives in Bit cell, Structure, Biasing, Voltage and Reading. His Transistor research incorporates themes from Characterization and Logic gate.

Between 2006 and 2014, his most popular works were:

  • Memory cell layout structure with outer bitline (33 citations)
  • Universal structure for memory cell characterization (23 citations)
  • Sram bias for read and write (22 citations)

Best Publications

  • Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device

    Theodore W. Houston;Keith A. Joyner

  • Comprehensive logic circuit layout system

    Ching-Hao Shaw;Patrick Bosshart;Douglas Matzke;Vibhu Kalyan

  • Area efficient implementation of small blocks in an SRAM array

    Theodore W. Houston;David Barry Scott;Sudha Thiruvengadam

  • SOI DRAM having P-doped poly gate for a memory pass transistor

    Theodore W. Houston

  • Double pattern and etch of poly with hard mask

    Theodore W. Houston;Robert A. Soper;Thomas J. Aton

  • Means for forming SOI

    Theodore W. Houston;Keith A. Joyner

  • 8t sram cell with higher voltage on the read wl

    Theodore Warren Houston

  • Selective power to memory

    Theodore W. Houston

  • Soi field effect transistor

    Theodore W Houston;Gordon P Pollack;ピー.ポラツク ゴードン;ダブリユ.ヒユーストン セオドアー

  • Memory with storage cells having SOI drive and access transistors with tied floating body connections

    Theodore W. Houston;Patrick W. Bosshart

  • Multi-gate one-transistor dynamic random access memory

    Theodore Houston

  • Staggered memory cell array

    Kayvan Sadra;Theodore W. Houston

  • SRAM device and a method of operating the same to reduce leakage current during a sleep mode

    Theodore W. Houston

  • SRAM device and a method of powering-down the same

    Xiaowei Deng;Theodore W. Houston

  • System and method for reducing power dissipation in a circuit

    Theodore W. Houston

  • Model for CMOS/SOI single-event vulnerability

    S.E. Kerns;L.W. Massengill;D.V. Kerns;M.L. Alles

  • Single event upset hardened memory cell

    Terence G. W. Blake;Theodore W. Houston

  • Pulse generator circuit and method

    Theodore W. Houston

  • Memory circuit with extended valid data output time

    Theodore W. Houston

  • Memory circuits, systems, and methods with cells using back bias to control the threshold voltage of one or more corresponding cell transistors

    Theodore W. Houston

Frequent Co-Authors

Amitava Chatterjee
Amitava Chatterjee Texas Instruments (United States)
Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas
Manuel Quevedo-Lopez
Manuel Quevedo-Lopez The University of Texas at Dallas

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