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Philip J. Tobin

Philip J. Tobin

D-Index & Metrics

Materials Science

D-Index
60
Citations
9727
World Ranking
7202
National Ranking
90

Overview

Philip J. Tobin is affiliated with NXP in the Netherlands. Their professional work is connected with this primary institution, which situates them within the technological and industrial landscape of the Netherlands.

There are no recorded recent papers indexed for Philip J. Tobin, and no information is available on co-authors or frequent publication venues, indicating either a limited public academic footprint or a focus on non-published professional work within their field.

Details about their main fields and subfields of study have not been provided, nor is there information about the specific topics they have worked on. This absence suggests that publicly accessible research profiles or databases do not list research outputs or categorizations for this individual at this time.

There are no records of book publications, which may imply that their contributions have not extended into academic book authorship or that such records have not been documented in the available data.

Similarly, no awards or honors have been noted, and Philip J. Tobin is not listed as deceased, indicating they may currently be active or simply that such data is not publicly documented.

Given the lack of indexed publications, coauthor networks, or detailed research areas, the profile of Philip J. Tobin remains limited to their institutional affiliation, which is with NXP in the Netherlands.

Best Publications

  • Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

    Maciej Gutowski;John E. Jaffe;Chun-Li Liu;Matt Stoker

  • Method of forming metal oxide with high dielectric constant

    Maty Bykas;Cullor Jesus;I Hedge Lama;Philip J Tobin

  • The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

    J.R. Pfiester;F.K. Baker;T.C. Mele;H.-H. Tseng

  • Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

    C.C. Hobbs;L.R.C. Fonseca;A. Knizhnik;V. Dhandapani

  • Contributions to the effective work function of platinum on hafnium dioxide

    J. K. Schaeffer;L. R. C. Fonseca;S. B. Samavedam;Y. Liang

  • CMOS semiconductor devices and method of formation

    Bikas Maiti;Philip J. Tobin;C. Joseph Mogab;Christopher Hobbs

  • Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)

    Philip J. Tobin;Yoshio Okada;Sergio A. Ajuria;Vikas Lakhotia

  • Crystallization in hafnia- and zirconia-based systems

    S. V. Ushakov;A. Navrotsky;Y. Yang;S. Stemmer

  • Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO2

    D. Triyoso;R. Liu;D. Roan;M. Ramon

  • Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

    Rama I. Hegde;Philip J. Tobin;Kimberly G. Reid;Bikas Maiti

  • Fermi level pinning at the polySi/metal oxide interface

    C. Hobbs;L. Fonseca;V. Dhandapani;S. Samavedam

  • Method for forming a semiconductor device

    Philip J. Tobin;Olubunmi O. Adetutu;Rama I. Hegde;Bikas Maiti

  • Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits

    Hsing-Huang Tseng;Philip J. Tobin

  • Process for forming a semiconductor device

    Philip J. Tobin;Rama I. Hegde;Hsing-Huang Tseng;David O'Meara

  • Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

    J. K. Schaeffer;S. B. Samavedam;D. C. Gilmer;V. Dhandapani

  • Capped dual metal gate transistors for CMOS process and method for making the same

    Srikanth B. Samavedam;Philip J. Tobin

  • Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device

    Hsing-Huang Tseng;Philip J. Tobin

  • Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

    Yoshio Okada;Philip J. Tobin;Vikas Lakhotia;William A. Feil

  • Process for fabricating a MOSFET device having reduced reverse short channel effects

    Hsing-Huang Tseng;Philip J. Tobin;Paul G. Y. Tsui;Shih W. Sun

  • Furnace grown gate oxynitride using nitric oxide (NO)

    Y. Okada;P.J. Tobin;K.G. Reid;R.I. Hegde

  • Fermi-level pinning at the polysilicon/metal oxide interface-Part I

    Unknown

Frequent Co-Authors

Rama I. Hegde
Rama I. Hegde NXP (Netherlands)
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
Kaupo Kukli
Kaupo Kukli University of Tartu
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Timo Sajavaara
Timo Sajavaara University of Jyväskylä
Markku Leskelä
Markku Leskelä University of Helsinki
Mikko Ritala
Mikko Ritala University of Helsinki
Tso-Ping Ma
Tso-Ping Ma Yale University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Juhani Keinonen
Juhani Keinonen University of Helsinki

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