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D-Index & Metrics

Materials Science

D-Index
43
Citations
8572
World Ranking
12245
National Ranking
769

Tohru Tsuruoka publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tohru Tsuruoka sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 192 publications — 28th percentile

28% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tohru Tsuruoka D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tohru Tsuruoka sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tohru Tsuruoka is affiliated with the National Institute for Materials Science in Japan. Their research primarily spans the fields of engineering and neuroscience, with a focus on electrical and electronic engineering as well as cellular and molecular neuroscience. Their work integrates aspects of advanced memory and neural computing, semiconductor materials and devices, and neuroscience and neural engineering.

The scientist has contributed to research on topics including:

  • Advanced Memory and Neural Computing
  • Neuroscience and Neural Engineering
  • Semiconductor materials and devices
  • Conducting polymers and applications
  • Photoreceptor and optogenetics research
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Battery Materials and Technologies

Tohru Tsuruoka has frequently published in a range of journals, notably:

  • Japanese Journal of Applied Physics
  • ACS Applied Materials & Interfaces
  • Science and Technology of Advanced Materials
  • ACS Applied Electronic Materials
  • Journal of Materials Chemistry C

Their recent papers include:

  • "Solid polymer electrolyte-based atomic switches: from materials to mechanisms and applications," 2024, Science and Technology of Advanced Materials
  • "Proton-Gated Synaptic Transistors, Based on an Electron-Beam Patterned Nafion Electrolyte," 2023, ACS Applied Materials & Interfaces
  • "A Variety of Functional Devices Realized by Ionic Nanoarchitectonics, Complementing Electronics Components," 2021, Advanced Electronic Materials
  • "Neuromorphic System for Edge Information Encoding: Emulating Retinal Center-Surround Antagonism by Li-Ion-Mediated Highly Interactive Devices," 2021, Nano Letters
  • "Solid state ionics for the development of artificial intelligence components," 2022, Japanese Journal of Applied Physics

Tohru Tsuruoka has collaborated often with several co-authors, notably:

  • Kazuya Terabe
  • Takashi Tsuchiya
  • Tsuyoshi Hasegawa
  • Masakazu Aono
  • Samapika Mallik

Best Publications

  • Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

    Takeo Ohno;Tsuyoshi Hasegawa;Tohru Tsuruoka;Kazuya Terabe

  • Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers

    Tsuyoshi Hasegawa;Kazuya Terabe;Tohru Tsuruoka;Masakazu Aono

  • Learning Abilities Achieved by a Single Solid‐State Atomic Switch

    Tsuyoshi Hasegawa;Takeo Ohno;Kazuya Terabe;Tohru Tsuruoka

  • Forming and switching mechanisms of a cation-migration-based oxide resistive memory

    T. Tsuruoka;K. Terabe;Tsuyoshi Hasegawa;M. Aono

  • Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

    Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa;Ilia Valov;Ilia Valov

  • Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

    Stefan Tappertzhofen;Ilia Valov;Tohru Tsuruoka;Tsuyoshi Hasegawa

  • Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

    Ilia Valov;Ina Sapezanskaia;Alpana Nayak;Tohru Tsuruoka

  • On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration.

    Rui Yang;Kazuya Terabe;Guangqiang Liu;Tohru Tsuruoka

  • Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch

    Alpana Nayak;Takeo Ohno;Tohru Tsuruoka;Kazuya Terabe

  • Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch.

    Tohru Tsuruoka;Tsuyoshi Hasegawa;Kazuya Terabe;Masakazu Aono

  • Current-driven phase-change optical gate switch using indium–tin-oxide heater

    Kentaro Kato;Masashi Kuwahara;Hitoshi Kawashima;Tohru Tsuruoka

  • Effects of moisture and redox reactions in VCM and ECM resistive switching memories

    Ilia Valov;Tohru Tsuruoka

  • Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

    Tohru Tsuruoka;Ilia Valov;Ilia Valov;Stefan Tappertzhofen;Jan van den Hurk

  • Synaptic plasticity and memory functions achieved in a WO3-x-based nanoionics device by using the principle of atomic switch operation.

    Rui Yang;Kazuya Terabe;Yiping Yao;Tohru Tsuruoka

  • Perfectly straight nanowires of fullerenes bearing long alkyl chains on graphite.

    Takashi Nakanishi;Naoko Miyashita;Tsuyoshi Michinobu;Yutaka Wakayama

  • Mechanism for Conducting Filament Growth in Self‐Assembled Polymer Thin Films for Redox‐Based Atomic Switches

    Karthik Krishnan;Tohru Tsuruoka;Cedric Mannequin;Masakazu Aono

  • A Polymer-Electrolyte-Based Atomic Switch

    Shouming Wu;Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa

  • Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

    Alpana Nayak;Takuro Tamura;Tohru Tsuruoka;Kazuya Terabe

  • Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

    Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa;Masakazu Aono

  • Aligned 1-D nanorods of a π-gelator exhibit molecular orientation and excitation energy transport different from entangled fiber networks

    Keita Sakakibara;Parayalil Chithra;Bidisa Das;Taizo Mori

Frequent Co-Authors

Tsuyoshi Hasegawa
Tsuyoshi Hasegawa Waseda University
Masakazu Aono
Masakazu Aono National Institute for Materials Science
Kazuya Terabe
Kazuya Terabe National Institute for Materials Science
Ilia Valov
Ilia Valov RWTH Aachen University
James K. Gimzewski
James K. Gimzewski University of California, Los Angeles
Rainer Waser
Rainer Waser RWTH Aachen University
Katsuhiko Ariga
Katsuhiko Ariga National Institute for Materials Science
Jonathan P. Hill
Jonathan P. Hill National Institute for Materials Science
Lok Kumar Shrestha
Lok Kumar Shrestha National Institute for Materials Science
Christian Joachim
Christian Joachim Federal University of Toulouse Midi-Pyrénées

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