The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Jordi Suñé sits on this spectrum.
This scientist: 330 publications — 81st percentile
81% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 804 publications or more.
The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Jordi Suñé sits on this spectrum.
This scientist: 55 D-Index — 70th percentile
70% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 107 D-Index or more.
Jordi Suñé is affiliated with the Autonomous University of Barcelona in Spain. The primary research fields include Engineering and Neuroscience, with significant contributions in Electrical and Electronic Engineering, Cellular and Molecular Neuroscience, and Cognitive Neuroscience among other subfields.
Their scholarly work has focused extensively on Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, Semiconductor materials and devices, Neural dynamics and brain function, CCD and CMOS Imaging Sensors, and stochastic dynamics and bifurcation.
Recent publications by Jordi Suñé include:
Jordi Suñé frequently collaborates with researchers such as E. Miranda, Fernando Aguirre, F. Campabadal, Mireia Bargalló González, and Eszter Piros.
Common publication venues for their work include IEEE Electron Device Letters, Solid-State Electronics, Micromachines, Materials, and IEEE Transactions on Nanotechnology.
In addition to journal articles, Jordi Suñé has contributed to academic books, including a publication with Springer Nature titled Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations released in 2021.
Jordi Suñé received the IEEE Fellow award in 2010 for contributions to the understanding of gate oxide failure and reliability methodology.
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini
D. Jimenez;B. Iniguez;J. Sune;L.F. Marsal
J. Suñé;I. Placencia;N. Barniol;E. Farrés
J. Sune
Alvin W. Strong;Ernest Y. Wu;Rolf-Peter Vollertsen;Jordi Sune
Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang
Ernest Y. Wu;Jordi Suñé
Shibing Long;Xiaojuan Lian;Carlo Cagli;Xavier Cartoixà
Shibing Long;Luca Perniola;Carlo Cagli;Julien Buckley
Ernest Y. Wu;Jordi Suñé;Wing L. Lai;Edward J. Nowak
D. Jimenez;J.J. Saenz;B. Iniguez;J. Sune
Enrique Miranda;Enrique Miranda;Jordi Suñé
Shibing Long;Xiaojuan Lian;Tianchun Ye;Carlo Cagli
Shibing Long;Xiaojuan Lian;Carlo Cagli;Luca Perniola
E.Y. Wu;A. Vayshenker;E. Nowak;J. Sune
J. Sune;P. Olivo;B. Ricco
E. Miranda;J. Sune;R. Rodriguez;M. Nafria
E.Y. Wu;J. Sune;W. Lai
E. Miranda;J. Sune
J. Suñé;P. Olivo;B. Riccó
If you think any of the details on this page are incorrect, let us know.
Korea Institute of Science and Technology
Chinese Academy of Sciences
Wageningen University & Research
Mario Negri Institute for Pharmacological Research
University of Maryland, College Park
Autonomous University of Madrid
National Institutes of Health
University of Nebraska–Lincoln
Graz University of Technology
Washington State University
University of Antwerp
University of California, Berkeley
University of Trieste
Bar-Ilan University
Peace Research Institute
International Union Against Tuberculosis and Lung Disease
