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Hisashi Shichijo

Hisashi Shichijo

The University of Texas at Dallas
United States

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name Citations Publications World Ranking National Ranking

Electronics and Electrical Engineering D-index 33 Citations 5,380 154 World Ranking 4136 National Ranking 1560

Research.com Recognitions

Awards & Achievements

1992 - IEEE Fellow For contributions to semiconductor memory technology

Overview

What are the main themes of his work throughout his whole career to date

Hisashi Shichijo conducts interdisciplinary study in the fields of Quantum mechanics and Statistical physics through his research. Hisashi Shichijo incorporates Statistical physics and Quantum mechanics in his research. His Optoelectronics study frequently links to adjacent areas such as Semiconductor materials. Semiconductor materials connects with themes related to Optoelectronics in his study. Hisashi Shichijo undertakes multidisciplinary investigations into Condensed matter physics and Semiconductor in his work. He undertakes multidisciplinary investigations into Semiconductor and Condensed matter physics in his work. In his research, Hisashi Shichijo performs multidisciplinary study on Laser and Quantum well. In his articles, Hisashi Shichijo combines various disciplines, including Quantum well and Laser. His research links Method of moments (probability theory) with Estimator.

Hisashi Shichijo most often published in these fields:

Quantum mechanics (100.00%)
Optoelectronics (50.00%)
Condensed matter physics (50.00%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Negative differential resistance through real‐space electron transfer

K. Hess;H. Morkoç;H. Shichijo;B. G. Streetman.
Applied Physics Letters (1979)

404 Citations

Band-structure-dependent transport and impact ionization in GaAs

H. Shichijo;K. Hess.
Physical Review B (1981)

392 Citations

Anomalous leakage current in LPCVD PolySilicon MOSFET's

J.G. Fossum;A. Ortiz-Conde;H. Shichijo;S.K. Banerjee.
IEEE Transactions on Electron Devices (1985)

342 Citations

Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

J. W. Lee;H. Shichijo;H. L. Tsai;R. J. Matyi.
Applied Physics Letters (1987)

284 Citations

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

S.D.S. Malhi;H. Shichijo;S.K. Banerjee;R. Sundaresan.
IEEE Transactions on Electron Devices (1985)

241 Citations

Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel

Ruonan Han;Yaming Zhang;Youngwan Kim;Dae Yeon Kim.
IEEE Journal of Solid-state Circuits (2013)

221 Citations

Epitaxial layer on a heterointerface

Hisashi Shichijo;Richard J. Matyi.
(1993)

177 Citations

A trench transistor cross-point DRAM cell

W.F. Richardson;D.M. Bordelon;G.P. Pollack;A.H. Shah.
international electron devices meeting (1985)

167 Citations

Carrier collection in a semiconductor quantum well

H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis.
Solid State Communications (1978)

156 Citations

A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

D.B. Scott;W.R. Hunter;H. Shichijo.
IEEE Transactions on Electron Devices (1982)

155 Citations

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Frequent Co-Authors

External Links

Personal Website for Hisashi Shichijo