World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
6145
World Ranking
5494
National Ranking
1886

Hisashi Shichijo publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hisashi Shichijo sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 164 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hisashi Shichijo D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hisashi Shichijo sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1992 - IEEE Fellow For contributions to semiconductor memory technology

Overview

Hisashi Shichijo is affiliated with The University of Texas at Dallas in the United States. Their research primarily focuses on semiconductor materials and devices, with emphasis on GaN-based semiconductor devices and related materials. Their work also covers topics related to Ga2O3 and Silicon Carbide semiconductor technologies.

The scientist has published in the fields of Engineering and Physics and Astronomy, with a specialization in subfields such as Electrical and Electronic Engineering, Condensed Matter Physics, and Electronic, Optical and Magnetic Materials.

Recent publications by Hisashi Shichijo include:

  • Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs, 2023, ECS Transactions
  • Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs, 2023, ECS Meeting Abstracts

Frequent co-authors in their research collaborations have been:

  • Abhas Mehta
  • Jungwoo Joh
  • Chang Juck Suh
  • Moon J. Kim

Hisashi Shichijo's research has been published predominantly in the following venues:

  • ECS Transactions
  • ECS Meeting Abstracts

The scientist received the IEEE Fellow award in 1992 for contributions to semiconductor memory technology.

Best Publications

  • Negative differential resistance through real‐space electron transfer

    K. Hess;H. Morkoç;H. Shichijo;B. G. Streetman

  • Band-structure-dependent transport and impact ionization in GaAs

    H. Shichijo;K. Hess

  • Anomalous leakage current in LPCVD PolySilicon MOSFET's

    J.G. Fossum;A. Ortiz-Conde;H. Shichijo;S.K. Banerjee

  • Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

    J. W. Lee;H. Shichijo;H. L. Tsai;R. J. Matyi

  • Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel

    Ruonan Han;Yaming Zhang;Youngwan Kim;Dae Yeon Kim

  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

    S.D.S. Malhi;H. Shichijo;S.K. Banerjee;R. Sundaresan

  • Epitaxial layer on a heterointerface

    Hisashi Shichijo;Richard J. Matyi

  • A trench transistor cross-point DRAM cell

    W.F. Richardson;D.M. Bordelon;G.P. Pollack;A.H. Shah

  • A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

    D.B. Scott;W.R. Hunter;H. Shichijo

  • Device and technology evolution for Si-based RF integrated circuits

    H.S. Bennett;R. Brederlow;J.C. Costa;P.E. Cottrell

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • dRAM cell and method

    Richard H. Womack;Sanjay K. Banerjee;Hisashi Shichijo;Satwinder Malhi

  • High-voltage drain extended MOS transistors for 0.18-/spl mu/m logic CMOS process

    J.C. Mitros;Chin-Yu Tsai;H. Shichijo;M. Kunz

  • Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

    G.P. Pollack;W.F. Richardson;S.D.S. Malhi;T. Bonifield

  • RF CMOS on high-resistivity substrates for system-on-chip applications

    K. Benaissa;Jau-Yuann Yang;D. Crenshaw;B. Williams

  • Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

    D. G. Deppe;N. Holonyak;D. W. Nam;K. C. Hsieh

  • A 4-Mbit DRAM with trench-transistor cell

    A.H. Shah;C. Wang;R.H. Womack;J.D. Gallia

  • A 4Mb DRAM with cross point trench transistor cell

    A. Shah;Chu-Ping Wang;R. Womack;J. Gallia

  • Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1-xAs heterojunction layers

    M. Keever;H. Shichijo;K. Hess;Sanjay K Banerjee

  • Monte Carlo simulation of real‐space electron transfer in GaAs‐AlGaAs heterostructures

    T. H. Glisson;J. R. Hauser;M. A. Littlejohn;K. Hess

  • Co-integration of GaAs MESFET and Si CMOS circuits

    H. Shichijo;R.J. Matyi;A.H. Taddiken

Frequent Co-Authors

N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Satwinder Malhi
Satwinder Malhi Texas Instruments (United States)
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Dennis G. Deppe
Dennis G. Deppe University of Central Florida
Amitava Chatterjee
Amitava Chatterjee Texas Instruments (United States)
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
Ehsan Afshari
Ehsan Afshari University of Michigan–Ann Arbor
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Theodore W. Houston
Theodore W. Houston Texas Instruments (United States)

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