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Ruonan Han

Ruonan Han

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3083
World Ranking
6677
National Ranking
2172

Overview

Ruonan Han is affiliated with MIT in the United States and specializes in engineering, with a focus on electrical and electronic engineering. Their body of work extends into subfields such as atomic and molecular physics, materials chemistry, aerospace engineering, and biomedical engineering.

Their research primarily encompasses topics including radio frequency integrated circuit design, microwave engineering and waveguides, diamond and carbon-based materials research, full-duplex wireless communications, terahertz technology and applications, advanced power amplifier design, and atomic and subatomic physics research.

Ruonan Han has published extensively, contributing significantly to the following venues:

  • IEEE Journal of Solid-State Circuits
  • 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • arXiv (Cornell University)
  • IEEE Transactions on Circuits and Systems I Regular Papers
  • IEEE Transactions on Quantum Engineering

Notable recent papers include:

  • "A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture" (2020, IEEE Journal of Solid-State Circuits)
  • "Emerging Terahertz Integrated Systems in Silicon" (2021, IEEE Transactions on Circuits and Systems I Regular Papers)
  • "High-Scalability CMOS Quantum Magnetometer With Spin-State Excitation and Detection of Diamond Color Centers" (2020, IEEE Journal of Solid-State Circuits)
  • "A High-Efficiency 142-182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique" (2021, IEEE Journal of Solid-State Circuits)
  • "Electronic THz Pencil Beam Forming and 2D Steering for High Angular-Resolution Operation: A 98 × 98-Unit 265GHz CMOS Reflectarray with In-Unit Digital Beam Shaping and Squint Correction" (2022, 2022 IEEE International Solid-State Circuits Conference (ISSCC))

Frequent collaborators include Mohamed I. Ibrahim, Xibi Chen, Xiang Yi, Muhammad Ibrahim Wasiq Khan, and Dirk Englund.

Best Publications

  • Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel

    Ruonan Han;Yaming Zhang;Youngwan Kim;Dae Yeon Kim

  • A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy

    Ruonan Han;Ehsan Afshari

  • A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS

    Ruonan Han;Yaming Zhang;D. Coquillat;H. Videlier

  • CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensor

    Donggyu Kim;Mohamed I. Ibrahim;Christopher Foy;Matthew E. Trusheim

  • A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

    Ruonan Han;Chen Jiang;Ali Mostajeran;Mohammad Emadi

  • A CMOS-integrated quantum sensor based on nitrogen–vacancy centres

    Donggyu Kim;Mohamed I. Ibrahim;Christopher C. Foy;Matthew E Trusheim

  • Progress and Challenges Towards Terahertz CMOS Integrated Circuits

    Eunyoung Seok;Dongha Shim;Chuying Mao;Ruonan Han

  • A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS

    Chen Jiang;Ali Mostajeran;Ruonan Han;Mohammad Emadi

  • A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

    Xiang Yi;Cheng Wang;Xibi Chen;Jinchen Wang

  • Opening Terahertz for Everyday Applications

    Kenneth K. O;Wooyeol Choi;Qian Zhong;Navneet Sharma

  • Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging

    Dae Yeon Kim;Shinwoong Park;Ruonan Han;Kenneth K. O

  • Towards terahertz operation of CMOS

    Swaminathan Sankaran;Chuying Mao;Eunyoung Seok;Dongha Shim

  • Dual-Terahertz-Comb Spectrometer on CMOS for Rapid, Wide-Range Gas Detection With Absolute Specificity

    Cheng Wang;Ruonan Han

  • A 260GHz broadband source with 1.1mW continuous-wave radiated power and EIRP of 15.7dBm in 65nm CMOS

    Ruonan Han;E. Afshari

  • A Fully Integrated Broadband Sub-mmWave Chip-to-Chip Interconnect

    Jack W. Holloway;Luciano Boglione;Timothy M. Hancock;Ruonan Han

  • Erratum to “High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure”

    Zhi Hu;Mehmet Kaynak;Ruonan Han

  • Filling the Gap: Silicon Terahertz Integrated Circuits Offer Our Best Bet

    Ruonan Han;Zhi Hu;Cheng Wang;Jack Holloway

  • Emerging Terahertz Integrated Systems in Silicon

    Xiang Yi;Cheng Wang;Zhi Hu;Jack W. Holloway

  • Innovations in Terahertz Interconnects: High-Speed Data Transport Over Fully Electrical Terahertz Waveguide Links

    Jack W. Holloway;Georgios C. Dogiamis;Ruonan Han

  • 25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems

    Ruonan Han;Chen Jiang;Ali Mostajeran;Mohammad Emadi

  • 280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS

    Ruonan Han;Yaming Zhang;Youngwan Kim;Dae Yeon Kim

  • 280-GHz schottky diode detector in 130-nm digital CMOS

    Ruonan Han;Yaming Zhang;Dominique Coquillat;Julie Hoy

  • CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensor

    Christopher Foy;Mohamed Ibrahim;Donggyu Kim;Matthew Trusheim

Frequent Co-Authors

Ehsan Afshari
Ehsan Afshari University of Michigan–Ann Arbor
Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas
Andreia Cathelin
Andreia Cathelin STMicroelectronics (Switzerland)
Elliott R. Brown
Elliott R. Brown Wright State University
Chih-Ming Hung
Chih-Ming Hung MediaTek (Taiwan)
Zhenghe Feng
Zhenghe Feng Tsinghua University

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