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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
6145
World Ranking
5494
National Ranking
1885

Research.com Recognitions

  • 1992 - IEEE Fellow For contributions to semiconductor memory technology

Overview

Hisashi Shichijo is affiliated with The University of Texas at Dallas in the United States. Their research primarily focuses on semiconductor materials and devices, with emphasis on GaN-based semiconductor devices and related materials. Their work also covers topics related to Ga2O3 and Silicon Carbide semiconductor technologies.

The scientist has published in the fields of Engineering and Physics and Astronomy, with a specialization in subfields such as Electrical and Electronic Engineering, Condensed Matter Physics, and Electronic, Optical and Magnetic Materials.

Recent publications by Hisashi Shichijo include:

  • Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs, 2023, ECS Transactions
  • Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs, 2023, ECS Meeting Abstracts

Frequent co-authors in their research collaborations have been:

  • Abhas Mehta
  • Jungwoo Joh
  • Chang Juck Suh
  • Moon J. Kim

Hisashi Shichijo's research has been published predominantly in the following venues:

  • ECS Transactions
  • ECS Meeting Abstracts

The scientist received the IEEE Fellow award in 1992 for contributions to semiconductor memory technology.

Best Publications

  • Negative differential resistance through real‐space electron transfer

    K. Hess;H. Morkoç;H. Shichijo;B. G. Streetman

  • Band-structure-dependent transport and impact ionization in GaAs

    H. Shichijo;K. Hess

  • Anomalous leakage current in LPCVD PolySilicon MOSFET's

    J.G. Fossum;A. Ortiz-Conde;H. Shichijo;S.K. Banerjee

  • Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

    J. W. Lee;H. Shichijo;H. L. Tsai;R. J. Matyi

  • Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel

    Ruonan Han;Yaming Zhang;Youngwan Kim;Dae Yeon Kim

  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

    S.D.S. Malhi;H. Shichijo;S.K. Banerjee;R. Sundaresan

  • Epitaxial layer on a heterointerface

    Hisashi Shichijo;Richard J. Matyi

  • A trench transistor cross-point DRAM cell

    W.F. Richardson;D.M. Bordelon;G.P. Pollack;A.H. Shah

  • A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

    D.B. Scott;W.R. Hunter;H. Shichijo

  • Device and technology evolution for Si-based RF integrated circuits

    H.S. Bennett;R. Brederlow;J.C. Costa;P.E. Cottrell

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • dRAM cell and method

    Richard H. Womack;Sanjay K. Banerjee;Hisashi Shichijo;Satwinder Malhi

  • High-voltage drain extended MOS transistors for 0.18-/spl mu/m logic CMOS process

    J.C. Mitros;Chin-Yu Tsai;H. Shichijo;M. Kunz

  • Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

    G.P. Pollack;W.F. Richardson;S.D.S. Malhi;T. Bonifield

  • RF CMOS on high-resistivity substrates for system-on-chip applications

    K. Benaissa;Jau-Yuann Yang;D. Crenshaw;B. Williams

  • Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

    D. G. Deppe;N. Holonyak;D. W. Nam;K. C. Hsieh

  • A 4-Mbit DRAM with trench-transistor cell

    A.H. Shah;C. Wang;R.H. Womack;J.D. Gallia

  • A 4Mb DRAM with cross point trench transistor cell

    A. Shah;Chu-Ping Wang;R. Womack;J. Gallia

  • Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1-xAs heterojunction layers

    M. Keever;H. Shichijo;K. Hess;Sanjay K Banerjee

  • Monte Carlo simulation of real‐space electron transfer in GaAs‐AlGaAs heterostructures

    T. H. Glisson;J. R. Hauser;M. A. Littlejohn;K. Hess

  • Co-integration of GaAs MESFET and Si CMOS circuits

    H. Shichijo;R.J. Matyi;A.H. Taddiken

Frequent Co-Authors

N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Satwinder Malhi
Satwinder Malhi Texas Instruments (United States)
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Dennis G. Deppe
Dennis G. Deppe University of Central Florida
Amitava Chatterjee
Amitava Chatterjee Texas Instruments (United States)
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
Ehsan Afshari
Ehsan Afshari University of Michigan–Ann Arbor
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Theodore W. Houston
Theodore W. Houston Texas Instruments (United States)

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