World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
5794
World Ranking
4736
National Ranking
1660

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Integrated circuit
  • Electrical engineering

His primary scientific interests are in Transistor, Electronic engineering, Electrical engineering, Voltage and Static random-access memory. Theodore W. Houston combines subjects such as Optoelectronics, Integrated circuit and Silicon on insulator with his study of Transistor. The concepts of his Electronic engineering study are interwoven with issues in Signal and State.

Many of his studies on Electrical engineering apply to Body region as well. His Memory cell and Node study in the realm of Voltage interacts with subjects such as Mode and Block cipher mode of operation. His Static random-access memory study integrates concerns from other disciplines, such as Sleep mode, Voltage controller, Sram cell, Line and Reading.

His most cited work include:

  • Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device (159 citations)
  • Comprehensive logic circuit layout system (128 citations)
  • Area efficient implementation of small blocks in an SRAM array (127 citations)

What are the main themes of his work throughout his whole career to date?

Theodore W. Houston spends much of his time researching Electrical engineering, Electronic engineering, Transistor, Optoelectronics and Static random-access memory. His Electrical engineering study frequently draws connections between adjacent fields such as Body region. The various areas that he examines in his Electronic engineering study include Biasing, Voltage, Signal and Reading.

His Transistor study incorporates themes from Dram, Node and Integrated circuit. Theodore W. Houston has researched Optoelectronics in several fields, including Layer and Gate oxide. His biological study spans a wide range of topics, including Bit cell, Sram cell and Line.

He most often published in these fields:

  • Electrical engineering (43.50%)
  • Electronic engineering (41.06%)
  • Transistor (39.84%)

What were the highlights of his more recent work (between 2006-2014)?

  • Integrated circuit (26.42%)
  • Static random-access memory (27.64%)
  • Electronic engineering (41.06%)

In recent papers he was focusing on the following fields of study:

His main research concerns Integrated circuit, Static random-access memory, Electronic engineering, Transistor and Sram cell. Electrical engineering and Optoelectronics are the subject areas of his Integrated circuit study. Theodore W. Houston regularly links together related areas like Body region in his Electrical engineering studies.

His Static random-access memory research is under the purview of Computer hardware. His Electronic engineering research is multidisciplinary, incorporating perspectives in Bit cell, Structure, Biasing, Voltage and Reading. His Transistor research incorporates themes from Characterization and Logic gate.

Between 2006 and 2014, his most popular works were:

  • Memory cell layout structure with outer bitline (33 citations)
  • Universal structure for memory cell characterization (23 citations)
  • Sram bias for read and write (22 citations)

Best Publications

  • Semiconductor device with fully self-aligned local interconnects, and method for fabricating the device

    Theodore W. Houston;Keith A. Joyner

  • Comprehensive logic circuit layout system

    Ching-Hao Shaw;Patrick Bosshart;Douglas Matzke;Vibhu Kalyan

  • Area efficient implementation of small blocks in an SRAM array

    Theodore W. Houston;David Barry Scott;Sudha Thiruvengadam

  • SOI DRAM having P-doped poly gate for a memory pass transistor

    Theodore W. Houston

  • Double pattern and etch of poly with hard mask

    Theodore W. Houston;Robert A. Soper;Thomas J. Aton

  • Means for forming SOI

    Theodore W. Houston;Keith A. Joyner

  • 8t sram cell with higher voltage on the read wl

    Theodore Warren Houston

  • Selective power to memory

    Theodore W. Houston

  • Soi field effect transistor

    Theodore W Houston;Gordon P Pollack;ピー.ポラツク ゴードン;ダブリユ.ヒユーストン セオドアー

  • Memory with storage cells having SOI drive and access transistors with tied floating body connections

    Theodore W. Houston;Patrick W. Bosshart

  • Multi-gate one-transistor dynamic random access memory

    Theodore Houston

  • Staggered memory cell array

    Kayvan Sadra;Theodore W. Houston

  • SRAM device and a method of operating the same to reduce leakage current during a sleep mode

    Theodore W. Houston

  • SRAM device and a method of powering-down the same

    Xiaowei Deng;Theodore W. Houston

  • System and method for reducing power dissipation in a circuit

    Theodore W. Houston

  • Model for CMOS/SOI single-event vulnerability

    S.E. Kerns;L.W. Massengill;D.V. Kerns;M.L. Alles

  • Single event upset hardened memory cell

    Terence G. W. Blake;Theodore W. Houston

  • Pulse generator circuit and method

    Theodore W. Houston

  • Memory circuit with extended valid data output time

    Theodore W. Houston

  • Memory circuits, systems, and methods with cells using back bias to control the threshold voltage of one or more corresponding cell transistors

    Theodore W. Houston

Frequent Co-Authors

Amitava Chatterjee
Amitava Chatterjee Texas Instruments (United States)
Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas

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