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Tsuyoshi Hasegawa

Tsuyoshi Hasegawa

D-Index & Metrics

Materials Science

D-Index
55
Citations
13902
World Ranking
8484
National Ranking
487

Tsuyoshi Hasegawa publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tsuyoshi Hasegawa sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 267 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tsuyoshi Hasegawa D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tsuyoshi Hasegawa sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 55 D-Index — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tsuyoshi Hasegawa is affiliated with Waseda University in Japan. Their research spans multiple disciplines, with primary fields of study in Medicine and Engineering. Within these fields, they have contributed notably to subfields such as Electrical and Electronic Engineering, Surgery, Pulmonary and Respiratory Medicine, Cellular and Molecular Neuroscience, and Artificial Intelligence.

The main topics of Tsuyoshi Hasegawa's work include:

  • Advanced Memory and Neural Computing
  • Neuroscience and Neural Engineering
  • Neural Networks and Reservoir Computing
  • Esophageal and GI Pathology
  • Ferroelectric and Negative Capacitance Devices
  • Gastric Cancer Management and Outcomes
  • Neural dynamics and brain function

Hasegawa's publication record includes numerous papers across various scientific journals. Recent papers of note are:

  • "Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications," 2022, published in Advanced Materials
  • "SiO2/Ta2O5 heterojunction ECM memristors: physical nature of their low voltage operation with high stability and uniformity," 2020, published in Nanoscale
  • "Asporin Expression on Stromal Cells and/or Cancer Cells Might Be A Useful Prognostic Marker in Patients with Diffuse-Type Gastric Cancer," 2021, published in European Surgical Research
  • "In-materio reservoir working at low frequencies in a Ag2S-island network," 2022, published in Nanoscale
  • "Ag2S island network reservoir that works with direct optical signal inputs," 2022, published in Japanese Journal of Applied Physics

In addition to journal articles, Tsuyoshi Hasegawa has contributed to book publications, including a title published by Academic Studies Press eBooks in 2022 named "Racing the Enemy."

The scientist frequently publishes in several core venues, notably:

  • Japanese Journal of Applied Physics
  • Nihon Rinsho Geka Gakkai Zasshi (Journal of Japan Surgical Association)
  • Journal of Gastrointestinal Surgery
  • Advanced Materials
  • Nanoscale

Collaborations are a significant part of Hasegawa's research output. Frequent co-authors include:

  • Katsunobu Sakurai
  • Naoshi Kubo
  • Toru Inoue
  • Yukio Nishiguchi
  • Kiyoshi Maeda

Best Publications

  • Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

    Takeo Ohno;Tsuyoshi Hasegawa;Tohru Tsuruoka;Kazuya Terabe

  • Quantized conductance atomic switch

    K. Terabe;T. Hasegawa;T. Nakayama;M. Aono

  • Nanometer-scale switches using copper sulfide

    T. Sakamoto;H. Sunamura;H. Kawaura;T. Hasegawa

  • Nanoscale cation motion in TaO x , HfO x and TiO x memristive systems

    Anja Wedig;Michael Luebben;Deok Yong Cho;Marco Moors

  • Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von‐Neumann Computers

    Tsuyoshi Hasegawa;Kazuya Terabe;Tohru Tsuruoka;Masakazu Aono

  • Learning Abilities Achieved by a Single Solid‐State Atomic Switch

    Tsuyoshi Hasegawa;Takeo Ohno;Kazuya Terabe;Tohru Tsuruoka

  • Forming and switching mechanisms of a cation-migration-based oxide resistive memory

    T. Tsuruoka;K. Terabe;Tsuyoshi Hasegawa;M. Aono

  • Electronic transport in Ta2O5 resistive switch

    Toshitsugu Sakamoto;Kevin Lister;Kevin Lister;Naoki Banno;Tsuyoshi Hasegawa

  • Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

    Tohru Tsuruoka;Kazuya Terabe;Tsuyoshi Hasegawa;Ilia Valov;Ilia Valov

  • A nonvolatile programmable solid electrolyte nanometer switch

    S. Kaeriyama;T. Sakamoto;H. Sunamura;M. Mizuno

  • Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories

    Stefan Tappertzhofen;Ilia Valov;Tohru Tsuruoka;Tsuyoshi Hasegawa

  • Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

    Ilia Valov;Ina Sapezanskaia;Alpana Nayak;Tohru Tsuruoka

  • Surface modification of MoS2 using an STM

    Shigeyuki Hosoki;Sumio Hosaka;Tsuyoshi Hasegawa

  • On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration.

    Rui Yang;Kazuya Terabe;Guangqiang Liu;Tohru Tsuruoka

  • Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach

    T. Fukumura;M. Ohtani;M. Kawasaki;Y. Okimoto

  • Controlling the Synaptic Plasticity of a Cu2S Gap-Type Atomic Switch

    Alpana Nayak;Takeo Ohno;Tohru Tsuruoka;Kazuya Terabe

  • Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch.

    Tohru Tsuruoka;Tsuyoshi Hasegawa;Kazuya Terabe;Masakazu Aono

  • Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures

    Tohru Tsuruoka;Ilia Valov;Ilia Valov;Stefan Tappertzhofen;Jan van den Hurk

  • Synaptic plasticity and memory functions achieved in a WO3-x-based nanoionics device by using the principle of atomic switch operation.

    Rui Yang;Kazuya Terabe;Yiping Yao;Tohru Tsuruoka

  • Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction

    K. Terabe;T. Nakayama;T. Hasegawa;M. Aono

  • Surface observing apparatus and method

    Sumio Hosaka;Atsushi Kikugawa;Yukio Honda;Hajime Koyanagi

Frequent Co-Authors

Masakazu Aono
Masakazu Aono National Institute for Materials Science
Tohru Tsuruoka
Tohru Tsuruoka National Institute for Materials Science
Kazuya Terabe
Kazuya Terabe National Institute for Materials Science
Sumio Hosaka
Sumio Hosaka Gunma University
Ilia Valov
Ilia Valov RWTH Aachen University
Rainer Waser
Rainer Waser RWTH Aachen University
James K. Gimzewski
James K. Gimzewski University of California, Los Angeles
Christian Joachim
Christian Joachim Federal University of Toulouse Midi-Pyrénées
Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science

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