World's Best Scientists 2026 revealed!
Masashi Horiguchi

Masashi Horiguchi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3667
World Ranking
6616
National Ranking
287

Masashi Horiguchi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Masashi Horiguchi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 114 publications — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Masashi Horiguchi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Masashi Horiguchi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 31 D-Index — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2010 - IEEE Fellow For contributions to circuit technologies for high-density low-power memories

Overview

Masashi Horiguchi is affiliated with Hitachi in Japan. Their recent research includes work published in the Journal of EMS Medicine, where they contributed a paper titled "Effects of the COVID-19 pandemic and the introduction of information and communication technology in emergency scenes on the emergency transport environment in Japan" in 2024.

Frequent co-authors collaborating with Masashi Horiguchi include:

  • Hideharu Tanaka
  • Hiroshi Takyu
  • Hiroki Ueta
  • Ryo Sagisaka

The primary publication venue for Horiguchi's work is the Journal of EMS Medicine.

In 2010, Masashi Horiguchi was awarded the IEEE Fellow distinction for contributions to circuit technologies for high-density low-power memories.

Best Publications

  • Switched-source-impedance CMOS circuit for low standby subthreshold current giga-scale LSI's

    M. Horiguchi;T. Sakata;K. Itoh

  • Semiconductor memory using multiple level storage structure

    Masakazu Aoki;Yoshinobu Nakagome;Masashi Horiguchi;Shinichi Ikenaga

  • Review and future prospects of low-voltage RAM circuits

    Y. Nakagome;M. Horiguchi;T. Kawahara;K. Itoh

  • Semiconductor memory device and defect remedying method thereof

    Kazuhiko Kajigaya;Kazuyuki Miyazawa;Manabu Tsunozaki;Kazuyoshi Oshima

  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS OPERATION METHOD, ESPECIALLY INCLUDING SERVAL SWITCHING MOSFETS FOR CONTROLLING DRIVING CURRENT SEQUENTLY

    Noda Hiromasa;Aoki Masakazu;Idei Youji;Kajigaya Kazuhiko

  • Memory module including module data wirings available as a memory access data bus

    Seiji Funaba;Yoshinobu Nakagome;Masashi Horiguchi;Yoji Nishio

  • Semiconductor integrated circuits with power reduction mechanism

    Takeshi Sakata;Kiyoo Itoh;Masashi Horiguchi

  • An experimental large-capacity semiconductor file memory using 16-levels/cell storage

    M. Horiguchi;M. Aoki;Y. Nakagome;S. Ikenaga

  • Subthreshold current reduction for decoded-driver by self-reverse biasing (DRAMs)

    T. Kawahara;M. Horiguchi;Y. Kawajiri;G. Kitsukawa

  • The impact of data-line interference noise on DRAM scaling

    Y. Nakagome;M. Aoki;S. Ikenaga;M. Horiguchi

  • Semiconductor device having a reference voltage generating circuit

    Masashi Horiguchi;Masakazu Aoki;Kiyoo Itoh;Yoshinobu Nakagome

  • Subthreshold-current reduction circuits for multi-gigabit DRAM's

    T. Sakata;K. Itoh;M. Horiguchi;M. Aoki

  • A flexible redundancy technique for high-density DRAMs

    M. Horiguchi;J. Etoh;M. Aoki;K. Itoh

  • Nanoscale Memory Repair

    Masashi Horiguchi;Kiyoo Itoh

  • Voltage converter of semiconductor device

    Masashi Horiguchi;Ryoichi Hori;Kiyoo Itoh;Yoshinobu Nakagome

  • Ultra-low voltage nano-scale memories

    Kiyoo Itoh;Masashi Horiguchi;Hitoshi Tanaka

  • A tunable CMOS-DRAM voltage limiter with stabilized feedback amplifier

    M. Horiguchi;M. Aoki;J. Etoh;H. Tanaka

  • DATA PROCESS SYSTEM

    Kawahara Takayuki;Kawajiri Yoshiki;Akiba Takesada;Horiguchi Masashi

  • Semiconductor IC device having a voltage conversion circuit which generates an internal supply voltage having value compensated for external supply voltage variations

    Kazuhiko Kajigaya;Tetsu Udagawa;Kyoko Ishii;Manabu Tsunozaki

  • 256-Mb DRAM circuit technologies for file applications

    G. Kitsukawa;M. Horiguchi;Y. Kawajiri;T. Kawahara

Frequent Co-Authors

Kiyoo Itoh
Kiyoo Itoh Hitachi (Japan)
Takayuki Kawahara
Takayuki Kawahara Tokyo University of Science
Tokuo Kure
Tokuo Kure Hitachi (Japan)
Shinichiro Kimura
Shinichiro Kimura Hitachi (Japan)

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