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Rama I. Hegde publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Rama I. Hegde sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

The last bar groups every scientist with 804 publications or more.

Rama I. Hegde D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Rama I. Hegde sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

The last bar groups every scientist with 107 D-Index or more.

Overview

Rama I. Hegde is affiliated with NXP in the Netherlands and works primarily in the fields of Chemical Engineering, Engineering, and Chemistry. Their research spans several subfields including Bioengineering, Electrical and Electronic Engineering, and Electrochemistry.

The scientist's research focuses on topics related to Analytical Chemistry and Sensors, Electrochemical Sensors and Biosensors, and Electrochemical Analysis and Applications.

Rama I. Hegde has published work in the following venues:

  • American Journal of Physical Chemistry

One recent paper authored by Rama I. Hegde is titled Voltammetric Assessment of Paracetamol on a CuONPs - MWCNTs Modified Glassy Carbon Electrode, published in 2024 in the American Journal of Physical Chemistry.

Collaborations play a role in their research, with frequent co-authors including Vishwanatha Poojary and Kiran Kamath.

Best Publications

  • Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

    Maciej Gutowski;John E. Jaffe;Chun-Li Liu;Matt Stoker

  • Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

    C.C. Hobbs;L.R.C. Fonseca;A. Knizhnik;V. Dhandapani

  • Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

    Rama I. Hegde;Philip J. Tobin;Kimberly G. Reid;Bikas Maiti

  • Fermi level pinning at the polySi/metal oxide interface

    C. Hobbs;L. Fonseca;V. Dhandapani;S. Samavedam

  • Selective removal of a metal oxide dielectric

    Christopher C. Hobbs;Rama I. Hegde;Phillip J. Tobin

  • Method for forming a semiconductor device

    Philip J. Tobin;Olubunmi O. Adetutu;Rama I. Hegde;Bikas Maiti

  • Process for forming a semiconductor device

    Philip J. Tobin;Rama I. Hegde;Hsing-Huang Tseng;David O'Meara

  • Hafnium zirconate gate dielectric for advanced gate stack applications

    R. I. Hegde;D. H. Triyoso;S. B. Samavedam;B. E. White

  • Furnace grown gate oxynitride using nitric oxide (NO)

    Y. Okada;P.J. Tobin;K.G. Reid;R.I. Hegde

  • Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

    D. C. Gilmer;R. Hegde;R. Cotton;R. Garcia

  • Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

    D. H. Triyoso;R. I. Hegde;S. Zollner;M. E. Ramon

  • Thin film properties of low‐pressure chemical vapor deposition TiN barrier for ultra‐large‐scale integration applications

    Rama I. Hegde;Robert W. Fiordalice;Edward O. Travis;Philip J. Tobin

  • Challenges for the integration of metal gate electrodes

    J.K. Schaeffer;C. Capasso;L.R.C. Fonseca;S. Samavedam

  • Gate dielectric and method therefor

    Rama I. Hegde;Joseph C. Mogab;Philip J. Tobin;Hsing H. Tseng

  • Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

    S.B. Samavedam;L.B. La;P.J. Tobin;B. White

  • Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

    D. H. Triyoso;R. I. Hegde;J. Grant;P. Fejes

  • Dual-metal gate CMOS with HfO 2 gate dielectric

    S.B. Samavedam;L.B. La;J. Smith;S. Dakshina-Murthy

  • Growth and Film Characteristics of N 2 O and NO Oxynitride Gate and Tunnel Dielectrics

    Rama I. Hegde;Bikas Maiti;Philip J. Tobin

  • Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

    D. H. Triyoso;R. I. Hegde;J. K. Schaeffer;R. Gregory

  • Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- $k$ /Metal Gate Stack Device Reliability and Performance Enhancement

    Tseng Hsing-Huang;P.J. Tobin;S. Kalpat;J.K. Schaeffer

Frequent Co-Authors

Philip J. Tobin
Philip J. Tobin NXP (Netherlands)
Bich-Yen Nguyen
Bich-Yen Nguyen Soitec (France)
Kaupo Kukli
Kaupo Kukli University of Tartu
Alexander A. Demkov
Alexander A. Demkov The University of Texas at Austin
Timo Sajavaara
Timo Sajavaara University of Jyväskylä
Markku Leskelä
Markku Leskelä University of Helsinki
Mikko Ritala
Mikko Ritala University of Helsinki
Juhani Keinonen
Juhani Keinonen University of Helsinki
Wayne L. Gladfelter
Wayne L. Gladfelter University of Minnesota
Stephen A. Campbell
Stephen A. Campbell University of Minnesota

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