World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
50
Citations
6511
World Ranking
2871
National Ranking
1083

Materials Science

D-Index
50
Citations
6663
World Ranking
10360
National Ranking
2460

H. Jim Fulford publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where H. Jim Fulford sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 221 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

H. Jim Fulford D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where H. Jim Fulford sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 50 D-Index — 60th percentile

60% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Electrical engineering

The scientist’s investigation covers issues in Optoelectronics, Electronic engineering, Dielectric, Gate dielectric and Layer. His studies in Optoelectronics integrate themes in fields like Electrical engineering, Gate oxide and Conductor. The Electronic engineering study combines topics in areas such as Ion implantation, Oxide, Capacitance and Silicon.

His Dielectric research is multidisciplinary, incorporating elements of Substrate, Trench, Semiconductor, Composite material and Deposition. His Gate dielectric research integrates issues from High-κ dielectric, Semiconductor device, Dielectric layer and Permittivity. In the subject of general Layer, his work in Polysilicon depletion effect and Photoresist is often linked to Communication channel, thereby combining diverse domains of study.

His most cited work include:

  • Substantially planar semiconductor topography using dielectrics and chemical mechanical polish (167 citations)
  • Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof (111 citations)
  • Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance (102 citations)

What are the main themes of his work throughout his whole career to date?

H. Jim Fulford spends much of his time researching Optoelectronics, Layer, Substrate, Electronic engineering and Gate oxide. His work carried out in the field of Optoelectronics brings together such families of science as Semiconductor device, Gate dielectric and Electrical engineering. His Layer study integrates concerns from other disciplines, such as Oxide and Masking.

His study focuses on the intersection of Substrate and fields such as Silicon with connections in the field of Wafer and Getter. As part of one scientific family, H. Jim Fulford deals mainly with the area of Electronic engineering, narrowing it down to issues related to the Dopant, and often Annealing and Barrier layer. His work in Dielectric addresses issues such as Semiconductor, which are connected to fields such as Chemical-mechanical planarization.

He most often published in these fields:

  • Optoelectronics (84.82%)
  • Layer (42.41%)
  • Substrate (37.74%)

What were the highlights of his more recent work (between 1998-2021)?

  • Optoelectronics (84.82%)
  • Layer (42.41%)
  • Gate oxide (36.96%)

In recent papers he was focusing on the following fields of study:

H. Jim Fulford mainly focuses on Optoelectronics, Layer, Gate oxide, Electrical engineering and Gate dielectric. His Optoelectronics study combines topics in areas such as Semiconductor device, Substrate, Electronic engineering, Substrate and Conductor. He has researched Substrate in several fields, including High-κ dielectric and Silicon.

As a part of the same scientific study, H. Jim Fulford usually deals with the Gate oxide, concentrating on Oxide and frequently concerns with Doping. His is involved in several facets of Electrical engineering study, as is seen by his studies on Electrical conductor and Integrated circuit. His Gate dielectric research incorporates elements of Drain-induced barrier lowering and Dielectric.

Between 1998 and 2021, his most popular works were:

  • Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit (78 citations)
  • Method of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabrication (68 citations)
  • Method of fabricating a transistor with a dielectric underlayer and device incorporating same (52 citations)

Best Publications

  • Substantially planar semiconductor topography using dielectrics and chemical mechanical polish

    Robert Dawson;Mark W. Michael;Basab Bandyopadhyay;H. Jim Fulford

  • Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof

    Mark I. Gardner;H. Jim Fulford;Charles E. May;Fred Hause

  • Integrated circuit having multiple LDD and/or source/drain implant steps to enhance circuit performance

    Mark I. Gardner;Fred N. Hause;H. Jim Fulford

  • A method of forming high pressure silicon oxynitride (oxynitride) gate dielectrics for metal oxide semiconductor (mos) devices with p+ polycrystalline silicon (polysilicon) gate electrodes

    Dirk J. Wristers;H. Jim Fulford;Dim L. Kwong

  • Integrated circuit gate conductor which uses layered spacers to produce a graded junction

    H. Jim Fulford;Mark I. Gardner;Derick J. Wristers

  • Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant

    Mark I. Gardner;H. Jim Fulford;Dim-Lee Kwong

  • Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit

    Mark I. Gardner;H. Jim Fulford

  • Method of formation of an air gap within a semiconductor dielectric by solvent desorption

    H. Jim Fulford;Robert Dawson;Fred N. Hause;Basab Bandyopadhyay

  • Method and apparatus for in situ anneal during ion implant

    Robert Dawson;H. Jim Fulford;Mark I. Gardner;Frederick N. Hause

  • Dissolvable dielectric method and structure

    Fred N. Hause;Basab Bandyopadhyay;Robert Dawson;H. Jim Fulford

  • Method of making disposable channel masking for both source/drain and LDD implant and subsequent gate fabrication

    Mark I. Gardner;H. Jim Fulford;Derick J. Wristers

  • CMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted therein

    Mark I. Gardner;Fred N. Hause;H. Jim Fulford

  • Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric

    Mark I. Gardner;Robert Dawson;H. Jim Fulford;Frederick N. Hause

  • Interlevel dielectric with air gaps to lessen capacitive coupling

    Basab Bandyopadhyay;H. Jim Fulford;Robert Dawson;Fred N. Hause

  • Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor

    Mark I. Gardner;H. Jim Fulford;Derrick J. Wristers

  • Method of channel doping using diffusion from implanted polysilicon

    H. Jim Fulford;Robert Dawson;Mark I. Gardner;Frederick N. Hause

  • Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gate

    Mark I. Gardner;H. Jim Fulford

  • Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance

    Mark I. Gardner;Dim-Lee Kwong;H. Jim Fulford

  • Transistor with buried insulative layer beneath the channel region

    Bradley T. Moore;Robert Dawson;H. Jim Fulford;Mark I. Gardner

  • Ultra thin spacers formed laterally adjacent a gate conductor recessed below the upper surface of a substrate

    Mark I. Gardner;H. Jim Fulford

  • Multilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnect

    Robert Dawson;Mark W. Michael;William S. Brennan;Basab Bandyopadhyay

Frequent Co-Authors

Mark I. Gardner
Mark I. Gardner Micron Technology
Derick J. Wristers
Derick J. Wristers Advanced Micro Devices (United States)

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