World's Best Scientists 2026 revealed!

Overview

Rama I. Hegde is affiliated with NXP in the Netherlands and works primarily in the fields of Chemical Engineering, Engineering, and Chemistry. Their research spans several subfields including Bioengineering, Electrical and Electronic Engineering, and Electrochemistry.

The scientist's research focuses on topics related to Analytical Chemistry and Sensors, Electrochemical Sensors and Biosensors, and Electrochemical Analysis and Applications.

Rama I. Hegde has published work in the following venues:

  • American Journal of Physical Chemistry

One recent paper authored by Rama I. Hegde is titled Voltammetric Assessment of Paracetamol on a CuONPs - MWCNTs Modified Glassy Carbon Electrode, published in 2024 in the American Journal of Physical Chemistry.

Collaborations play a role in their research, with frequent co-authors including Vishwanatha Poojary and Kiran Kamath.

Best Publications

  • Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

    Maciej Gutowski;John E. Jaffe;Chun-Li Liu;Matt Stoker

  • Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

    C.C. Hobbs;L.R.C. Fonseca;A. Knizhnik;V. Dhandapani

  • Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

    Rama I. Hegde;Philip J. Tobin;Kimberly G. Reid;Bikas Maiti

  • Fermi level pinning at the polySi/metal oxide interface

    C. Hobbs;L. Fonseca;V. Dhandapani;S. Samavedam

  • Selective removal of a metal oxide dielectric

    Christopher C. Hobbs;Rama I. Hegde;Phillip J. Tobin

  • Method for forming a semiconductor device

    Philip J. Tobin;Olubunmi O. Adetutu;Rama I. Hegde;Bikas Maiti

  • Process for forming a semiconductor device

    Philip J. Tobin;Rama I. Hegde;Hsing-Huang Tseng;David O'Meara

  • Hafnium zirconate gate dielectric for advanced gate stack applications

    R. I. Hegde;D. H. Triyoso;S. B. Samavedam;B. E. White

  • Furnace grown gate oxynitride using nitric oxide (NO)

    Y. Okada;P.J. Tobin;K.G. Reid;R.I. Hegde

  • Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

    D. C. Gilmer;R. Hegde;R. Cotton;R. Garcia

  • Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

    D. H. Triyoso;R. I. Hegde;S. Zollner;M. E. Ramon

  • Thin film properties of low‐pressure chemical vapor deposition TiN barrier for ultra‐large‐scale integration applications

    Rama I. Hegde;Robert W. Fiordalice;Edward O. Travis;Philip J. Tobin

  • Challenges for the integration of metal gate electrodes

    J.K. Schaeffer;C. Capasso;L.R.C. Fonseca;S. Samavedam

  • Gate dielectric and method therefor

    Rama I. Hegde;Joseph C. Mogab;Philip J. Tobin;Hsing H. Tseng

  • Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

    S.B. Samavedam;L.B. La;P.J. Tobin;B. White

  • Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

    D. H. Triyoso;R. I. Hegde;J. Grant;P. Fejes

  • Dual-metal gate CMOS with HfO 2 gate dielectric

    S.B. Samavedam;L.B. La;J. Smith;S. Dakshina-Murthy

  • Growth and Film Characteristics of N 2 O and NO Oxynitride Gate and Tunnel Dielectrics

    Rama I. Hegde;Bikas Maiti;Philip J. Tobin

  • Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

    D. H. Triyoso;R. I. Hegde;J. K. Schaeffer;R. Gregory

  • Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- $k$ /Metal Gate Stack Device Reliability and Performance Enhancement

    Tseng Hsing-Huang;P.J. Tobin;S. Kalpat;J.K. Schaeffer

Frequent Co-Authors

Philip J. Tobin
Philip J. Tobin NXP (Netherlands)
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
Kaupo Kukli
Kaupo Kukli University of Tartu
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Timo Sajavaara
Timo Sajavaara University of Jyväskylä
Markku Leskelä
Markku Leskelä University of Helsinki
Mikko Ritala
Mikko Ritala University of Helsinki
Juhani Keinonen
Juhani Keinonen University of Helsinki
Wayne L. Gladfelter
Wayne L. Gladfelter University of Minnesota
Stephen A. Campbell
Stephen A. Campbell University of Minnesota

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