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H. Jim Fulford

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 50 2871 2754 1083 1011 221 6511
Materials Science 50 10360 10004 2460 2282 229 6663

H. Jim Fulford publications per year

The chart shows the history of publications by H. Jim Fulford between 1995 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. H. Jim Fulford published across 27 years, from 1995 to 2021, averaging 8.7 papers a year. Output peaked at 70 publications in 1997. 13 of the 235 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1995 to 2021. Vertical axis: number of publications, 0 to 70. Peak 70 publications in 1997. 1995: 2 publications 1996: 41 publications 1997: 70 publications 1998: 66 publications 1999: 30 publications 2000: 8 publications 2001: 3 publications 2002: 1 publication 2003: 0 publications 2004: 0 publications 2005: 0 publications 2006: 0 publications 2007: 0 publications 2008: 1 publication 2009: 0 publications 2010: 0 publications 2011: 0 publications 2012: 0 publications 2013: 0 publications 2014: 0 publications 2015: 0 publications 2016: 0 publications 2017: 0 publications 2018: 0 publications 2019: 0 publications 2020: 2 publications 2021: 11 publications
1995 2021

235 publications in total across all disciplines

View publications per year as a table
H. Jim Fulford: publications per year, 1995 to 2021
Year Publications
1995 2
1996 41
1997 70
1998 66
1999 30
2000 8
2001 3
2002 1
2003 0
2004 0
2005 0
2006 0
2007 0
2008 1
2009 0
2010 0
2011 0
2012 0
2013 0
2014 0
2015 0
2016 0
2017 0
2018 0
2019 0
2020 2
2021 11
Total 235
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H. Jim Fulford publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where H. Jim Fulford sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 214–233 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 221 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431 221
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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H. Jim Fulford D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where H. Jim Fulford sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 50 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141 50
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, Dielectric, Gate dielectric and Layer. His studies in Optoelectronics integrate themes in fields like Electrical engineering, Gate oxide and Conductor. The Electronic engineering study combines topics in areas such as Ion implantation, Oxide, Capacitance and Silicon.

His Dielectric research is multidisciplinary, incorporating elements of Substrate, Trench, Semiconductor, Composite material and Deposition. His Gate dielectric research integrates issues from High-κ dielectric, Semiconductor device, Dielectric layer and Permittivity. In the subject of general Layer, his work in Polysilicon depletion effect and Photoresist is often linked to Communication channel, thereby combining diverse domains of study.

His most cited work include:

  • Substantially planar semiconductor topography using dielectrics and chemical mechanical polish (167 citations)
  • Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof (111 citations)
  • Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance (102 citations)

What are the main themes of his work throughout his whole career to date?

H. Jim Fulford spends much of his time researching Optoelectronics, Layer, Substrate, Electronic engineering and Gate oxide. His work carried out in the field of Optoelectronics brings together such families of science as Semiconductor device, Gate dielectric and Electrical engineering. His Layer study integrates concerns from other disciplines, such as Oxide and Masking.

His study focuses on the intersection of Substrate and fields such as Silicon with connections in the field of Wafer and Getter. As part of one scientific family, H. Jim Fulford deals mainly with the area of Electronic engineering, narrowing it down to issues related to the Dopant, and often Annealing and Barrier layer. His work in Dielectric addresses issues such as Semiconductor, which are connected to fields such as Chemical-mechanical planarization.

He most often published in these fields:

  • Optoelectronics (84.82%)
  • Layer (42.41%)
  • Substrate (37.74%)

What were the highlights of his more recent work (between 1998-2021)?

  • Optoelectronics (84.82%)
  • Layer (42.41%)
  • Gate oxide (36.96%)

In recent papers he was focusing on the following fields of study:

H. Jim Fulford mainly focuses on Optoelectronics, Layer, Gate oxide, Electrical engineering and Gate dielectric. His Optoelectronics study combines topics in areas such as Semiconductor device, Substrate, Electronic engineering, Substrate and Conductor. He has researched Substrate in several fields, including High-κ dielectric and Silicon.

As a part of the same scientific study, H. Jim Fulford usually deals with the Gate oxide, concentrating on Oxide and frequently concerns with Doping. His is involved in several facets of Electrical engineering study, as is seen by his studies on Electrical conductor and Integrated circuit. His Gate dielectric research incorporates elements of Drain-induced barrier lowering and Dielectric.

Between 1998 and 2021, his most popular works were:

  • Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit (78 citations)
  • Method of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabrication (68 citations)
  • Method of fabricating a transistor with a dielectric underlayer and device incorporating same (52 citations)

Best Publications

  • Substantially planar semiconductor topography using dielectrics and chemical mechanical polish

    Robert Dawson;Mark W. Michael;Basab Bandyopadhyay;H. Jim Fulford

  • Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof

    Mark I. Gardner;H. Jim Fulford;Charles E. May;Fred Hause

  • Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance

    Mark I. Gardner;Fred N. Hause;H. Jim Fulford

  • A method of forming high pressure silicon oxynitride (oxynitride) gate dielectrics for metal oxide semiconductor (mos) devices with p+ polycrystalline silicon (polysilicon) gate electrodes

    Dirk J. Wristers;H. Jim Fulford;Dim L. Kwong

  • Integrated circuit gate conductor which uses layered spacers to produce a graded junction

    H. Jim Fulford;Mark I. Gardner;Derick J. Wristers

  • Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant

    Mark I. Gardner;H. Jim Fulford;Dim-Lee Kwong

  • Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit

    Mark I. Gardner;H. Jim Fulford

  • Method of formation of an air gap within a semiconductor dielectric by solvent desorption

    H. Jim Fulford;Robert Dawson;Fred N. Hause;Basab Bandyopadhyay

  • Method and apparatus for in situ anneal during ion implant

    Robert Dawson;H. Jim Fulford;Mark I. Gardner;Frederick N. Hause

  • Dissolvable dielectric method and structure

    Fred N. Hause;Basab Bandyopadhyay;Robert Dawson;H. Jim Fulford

  • Method of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabrication

    Mark I. Gardner;H. Jim Fulford;Derick J. Wristers

  • CMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted therein

    Mark I. Gardner;Fred N. Hause;H. Jim Fulford

  • Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric

    Mark I. Gardner;Robert Dawson;H. Jim Fulford;Frederick N. Hause

  • Interlevel dielectric with air gaps to lessen capacitive coupling

    Basab Bandyopadhyay;H. Jim Fulford;Robert Dawson;Fred N. Hause

  • Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor

    Mark I. Gardner;H. Jim Fulford;Derrick J. Wristers

  • Method of channel doping using diffusion from implanted polysilicon

    H. Jim Fulford;Robert Dawson;Mark I. Gardner;Frederick N. Hause

  • Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gate

    Mark I. Gardner;H. Jim Fulford

  • Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance

    Mark I. Gardner;Dim-Lee Kwong;H. Jim Fulford

  • Transistor with buried insulative layer beneath the channel region

    Bradley T. Moore;Robert Dawson;H. Jim Fulford;Mark I. Gardner

  • Ultra thin spacers formed laterally adjacent a gate conductor recessed below the upper surface of a substrate

    Mark I. Gardner;H. Jim Fulford

  • Multilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnect

    Robert Dawson;Mark W. Michael;William S. Brennan;Basab Bandyopadhyay

Frequent Co-Authors

Mark I. Gardner
Mark I. Gardner Micron Technology
Derick J. Wristers
Derick J. Wristers Advanced Micro Devices (United States)

External Links

Personal website of H. Jim Fulford

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Related Online Degrees & Career Pathways

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Career paths in this field also suit a range of personalities, including those who prefer quiet and focused environments. Many introvert jobs that pay well in technology and engineering allow for deep analytical work, making them an excellent match for introverted individuals.

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