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Materials Science

D-Index
69
Citations
21019
World Ranking
4561
National Ranking
151

Overview

Andres Cuevas is affiliated with the Australian National University in Australia. Their research primarily focuses on silicon and solar cell technologies, semiconductor materials and interfaces, and thin-film transistor technologies. They have also contributed to integrated circuits and semiconductor failure analysis, chemical and physical properties of materials, ion-surface interactions and analysis, and silicon nanostructures and photoluminescence.

The scientist has published extensively in the fields of engineering and physics and astronomy, particularly in electrical and electronic engineering as well as atomic and molecular physics and optics. These areas represent the main and subfields of their academic work.

Frequent publication venues for Andres Cuevas include:

  • Solar RRL
  • Progress in Photovoltaics Research and Applications
  • Fraunhofer-Publica (Fraunhofer-Gesellschaft)
  • Joule
  • Solar Energy Materials and Solar Cells

Some of their recent papers are:

  • "Polysilicon passivated junctions: The next technology for silicon solar cells?" (2021, Joule)
  • "Analyzing back contacts of silicon solar cells by Suns-VOC-measurement at high illumination densities" (2022, Fraunhofer-Publica (Fraunhofer-Gesellschaft))
  • "Silicon solar cells with passivating contacts: Classification and performance" (2022, Progress in Photovoltaics Research and Applications)
  • "Progress with luminescence imaging for the characterisation of silicon wafers and solar cells" (2022, Fraunhofer-Publica (Fraunhofer-Gesellschaft))
  • "Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiOx passivating contacts" (2021, Progress in Photovoltaics Research and Applications)

Frequent co-authors who have collaborated with Andres Cuevas include:

  • Di Yan
  • Daniel Macdonald
  • Thien N. Truong
  • Mowafak Al-Jassim
  • Hieu T. Nguyen

Best Publications

  • Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

    Ronald A. Sinton;Andres Cuevas

  • High-efficiency crystalline silicon solar cells: status and perspectives

    Corsin Battaglia;Andres Cuevas;Stefaan De Wolf

  • Improved quantitative description of Auger recombination in crystalline silicon

    Armin Richter;Stefan W. Glunz;Florian Werner;Jan Schmidt

  • Quasi-steady-state photoconductance, a new method for solar cell material and device characterization

    R.A. Sinton;A. Cuevas;M. Stuckings

  • General parameterization of Auger recombination in crystalline silicon

    Mark J. Kerr;Andres Cuevas

  • Efficient silicon solar cells with dopant-free asymmetric heterocontacts

    James Bullock;Mark Hettick;Mark Hettick;Jonas Geissbühler;Alison J. Ong;Alison J. Ong

  • A quasi-steady-state open-circuit voltage method for solar cell characterization

    R.A. Sinton;Andres Cuevas

  • Charge Carrier Separation in Solar Cells

    Uli Würfel;Andres Cuevas;Peter Würfel

  • Measuring and interpreting the lifetime of silicon wafers

    Andrés Cuevas;Daniel Macdonald

  • Texturing industrial multicrystalline silicon solar cells

    Daniel MacDonald;Andres Cuevas;Mark Kerr;Christian Samundsett

  • Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells

    James Bullock;Andres Cuevas;Thomas Allen;Corsin Battaglia

  • Very low bulk and surface recombination in oxidized silicon wafers

    Mark J Kerr;Andres Cuevas

  • Surface passivation of silicon solar cells using plasma-enhanced chemical-vapour-deposited SiN films and thin thermal SiO2/plasma SiN stacks

    Jan Schmidt;Mark John Kerr;Andres Cuevas

  • Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

    M. J. Kerr;J. Schmidt;A. Cuevas;J. H. Bultman

  • Trapping of minority carriers in multicrystalline silicon

    Daniel MacDonald;Andres Cuevas

  • Surface recombination velocity of highly doped n-type silicon

    Andrés Cuevas;Paul A. Basore;Gaëlle Giroult‐Matlakowski;Christiane Dubois

  • Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon

    Jan Schmidt;Andrés Cuevas

  • Transition-metal profiles in a multicrystalline silicon ingot

    Daniel MacDonald;Andres Cuevas;Atsushi Kinomura;Yukihiro Nakano

  • Conductive and Stable Magnesium Oxide Electron‐Selective Contacts for Efficient Silicon Solar Cells

    Yimao Wan;Christian Samundsett;James Bullock;Mark Hettick

  • Magnesium Fluoride Electron-Selective Contacts for Crystalline Silicon Solar Cells

    Yimao Wan;Chris Samundsett;James Bullock;James Bullock;Thomas Allen

  • Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters

    Pietro P. Altermatt;Jürgen O. Schumacher;Andres Cuevas;Mark J. Kerr

Frequent Co-Authors

Daniel Macdonald
Daniel Macdonald Australian National University
Yimao Wan
Yimao Wan Australian National University
Ali Javey
Ali Javey University of California, Berkeley
Jan Schmidt
Jan Schmidt University of Hannover
Mark Hettick
Mark Hettick University of California, Berkeley
Keith R. McIntosh
Keith R. McIntosh University of Wollongong
Stefaan De Wolf
Stefaan De Wolf King Abdullah University of Science and Technology
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems
Andrew Blakers
Andrew Blakers Australian National University
Jun Peng
Jun Peng Australian National University

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