World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4671
World Ranking
5401
National Ranking
1860

Research.com Recognitions

  • 2015 - IEEE Fellow For contributions to semiconductor process technology to improve radiation hardening of MOS devices

Overview

John F. Conley is affiliated with Oregon State University in the United States, specializing in fields related to engineering and materials science. Their research output encompasses a range of topics primarily within electrical and electronic engineering and materials chemistry.

The main fields of study associated with John F. Conley include:

  • Engineering
  • Materials Science

Within these broad areas, their work focuses on several subfields such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Artificial Intelligence
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Their research addresses multiple scientific topics, which include:

  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Advanced Memory and Neural Computing
  • Neural Networks and Reservoir Computing
  • Ferroelectric and Negative Capacitance Devices
  • Electronic and Structural Properties of Oxides
  • MXene and MAX Phase Materials

John F. Conley has several frequent coauthors, indicating collaborative work in their research community:

  • Benjamin Kupp
  • Wei-Che Hsu
  • Nabila Nujhat
  • Konner E. K. Holden
  • Shane M. W. Witsell

Their frequent publication venues include:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Applied Physics
  • Conference on Lasers and Electro-Optics
  • Nature Communications
  • Behavioral Medicine

Representative recent papers authored or coauthored by John F. Conley are:

  • "Psychological and Physiological Predictors of Resilience in Navy SEAL Training," 2020, Behavioral Medicine
  • "On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array," 2023, Scientific Reports
  • "Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide," 2024, Nature Communications
  • "Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy," 2021, ACS Applied Materials & Interfaces
  • "Improved properties of atomic layer deposited ruthenium via postdeposition annealing," 2021, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

John F. Conley was named an IEEE Fellow in 2015 for contributions to semiconductor process technology aimed at improving radiation hardening of MOS devices.

Best Publications

  • Nanolaminate film atomic layer deposition method

    John F. Conley;Yoshi Ono;Rajendra Solanki

  • What can electron paramagnetic resonance tell us about the Si/SiO2 system?

    Patrick M. Lenahan;J. F. Conley

  • METHOD FOR DEPOSITING ATOMIC LAYER OF OXIDE THIN FILM TO DEPOSIT HAFNIUM OXIDE LAYER

    Conley John F;Ono Yoshi;Solanki Rajendra

  • Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

    J F Conley

  • Method for manufacturing structure of selective atomic layer deposition of zinc oxide

    John F Conley;David R Evans;Ono Yoshi;エフ.コンリー,ジュニア ジョン

  • METHOD FOR CONTROLLING INTERFACE LAYER FOR DEPOSITION OF HIGH DIELECTRIC CONSTANT FILM

    Conley Jr John F;Ono Yoshi

  • Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films

    John F. Conley;Yoshi Ono;Gregory M. Stecker

  • Advancing MIM Electronics: Amorphous Metal Electrodes

    E. William Cowell;Nasir Alimardani;Christopher C. Knutson;John F. Conley

  • Dielectrophoretically Controlled Fabrication of Single-Crystal Nickel Silicide Nanowire Interconnects

    Lifeng Dong;Jocelyn Bush;Vachara Chirayos;Raj Solanki

  • Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

    A. Y. Kang;P. M. Lenahan;J. F. Conley

  • Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

    J. F. Conley;P. M. Lenahan

  • Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate

    J. F. Conley;Y. Ono;W. Zhuang;D. J. Tweet

  • ZnO-nanoparticle-coated carbon nanotubes demonstrating enhanced electron field-emission properties

    Joshua M. Green;Lifeng Dong;Timothy Gutu;Jun Jiao

  • Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer

    J F Conley;L Stecker;Y Ono

  • Electron spin resonance evidence that E'/sub /spl gamma// centers can behave as switching oxide traps

    J.F. Conley;P.M. Lenahan;A.J. Lelis;T.R. Oldham

  • Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    Nasir Alimardani;Sean W. King;Benjamin L. French;Cheng Tan

  • Observation and electronic characterization of ‘‘new’’ E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping

    John F. Conley;Patrick M. Lenahan;H. L. Evans;R. K. Lowry

  • Atomic layer deposition of thin hafnium oxide films using a carbon free precursor

    J. F. Conley;Y. Ono;D. J. Tweet;W. Zhuang

  • The radiation response of the high dielectric-constant hafnium oxide/silicon system

    A.Y. Kang;P.M. Lenahan;J.F. Conley

  • METHOD OF DEPOSITING MULTIPLEX HIGH-K GATE DIELECTRIC FOR CMOS APPLICATION

    Conley Jr John F;Ono Yoshichika;Solanki Rajendra

  • Atomic layer deposition of two dimensional MoS2 on 150 mm substrates

    Arturo Valdivia;Douglas J. Tweet;John F. Conley

  • Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices

    J.F. Conley;P.M. Lenahan

  • Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers

    Nasir Alimardani;E. William Cowell;John F. Wager;John F. Conley

  • Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes

    N. Alimardani;J. F. Conley

  • Floating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties.

    Lifeng Dong;Vachara Chirayos;Jocelyn Bush;Jun Jiao

  • Directed integration of ZnO nanobridge devices on a Si substrate

    Unknown

  • Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

    A. Y. Kang;P. M. Lenahan;J. F. Conley;R. Solanki

  • Electron spin resonance study of E' trapping centers in SIMOX buried oxides

    J.F. Conley;P.M. Lenahan;P. Roitman

Frequent Co-Authors

Patrick M. Lenahan
Patrick M. Lenahan Pennsylvania State University
John F. Wager
John F. Wager Oregon State University
Jun Jiao
Jun Jiao Portland State University
Gregory S. Herman
Gregory S. Herman Oregon State University
Douglas A. Keszler
Douglas A. Keszler Oregon State University
Lifeng Dong
Lifeng Dong Hamline University
Madan Dubey
Madan Dubey United States Army Research Laboratory
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology

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