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Philip J. Tobin

Philip J. Tobin

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 60 7200 6962 90 82 225 9727

Philip J. Tobin publications per year

The chart shows the history of publications by Philip J. Tobin between 1969 and 2019, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Philip J. Tobin published across 51 years, from 1969 to 2019, averaging 4.5 papers a year. Output peaked at 25 publications in 2004. 1 of the 229 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1969 to 2019. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2004. 1969: 2 publications 1970: 0 publications 1971: 1 publication 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 2 publications 1980: 1 publication 1981: 0 publications 1982: 0 publications 1983: 0 publications 1984: 1 publication 1985: 1 publication 1986: 3 publications 1987: 3 publications 1988: 3 publications 1989: 4 publications 1990: 6 publications 1991: 7 publications 1992: 11 publications 1993: 19 publications 1994: 13 publications 1995: 12 publications 1996: 10 publications 1997: 10 publications 1998: 5 publications 1999: 11 publications 2000: 10 publications 2001: 6 publications 2002: 18 publications 2003: 10 publications 2004: 25 publications 2005: 16 publications 2006: 12 publications 2007: 5 publications 2008: 0 publications 2009: 1 publication 2010: 0 publications 2011: 0 publications 2012: 0 publications 2013: 0 publications 2014: 0 publications 2015: 0 publications 2016: 0 publications 2017: 0 publications 2018: 0 publications 2019: 1 publication
1969 2019

229 publications in total across all disciplines

View publications per year as a table
Philip J. Tobin: publications per year, 1969 to 2019
Year Publications
1969 2
1970 0
1971 1
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 2
1980 1
1981 0
1982 0
1983 0
1984 1
1985 1
1986 3
1987 3
1988 3
1989 4
1990 6
1991 7
1992 11
1993 19
1994 13
1995 12
1996 10
1997 10
1998 5
1999 11
2000 10
2001 6
2002 18
2003 10
2004 25
2005 16
2006 12
2007 5
2008 0
2009 1
2010 0
2011 0
2012 0
2013 0
2014 0
2015 0
2016 0
2017 0
2018 0
2019 1
Total 229
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Philip J. Tobin publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Philip J. Tobin sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 210–229 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 225 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862 225
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Philip J. Tobin D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Philip J. Tobin sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 60–61 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587 60
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Philip J. Tobin is affiliated with NXP in the Netherlands. Their professional work is connected with this primary institution, which situates them within the technological and industrial landscape of the Netherlands.

There are no recorded recent papers indexed for Philip J. Tobin, and no information is available on co-authors or frequent publication venues, indicating either a limited public academic footprint or a focus on non-published professional work within their field.

Details about their main fields and subfields of study have not been provided, nor is there information about the specific topics they have worked on. This absence suggests that publicly accessible research profiles or databases do not list research outputs or categorizations for this individual at this time.

There are no records of book publications, which may imply that their contributions have not extended into academic book authorship or that such records have not been documented in the available data.

Similarly, no awards or honors have been noted, and Philip J. Tobin is not listed as deceased, indicating they may currently be active or simply that such data is not publicly documented.

Given the lack of indexed publications, coauthor networks, or detailed research areas, the profile of Philip J. Tobin remains limited to their institutional affiliation, which is with NXP in the Netherlands.

Best Publications

  • Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

    Maciej Gutowski;John E. Jaffe;Chun-Li Liu;Matt Stoker

  • Method of forming metal oxide with high dielectric constant

    Maty Bykas;Cullor Jesus;I Hedge Lama;Philip J Tobin

  • The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

    J.R. Pfiester;F.K. Baker;T.C. Mele;H.-H. Tseng

  • Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

    C.C. Hobbs;L.R.C. Fonseca;A. Knizhnik;V. Dhandapani

  • Contributions to the effective work function of platinum on hafnium dioxide

    J. K. Schaeffer;L. R. C. Fonseca;S. B. Samavedam;Y. Liang

  • CMOS semiconductor devices and method of formation

    Bikas Maiti;Philip J. Tobin;C. Joseph Mogab;Christopher Hobbs

  • Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)

    Philip J. Tobin;Yoshio Okada;Sergio A. Ajuria;Vikas Lakhotia

  • Crystallization in hafnia- and zirconia-based systems

    S. V. Ushakov;A. Navrotsky;Y. Yang;S. Stemmer

  • Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO2

    D. Triyoso;R. Liu;D. Roan;M. Ramon

  • Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

    Rama I. Hegde;Philip J. Tobin;Kimberly G. Reid;Bikas Maiti

  • Fermi level pinning at the polySi/metal oxide interface

    C. Hobbs;L. Fonseca;V. Dhandapani;S. Samavedam

  • Method for forming a semiconductor device

    Philip J. Tobin;Olubunmi O. Adetutu;Rama I. Hegde;Bikas Maiti

  • Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits

    Hsing-Huang Tseng;Philip J. Tobin

  • Process for forming a semiconductor device

    Philip J. Tobin;Rama I. Hegde;Hsing-Huang Tseng;David O'Meara

  • Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

    J. K. Schaeffer;S. B. Samavedam;D. C. Gilmer;V. Dhandapani

  • Capped dual metal gate transistors for CMOS process and method for making the same

    Srikanth B. Samavedam;Philip J. Tobin

  • Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device

    Hsing-Huang Tseng;Philip J. Tobin

  • Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

    Yoshio Okada;Philip J. Tobin;Vikas Lakhotia;William A. Feil

  • Process for fabricating a MOSFET device having reduced reverse short channel effects

    Hsing-Huang Tseng;Philip J. Tobin;Paul G. Y. Tsui;Shih W. Sun

  • Furnace grown gate oxynitride using nitric oxide (NO)

    Y. Okada;P.J. Tobin;K.G. Reid;R.I. Hegde

  • Fermi-level pinning at the polysilicon/metal oxide interface-Part I

    Unknown

Frequent Co-Authors

Rama I. Hegde
Rama I. Hegde NXP (Netherlands)
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
Kaupo Kukli
Kaupo Kukli University of Tartu
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Timo Sajavaara
Timo Sajavaara University of Jyväskylä
Markku Leskelä
Markku Leskelä University of Helsinki
Mikko Ritala
Mikko Ritala University of Helsinki
Tso-Ping Ma
Tso-Ping Ma Yale University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Juhani Keinonen
Juhani Keinonen University of Helsinki

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