World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
5998
World Ranking
3978
National Ranking
1425

Satwinder Malhi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Satwinder Malhi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 116 publications — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Satwinder Malhi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Satwinder Malhi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Transistor

His primary scientific interests are in Optoelectronics, Electrical engineering, Transistor, Trench and Integrated circuit. His Optoelectronics research integrates issues from Soldering, Epitaxy, Atomic layer deposition, MOSFET and Nitride. His work in the fields of Electrical engineering, such as Insulator and Power semiconductor device, intersects with other areas such as Conductivity.

The various areas that Satwinder Malhi examines in his Trench study include Dram, Substrate and High voltage. His Dram research includes elements of Field-effect transistor, Capacitance, CMOS and Capacitor. His biological study spans a wide range of topics, including Computer hardware, Electronic engineering, Chip and Wafer testing.

His most cited work include:

  • Full wafer integrated circuit testing device (233 citations)
  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon (226 citations)
  • Flip-chip test socket adaptor and method (202 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Electrical engineering, Transistor, Electronic engineering and Layer. His work deals with themes such as Field-effect transistor and Substrate, which intersect with Optoelectronics. His research combines Doping and Electrical engineering.

His Transistor study combines topics from a wide range of disciplines, such as Trench and Capacitor. His work in Trench addresses issues such as Dram, which are connected to fields such as Capacitance. Satwinder Malhi has researched Electronic engineering in several fields, including Composite material, N channel, Polycrystalline silicon and Integrated circuit.

He most often published in these fields:

  • Optoelectronics (61.16%)
  • Electrical engineering (46.28%)
  • Transistor (33.06%)

What were the highlights of his more recent work (between 1994-2002)?

  • Electrical engineering (46.28%)
  • Transistor (33.06%)
  • Optoelectronics (61.16%)

In recent papers he was focusing on the following fields of study:

His main research concerns Electrical engineering, Transistor, Optoelectronics, Electronic engineering and Layer. His Electrical engineering study frequently links to adjacent areas such as Substrate. Transistor is the subject of his research, which falls under Voltage.

His Optoelectronics study which covers Power semiconductor device that intersects with Trench and Semiconductor device. Satwinder Malhi focuses mostly in the field of Electronic engineering, narrowing it down to topics relating to Silicon and, in certain cases, NAND gate and Memory cell. The Layer study combines topics in areas such as Semiconductor and Conductor.

Between 1994 and 2002, his most popular works were:

  • Top-drain trench based resurf DMOS transistor structure (170 citations)
  • Compact foldable keyboard (107 citations)
  • Low profile keyboard (64 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Transistor

Satwinder Malhi mainly focuses on Electrical engineering, Computer hardware, Silicon, Electronic circuit and Substrate. The concepts of his Electrical engineering study are interwoven with issues in Battery and Battery charger. His Computer hardware study integrates concerns from other disciplines, such as Mechanism, Hinge and Spring.

His Silicon study combines topics in areas such as Control circuit, Substrate coupling, High voltage and Static random-access memory. Satwinder Malhi combines subjects such as Trench, Electrical isolation, Optoelectronics, Dielectric and Power semiconductor device with his study of Substrate. His research in Electronic engineering intersects with topics in Electrical conductor, Composite material and Graphite.

Best Publications

  • Full wafer integrated circuit testing device

    Oh-Kyong Kwon;Masashi Hashimoto;Satwinder Malhi;Eng C. Born

  • Flip-chip test socket adaptor and method

    Satwinder Malhi;Oh K. Kwon;Shivaling S. Mahant-Shetti

  • Top-drain trench based resurf DMOS transistor structure

    Satwinder Malhi

  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

    S.D.S. Malhi;H. Shichijo;S.K. Banerjee;R. Sundaresan

  • Method of forming a semiconductor device including a trench

    Satwinder Malhi

  • DRAM Cell with trench capacitor and vertical channel in substrate

    Pallab K. Chatterjee;Satwinder Malhi;William F. Richardson

  • A trench transistor cross-point DRAM cell

    W.F. Richardson;D.M. Bordelon;G.P. Pollack;A.H. Shah

  • Compact foldable keyboard

    Kenneth E. Coulon;Satwinder D.S. Malhi

  • Method of forming an apparatus for burn in testing of integrated circuit chip

    Satwinder Malhi;Oh-Kyong Kwon

  • dRAM cell and method

    Richard H. Womack;Sanjay K. Banerjee;Hisashi Shichijo;Satwinder Malhi

  • Baseboard for orthogonal chip mount

    Satwinder S. Malhi;Kenneth E. Bean

  • Compliant contact pad

    Oh-Kyong Kwon;Satwinder Malhi;Masahi Hashimoto

  • Method of making DRAM cell with trench capacitor

    William F. Richardson;Satwinder S. Malhi

  • Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

    G.P. Pollack;W.F. Richardson;S.D.S. Malhi;T. Bonifield

  • High performance test head and method of making

    On-Kyong Kwon;Masashi Hashimoto;Satwinder Malhi

  • A 4-Mbit DRAM with trench-transistor cell

    A.H. Shah;C. Wang;R.H. Womack;J.D. Gallia

  • A 4Mb DRAM with cross point trench transistor cell

    A. Shah;Chu-Ping Wang;R. Womack;J. Gallia

  • dRAM cell and array

    Satwinder S. Malhi

  • Low profile keyboard

    Satwinder Malhi;Bruce D. Quinney;Craig A. Fischer

  • Low profile fuel cell

    Satwinder Malhi

Frequent Co-Authors

Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin

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