World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
5998
World Ranking
3978
National Ranking
1424

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Integrated circuit
  • Transistor

His primary scientific interests are in Optoelectronics, Electrical engineering, Transistor, Trench and Integrated circuit. His Optoelectronics research integrates issues from Soldering, Epitaxy, Atomic layer deposition, MOSFET and Nitride. His work in the fields of Electrical engineering, such as Insulator and Power semiconductor device, intersects with other areas such as Conductivity.

The various areas that Satwinder Malhi examines in his Trench study include Dram, Substrate and High voltage. His Dram research includes elements of Field-effect transistor, Capacitance, CMOS and Capacitor. His biological study spans a wide range of topics, including Computer hardware, Electronic engineering, Chip and Wafer testing.

His most cited work include:

  • Full wafer integrated circuit testing device (233 citations)
  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon (226 citations)
  • Flip-chip test socket adaptor and method (202 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Electrical engineering, Transistor, Electronic engineering and Layer. His work deals with themes such as Field-effect transistor and Substrate, which intersect with Optoelectronics. His research combines Doping and Electrical engineering.

His Transistor study combines topics from a wide range of disciplines, such as Trench and Capacitor. His work in Trench addresses issues such as Dram, which are connected to fields such as Capacitance. Satwinder Malhi has researched Electronic engineering in several fields, including Composite material, N channel, Polycrystalline silicon and Integrated circuit.

He most often published in these fields:

  • Optoelectronics (61.16%)
  • Electrical engineering (46.28%)
  • Transistor (33.06%)

What were the highlights of his more recent work (between 1994-2002)?

  • Electrical engineering (46.28%)
  • Transistor (33.06%)
  • Optoelectronics (61.16%)

In recent papers he was focusing on the following fields of study:

His main research concerns Electrical engineering, Transistor, Optoelectronics, Electronic engineering and Layer. His Electrical engineering study frequently links to adjacent areas such as Substrate. Transistor is the subject of his research, which falls under Voltage.

His Optoelectronics study which covers Power semiconductor device that intersects with Trench and Semiconductor device. Satwinder Malhi focuses mostly in the field of Electronic engineering, narrowing it down to topics relating to Silicon and, in certain cases, NAND gate and Memory cell. The Layer study combines topics in areas such as Semiconductor and Conductor.

Between 1994 and 2002, his most popular works were:

  • Top-drain trench based resurf DMOS transistor structure (170 citations)
  • Compact foldable keyboard (107 citations)
  • Low profile keyboard (64 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Integrated circuit
  • Transistor

Satwinder Malhi mainly focuses on Electrical engineering, Computer hardware, Silicon, Electronic circuit and Substrate. The concepts of his Electrical engineering study are interwoven with issues in Battery and Battery charger. His Computer hardware study integrates concerns from other disciplines, such as Mechanism, Hinge and Spring.

His Silicon study combines topics in areas such as Control circuit, Substrate coupling, High voltage and Static random-access memory. Satwinder Malhi combines subjects such as Trench, Electrical isolation, Optoelectronics, Dielectric and Power semiconductor device with his study of Substrate. His research in Electronic engineering intersects with topics in Electrical conductor, Composite material and Graphite.

Best Publications

  • Full wafer integrated circuit testing device

    Oh-Kyong Kwon;Masashi Hashimoto;Satwinder Malhi;Eng C. Born

  • Flip-chip test socket adaptor and method

    Satwinder Malhi;Oh K. Kwon;Shivaling S. Mahant-Shetti

  • Top-drain trench based resurf DMOS transistor structure

    Satwinder Malhi

  • Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

    S.D.S. Malhi;H. Shichijo;S.K. Banerjee;R. Sundaresan

  • Method of forming a semiconductor device including a trench

    Satwinder Malhi

  • DRAM Cell with trench capacitor and vertical channel in substrate

    Pallab K. Chatterjee;Satwinder Malhi;William F. Richardson

  • A trench transistor cross-point DRAM cell

    W.F. Richardson;D.M. Bordelon;G.P. Pollack;A.H. Shah

  • Compact foldable keyboard

    Kenneth E. Coulon;Satwinder D.S. Malhi

  • Method of forming an apparatus for burn in testing of integrated circuit chip

    Satwinder Malhi;Oh-Kyong Kwon

  • dRAM cell and method

    Richard H. Womack;Sanjay K. Banerjee;Hisashi Shichijo;Satwinder Malhi

  • Baseboard for orthogonal chip mount

    Satwinder S. Malhi;Kenneth E. Bean

  • Compliant contact pad

    Oh-Kyong Kwon;Satwinder Malhi;Masahi Hashimoto

  • Method of making DRAM cell with trench capacitor

    William F. Richardson;Satwinder S. Malhi

  • Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

    G.P. Pollack;W.F. Richardson;S.D.S. Malhi;T. Bonifield

  • High performance test head and method of making

    On-Kyong Kwon;Masashi Hashimoto;Satwinder Malhi

  • A 4-Mbit DRAM with trench-transistor cell

    A.H. Shah;C. Wang;R.H. Womack;J.D. Gallia

  • A 4Mb DRAM with cross point trench transistor cell

    A. Shah;Chu-Ping Wang;R. Womack;J. Gallia

  • dRAM cell and array

    Satwinder S. Malhi

  • Low profile keyboard

    Satwinder Malhi;Bruce D. Quinney;Craig A. Fischer

  • Low profile fuel cell

    Satwinder Malhi

Frequent Co-Authors

Hisashi Shichijo
Hisashi Shichijo The University of Texas at Dallas
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin

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