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D-Index & Metrics

Engineering and Technology

D-Index
55
Citations
9889
World Ranking
3045
National Ranking
61

Research.com Recognitions

  • 2010 - IEEE Fellow For contributions to the understanding of gate oxide failure and reliability methodology

Overview

Jordi Suñé is affiliated with the Autonomous University of Barcelona in Spain. The primary research fields include Engineering and Neuroscience, with significant contributions in Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, and Cognitive Neuroscience among other subfields.

Their scholarly work has focused extensively on Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, Semiconductor materials and devices, Neural dynamics and brain function, CCD and CMOS Imaging Sensors, and stochastic dynamics and bifurcation.

Recent publications by Jordi Suñé include:

  • Hardware implementation of memristor-based artificial neural networks, 2024, Nature Communications
  • Standards for the Characterization of Endurance in Resistive Switching Devices, 2021, ACS Nano
  • On the Thermal Models for Resistive Random Access Memory Circuit Simulation, 2021, Nanomaterials
  • Memristors for Neuromorphic Circuits and Artificial Intelligence Applications, 2020, Materials
  • SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices, 2022, Micromachines

Jordi Suñé frequently collaborates with researchers such as E. Miranda, Fernando Aguirre, F. Campabadal, Mireia Bargalló González, and Eszter Piros.

Common publication venues for their work include IEEE Electron Device Letters, Solid-State Electronics, Micromachines, Materials, and IEEE Transactions on Nanotechnology.

In addition to journal articles, Jordi Suñé has contributed to academic books, including a publication with Springer Nature titled Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations released in 2021.

Jordi Suñé received the IEEE Fellow award in 2010 for contributions to the understanding of gate oxide failure and reliability methodology.

Best Publications

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Continuous analytic I-V model for surrounding-gate MOSFETs

    D. Jimenez;B. Iniguez;J. Sune;L.F. Marsal

  • On the breakdown statistics of very thin SiO2 films

    J. Suñé;I. Placencia;N. Barniol;E. Farrés

  • New physics-based analytic approach to the thin-oxide breakdown statistics

    J. Sune

  • Reliability Wearout Mechanisms in Advanced CMOS Technologies

    Alvin W. Strong;Ernest Y. Wu;Rolf-Peter Vollertsen;Jordi Sune

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

    Ernest Y. Wu;Jordi Suñé

  • Quantum-size effects in hafnium-oxide resistive switching

    Shibing Long;Xiaojuan Lian;Carlo Cagli;Xavier Cartoixà

  • Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

    Shibing Long;Luca Perniola;Carlo Cagli;Julien Buckley

  • Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

    Ernest Y. Wu;Jordi Suñé;Wing L. Lai;Edward J. Nowak

  • Modeling of nanoscale gate-all-around MOSFETs

    D. Jimenez;J.J. Saenz;B. Iniguez;J. Sune

  • Electron transport through broken down ultra-thin SiO2 layers in MOS devices

    Enrique Miranda;Enrique Miranda;Jordi Suñé

  • Cycle-to-Cycle Intrinsic RESET Statistics in ${ m HfO}_{2}$ -Based Unipolar RRAM Devices

    Shibing Long;Xiaojuan Lian;Tianchun Ye;Carlo Cagli

  • A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

    Shibing Long;Xiaojuan Lian;Carlo Cagli;Luca Perniola

  • Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides

    E.Y. Wu;A. Vayshenker;E. Nowak;J. Sune

  • Quantum-mechanical modeling of accumulation layers in MOS structure

    J. Sune;P. Olivo;B. Ricco

  • Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

    E. Miranda;J. Sune;R. Rodriguez;M. Nafria

  • On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions

    E.Y. Wu;J. Sune;W. Lai

  • Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/ films

    E. Miranda;J. Sune

  • Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor-insulator interfaces

    J. Suñé;P. Olivo;B. Riccó

Frequent Co-Authors

Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Ernest Y. Wu
Ernest Y. Wu IBM (United States)
Shibing Long
Shibing Long University of Science and Technology of China
Ming Liu
Ming Liu Fudan University
Montserrat Nafría
Montserrat Nafría Autonomous University of Barcelona
Ferran Martin
Ferran Martin Autonomous University of Barcelona
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Riccardo Rurali
Riccardo Rurali Institut de Ciència de Materials de Barcelona
Paul K. Hurley
Paul K. Hurley Tyndall National Institute
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology

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