2026 Tohru Tsuruoka: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	43	12248	11846	769	733	192	8572

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

12248

11846

769

733

192

8572

Overview

Tohru Tsuruoka is affiliated with the National Institute for Materials Science in Japan. Their research primarily spans the fields of engineering and neuroscience, with a focus on electrical and electronic engineering as well as cellular and molecular neuroscience. Their work integrates aspects of advanced memory and neural computing, semiconductor materials and devices, and neuroscience and neural engineering.

The scientist has contributed to research on topics including:

Advanced Memory and Neural Computing
Neuroscience and Neural Engineering
Semiconductor materials and devices
Conducting polymers and applications
Photoreceptor and optogenetics research
Ferroelectric and Negative Capacitance Devices
Advanced Battery Materials and Technologies

Tohru Tsuruoka has frequently published in a range of journals, notably:

Japanese Journal of Applied Physics
ACS Applied Materials & Interfaces
Science and Technology of Advanced Materials
ACS Applied Electronic Materials
Journal of Materials Chemistry C

Their recent papers include:

"Solid polymer electrolyte-based atomic switches: from materials to mechanisms and applications," 2024, Science and Technology of Advanced Materials
"Proton-Gated Synaptic Transistors, Based on an Electron-Beam Patterned Nafion Electrolyte," 2023, ACS Applied Materials & Interfaces
"A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components," 2021, Advanced Electronic Materials
"Neuromorphic System for Edge Information Encoding: Emulating Retinal Center-Surround Antagonism by Li-Ion-Mediated Highly Interactive Devices," 2021, Nano Letters
"Solid state ionics for the development of artificial intelligence components," 2022, Japanese Journal of Applied Physics

Tohru Tsuruoka has collaborated often with several co-authors, notably:

Kazuya Terabe
Takashi Tsuchiya
Tsuyoshi Hasegawa
Masakazu Aono
Samapika Mallik

Best Publications

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

Takeo Ohno;Tsuyoshi Hasegawa;Tohru Tsuruoka;Kazuya Terabe

1872
Citations
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers

Tsuyoshi Hasegawa;Kazuya Terabe;Tohru Tsuruoka;Masakazu Aono

414
Citations
Learning Abilities Achieved by a Single Solid‐State Atomic Switch

Tsuyoshi Hasegawa;Takeo Ohno;Kazuya Terabe;Tohru Tsuruoka

358
Citations
Forming and switching mechanisms of a cation-migration-based oxide resistive memory

T. Tsuruoka;K. Terabe;Tsuyoshi Hasegawa;M. Aono

346
Citations
Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa;Ilia Valov;Ilia Valov

300
Citations
Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

Stefan Tappertzhofen;Ilia Valov;Tohru Tsuruoka;Tsuyoshi Hasegawa

272
Citations
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

Ilia Valov;Ina Sapezanskaia;Alpana Nayak;Tohru Tsuruoka

265
Citations
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration.

Rui Yang;Kazuya Terabe;Guangqiang Liu;Tohru Tsuruoka

224
Citations
Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch

Alpana Nayak;Takeo Ohno;Tohru Tsuruoka;Kazuya Terabe

208
Citations
Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch.

Tohru Tsuruoka;Tsuyoshi Hasegawa;Kazuya Terabe;Masakazu Aono

198
Citations
Current-driven phase-change optical gate switch using indium–tin-oxide heater

Kentaro Kato;Masashi Kuwahara;Hitoshi Kawashima;Tohru Tsuruoka

183
Citations
Effects of moisture and redox reactions in VCM and ECM resistive switching memories

Ilia Valov;Tohru Tsuruoka

177
Citations
Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

Tohru Tsuruoka;Ilia Valov;Ilia Valov;Stefan Tappertzhofen;Jan van den Hurk

171
Citations
Synaptic plasticity and memory functions achieved in a WO3-x-based nanoionics device by using the principle of atomic switch operation.

Rui Yang;Kazuya Terabe;Yiping Yao;Tohru Tsuruoka

167
Citations
Perfectly straight nanowires of fullerenes bearing long alkyl chains on graphite.

Takashi Nakanishi;Naoko Miyashita;Tsuyoshi Michinobu;Yutaka Wakayama

162
Citations
Mechanism for Conducting Filament Growth in Self‐Assembled Polymer Thin Films for Redox‐Based Atomic Switches

Karthik Krishnan;Tohru Tsuruoka;Cedric Mannequin;Masakazu Aono

158
Citations
A Polymer-Electrolyte-Based Atomic Switch

Shouming Wu;Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa

155
Citations
Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

Alpana Nayak;Takuro Tamura;Tohru Tsuruoka;Kazuya Terabe

131
Citations
Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa;Masakazu Aono

117
Citations
Aligned 1-D nanorods of a π-gelator exhibit molecular orientation and excitation energy transport different from entangled fiber networks

Keita Sakakibara;Parayalil Chithra;Bidisa Das;Taizo Mori

100
Citations