World's Best Scientists 2026 revealed!
Ruonan Han

Ruonan Han

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3083
World Ranking
6676
National Ranking
2173

Ruonan Han publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ruonan Han sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 86 publications — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ruonan Han D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ruonan Han sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 31 D-Index — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ruonan Han is affiliated with MIT in the United States and specializes in engineering, with a focus on electrical and electronic engineering. Their body of work extends into subfields such as atomic and molecular physics, materials chemistry, aerospace engineering, and biomedical engineering.

Their research primarily encompasses topics including radio frequency integrated circuit design, microwave engineering and waveguides, diamond and carbon-based materials research, full-duplex wireless communications, terahertz technology and applications, advanced power amplifier design, and atomic and subatomic physics research.

Ruonan Han has published extensively, contributing significantly to the following venues:

  • IEEE Journal of Solid-State Circuits
  • 2022 IEEE International Solid-State Circuits Conference (ISSCC)
  • arXiv (Cornell University)
  • IEEE Transactions on Circuits and Systems I Regular Papers
  • IEEE Transactions on Quantum Engineering

Notable recent papers include:

  • "A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture" (2020, IEEE Journal of Solid-State Circuits)
  • "Emerging Terahertz Integrated Systems in Silicon" (2021, IEEE Transactions on Circuits and Systems I Regular Papers)
  • "High-Scalability CMOS Quantum Magnetometer With Spin-State Excitation and Detection of Diamond Color Centers" (2020, IEEE Journal of Solid-State Circuits)
  • "A High-Efficiency 142-182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique" (2021, IEEE Journal of Solid-State Circuits)
  • "Electronic THz Pencil Beam Forming and 2D Steering for High Angular-Resolution Operation: A 98 × 98-Unit 265GHz CMOS Reflectarray with In-Unit Digital Beam Shaping and Squint Correction" (2022, 2022 IEEE International Solid-State Circuits Conference (ISSCC))

Frequent collaborators include Mohamed I. Ibrahim, Xibi Chen, Xiang Yi, Muhammad Ibrahim Wasiq Khan, and Dirk Englund.

Best Publications

  • Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel

    Ruonan Han;Yaming Zhang;Youngwan Kim;Dae Yeon Kim

  • A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy

    Ruonan Han;Ehsan Afshari

  • A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS

    Ruonan Han;Yaming Zhang;D. Coquillat;H. Videlier

  • CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensor

    Donggyu Kim;Mohamed I. Ibrahim;Christopher Foy;Matthew E. Trusheim

  • A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop

    Ruonan Han;Chen Jiang;Ali Mostajeran;Mohammad Emadi

  • A CMOS-integrated quantum sensor based on nitrogen–vacancy centres

    Donggyu Kim;Mohamed I. Ibrahim;Christopher C. Foy;Matthew E Trusheim

  • Progress and Challenges Towards Terahertz CMOS Integrated Circuits

    Eunyoung Seok;Dongha Shim;Chuying Mao;Ruonan Han

  • A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS

    Chen Jiang;Ali Mostajeran;Ruonan Han;Mohammad Emadi

  • A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

    Xiang Yi;Cheng Wang;Xibi Chen;Jinchen Wang

  • Opening Terahertz for Everyday Applications

    Kenneth K. O;Wooyeol Choi;Qian Zhong;Navneet Sharma

  • Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging

    Dae Yeon Kim;Shinwoong Park;Ruonan Han;Kenneth K. O

  • Towards terahertz operation of CMOS

    Swaminathan Sankaran;Chuying Mao;Eunyoung Seok;Dongha Shim

  • Dual-Terahertz-Comb Spectrometer on CMOS for Rapid, Wide-Range Gas Detection With Absolute Specificity

    Cheng Wang;Ruonan Han

  • A 260GHz broadband source with 1.1mW continuous-wave radiated power and EIRP of 15.7dBm in 65nm CMOS

    Ruonan Han;E. Afshari

  • A Fully Integrated Broadband Sub-mmWave Chip-to-Chip Interconnect

    Jack W. Holloway;Luciano Boglione;Timothy M. Hancock;Ruonan Han

  • Erratum to “High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure”

    Zhi Hu;Mehmet Kaynak;Ruonan Han

  • Filling the Gap: Silicon Terahertz Integrated Circuits Offer Our Best Bet

    Ruonan Han;Zhi Hu;Cheng Wang;Jack Holloway

  • Emerging Terahertz Integrated Systems in Silicon

    Xiang Yi;Cheng Wang;Zhi Hu;Jack W. Holloway

  • Innovations in Terahertz Interconnects: High-Speed Data Transport Over Fully Electrical Terahertz Waveguide Links

    Jack W. Holloway;Georgios C. Dogiamis;Ruonan Han

  • 25.5 A 320GHz phase-locked transmitter with 3.3mW radiated power and 22.5dBm EIRP for heterodyne THz imaging systems

    Ruonan Han;Chen Jiang;Ali Mostajeran;Mohammad Emadi

  • 280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS

    Ruonan Han;Yaming Zhang;Youngwan Kim;Dae Yeon Kim

  • 280-GHz schottky diode detector in 130-nm digital CMOS

    Ruonan Han;Yaming Zhang;Dominique Coquillat;Julie Hoy

  • CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensor

    Christopher Foy;Mohamed Ibrahim;Donggyu Kim;Matthew Trusheim

Frequent Co-Authors

Ehsan Afshari
Ehsan Afshari University of Michigan–Ann Arbor
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas
Andreia Cathelin
Andreia Cathelin STMicroelectronics (Switzerland)
Elliott R. Brown
Elliott R. Brown Wright State University
Chih-Ming Hung
Chih-Ming Hung MediaTek (Taiwan)
David B. Tanner
David B. Tanner University of Florida
Stephen Hill
Stephen Hill Florida State University

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