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Philip J. Tobin

Philip J. Tobin

D-Index & Metrics

Materials Science

D-Index
60
Citations
9727
World Ranking
7200
National Ranking
90

Philip J. Tobin publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Philip J. Tobin sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 225 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Philip J. Tobin D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Philip J. Tobin sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Philip J. Tobin is affiliated with NXP in the Netherlands. Their professional work is connected with this primary institution, which situates them within the technological and industrial landscape of the Netherlands.

There are no recorded recent papers indexed for Philip J. Tobin, and no information is available on co-authors or frequent publication venues, indicating either a limited public academic footprint or a focus on non-published professional work within their field.

Details about their main fields and subfields of study have not been provided, nor is there information about the specific topics they have worked on. This absence suggests that publicly accessible research profiles or databases do not list research outputs or categorizations for this individual at this time.

There are no records of book publications, which may imply that their contributions have not extended into academic book authorship or that such records have not been documented in the available data.

Similarly, no awards or honors have been noted, and Philip J. Tobin is not listed as deceased, indicating they may currently be active or simply that such data is not publicly documented.

Given the lack of indexed publications, coauthor networks, or detailed research areas, the profile of Philip J. Tobin remains limited to their institutional affiliation, which is with NXP in the Netherlands.

Best Publications

  • Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

    Maciej Gutowski;John E. Jaffe;Chun-Li Liu;Matt Stoker

  • Method of forming metal oxide with high dielectric constant

    Maty Bykas;Cullor Jesus;I Hedge Lama;Philip J Tobin

  • The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

    J.R. Pfiester;F.K. Baker;T.C. Mele;H.-H. Tseng

  • Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

    C.C. Hobbs;L.R.C. Fonseca;A. Knizhnik;V. Dhandapani

  • Contributions to the effective work function of platinum on hafnium dioxide

    J. K. Schaeffer;L. R. C. Fonseca;S. B. Samavedam;Y. Liang

  • CMOS semiconductor devices and method of formation

    Bikas Maiti;Philip J. Tobin;C. Joseph Mogab;Christopher Hobbs

  • Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)

    Philip J. Tobin;Yoshio Okada;Sergio A. Ajuria;Vikas Lakhotia

  • Crystallization in hafnia- and zirconia-based systems

    S. V. Ushakov;A. Navrotsky;Y. Yang;S. Stemmer

  • Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO2

    D. Triyoso;R. Liu;D. Roan;M. Ramon

  • Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

    Rama I. Hegde;Philip J. Tobin;Kimberly G. Reid;Bikas Maiti

  • Fermi level pinning at the polySi/metal oxide interface

    C. Hobbs;L. Fonseca;V. Dhandapani;S. Samavedam

  • Method for forming a semiconductor device

    Philip J. Tobin;Olubunmi O. Adetutu;Rama I. Hegde;Bikas Maiti

  • Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits

    Hsing-Huang Tseng;Philip J. Tobin

  • Process for forming a semiconductor device

    Philip J. Tobin;Rama I. Hegde;Hsing-Huang Tseng;David O'Meara

  • Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

    J. K. Schaeffer;S. B. Samavedam;D. C. Gilmer;V. Dhandapani

  • Capped dual metal gate transistors for CMOS process and method for making the same

    Srikanth B. Samavedam;Philip J. Tobin

  • Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device

    Hsing-Huang Tseng;Philip J. Tobin

  • Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

    Yoshio Okada;Philip J. Tobin;Vikas Lakhotia;William A. Feil

  • Process for fabricating a MOSFET device having reduced reverse short channel effects

    Hsing-Huang Tseng;Philip J. Tobin;Paul G. Y. Tsui;Shih W. Sun

  • Furnace grown gate oxynitride using nitric oxide (NO)

    Y. Okada;P.J. Tobin;K.G. Reid;R.I. Hegde

  • Fermi-level pinning at the polysilicon/metal oxide interface-Part I

    Unknown

Frequent Co-Authors

Rama I. Hegde
Rama I. Hegde NXP (Netherlands)
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
Kaupo Kukli
Kaupo Kukli University of Tartu
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Timo Sajavaara
Timo Sajavaara University of Jyväskylä
Markku Leskelä
Markku Leskelä University of Helsinki
Mikko Ritala
Mikko Ritala University of Helsinki
Tso-Ping Ma
Tso-Ping Ma Yale University
Stephen J. Pearton
Stephen J. Pearton University of Florida
Juhani Keinonen
Juhani Keinonen University of Helsinki

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