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D-Index & Metrics

Materials Science

D-Index
66
Citations
16096
World Ranking
5334
National Ranking
312

Rolf Brendel publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Rolf Brendel sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 479 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Rolf Brendel D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Rolf Brendel sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 66 D-Index — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Rolf Brendel is affiliated with the University of Hannover in Germany and specializes primarily in the field of engineering, with a focus on electrical and electronic engineering. Their research also spans several subfields including atomic and molecular physics, optics, renewable energy, sustainability and the environment, materials chemistry, and environmental engineering.

Their work is concentrated around core topics such as silicon and solar cell technologies, thin-film transistor technologies, semiconductor materials and interfaces, integrated energy systems optimization, solar cell performance optimization, silicon nanostructures and photoluminescence, and photovoltaic system optimization techniques.

Brendel has published extensively in numerous scientific venues. Their most frequent publication platforms include Solar RRL, Progress in Photovoltaics Research and Applications, Solar Energy Materials and Solar Cells, IEEE Journal of Photovoltaics, and SSRN Electronic Journal.

Recent notable papers by Brendel feature contributions to understanding and improving solar cell efficiency and related technologies. These include:

  • Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell, 2020, Scientific Reports
  • Evolutionary PERC+ solar cell efficiency projection towards 24% evaluating shadow-mask-deposited poly-Si fingers below the Ag front contact as next improvement step, 2020, Solar Energy Materials and Solar Cells
  • Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells, 2021, Scientific Reports
  • Firing-Stable PECVD SiOxNy/n-Poly-Si Surface Passivation for Silicon Solar Cells, 2021, ACS Applied Energy Materials
  • Hydrogen supply scenarios for a climate neutral energy system in Germany, 2022, International Journal of Hydrogen Energy

Throughout their career, Brendel has frequently collaborated with other researchers. Their most common co-authors include Robby Peibst, Byungsul Min, Raphael Niepelt, Marlon Schlemminger, and Felix Haase, reflecting ongoing partnerships within the solar cell and semiconductor research community.

Best Publications

  • Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

    Felix Haase;Christina Hollemann;Sören Schäfer;Agnes Merkle

  • Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

    J Jeroen Schmidt;A Merkle;R Brendel;B Bram Hoex

  • Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

    Carsten Schinke;P. Christian Peest;Jan Schmidt;Rolf Brendel

  • Surface passivation of crystalline silicon solar cells: Present and future

    Jan Schmidt;Robby Peibst;Rolf Brendel

  • An infrared dielectric function model for amorphous solids

    Unknown

  • 19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon

    Jan Hendrik Petermann;Dimitri Zielke;Jan Schmidt;Felix Haase

  • Electronic and chemical properties of the c-Si/Al2O3 interface

    Florian Werner;Boris Veith;Dimitri Zielke;Lisa Kühnemund

  • Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

    Udo Römer;Robby Peibst;Tobias Ohrdes;Bianca Lim

  • Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks

    Jan Schmidt;Boris Veith;Rolf Brendel

  • Series resistance imaging of solar cells by voltage dependent electroluminescence

    David Hinken;Klaus Ramspeck;Karsten Bothe;Bernhard Fischer

  • Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?

    R. Peibst;U. Römer;Y. Larionova;M. Rienäcker

  • Contact Selectivity and Efficiency in Crystalline Silicon Photovoltaics

    Rolf Brendel;Robby Peibst

  • Review of Layer Transfer Processes for Crystalline Thin-Film Silicon Solar Cells

    Rolf Brendel

  • Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography

    K. Ramspeck;K. Bothe;D. Hinken;B. Fischer

  • Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

    Udo Romer;Robby Peibst;Tobias Ohrdes;Bianca Lim

  • 20 1%-efficient Crystalline Silicon Solar Cell with Amorphous Silicon Rear-surface Passivation

    Martin Schaper;Jan Schmidt;Heiko Plagwitz;Rolf Brendel

  • 19.4%-efficient large-area fully screen-printed silicon solar cells

    Sebastian Gatz;Helge Hannebauer;Rene Hesse;Florian Werner

  • A Roadmap Toward 24% Efficient PERC Solar Cells in Industrial Mass Production

    Byungsul Min;Matthias Muller;Hannes Wagner;Gerd Fischer

  • Photoconductance‐calibrated photoluminescence lifetime imaging of crystalline silicon

    Sandra Herlufsen;Jan Schmidt;David Hinken;Karsten Bothe

  • Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement

    R. Brendel;M. Hirsch;R. Plieninger;J.H. Werner

  • Towards 20% efficient large-area screen-printed rear-passivated silicon solar cells

    Thorsten Dullweber;Sebastian Gatz;Helge Hannebauer;Tom Falcon

  • Solar cell efficiency and carrier multiplication in Si1−xGex alloys

    M. Wolf;R. Brendel;J. H. Werner;H. J. Queisser

Frequent Co-Authors

Jan Schmidt
Jan Schmidt University of Hannover
Bram Hoex
Bram Hoex University of New South Wales
Andres Cuevas
Andres Cuevas Australian National University
Jürgen H. Werner
Jürgen H. Werner University of Stuttgart
Lars Korte
Lars Korte Helmholtz-Zentrum Berlin für Materialien und Energie
Stefan W. Glunz
Stefan W. Glunz Fraunhofer Institute for Solar Energy Systems
Jef Poortmans
Jef Poortmans KU Leuven
Christophe Ballif
Christophe Ballif École Polytechnique Fédérale de Lausanne
Armin G. Aberle
Armin G. Aberle National University of Singapore

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