World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
36
Citations
4671
World Ranking
5401
National Ranking
1861

John F. Conley publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where John F. Conley sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 163 publications — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

John F. Conley D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where John F. Conley sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 36 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2015 - IEEE Fellow For contributions to semiconductor process technology to improve radiation hardening of MOS devices

Overview

John F. Conley is affiliated with Oregon State University in the United States, specializing in fields related to engineering and materials science. Their research output encompasses a range of topics primarily within electrical and electronic engineering and materials chemistry.

The main fields of study associated with John F. Conley include:

  • Engineering
  • Materials Science

Within these broad areas, their work focuses on several subfields such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Artificial Intelligence
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Their research addresses multiple scientific topics, which include:

  • Semiconductor materials and devices
  • Photonic and Optical Devices
  • Advanced Memory and Neural Computing
  • Neural Networks and Reservoir Computing
  • Ferroelectric and Negative Capacitance Devices
  • Electronic and Structural Properties of Oxides
  • MXene and MAX Phase Materials

John F. Conley has several frequent coauthors, indicating collaborative work in their research community:

  • Benjamin Kupp
  • Wei-Che Hsu
  • Nabila Nujhat
  • Konner E. K. Holden
  • Shane M. W. Witsell

Their frequent publication venues include:

  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Applied Physics
  • Conference on Lasers and Electro-Optics
  • Nature Communications
  • Behavioral Medicine

Representative recent papers authored or coauthored by John F. Conley are:

  • "Psychological and Physiological Predictors of Resilience in Navy SEAL Training," 2020, Behavioral Medicine
  • "On-chip wavelength division multiplexing filters using extremely efficient gate-driven silicon microring resonator array," 2023, Scientific Reports
  • "Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide," 2024, Nature Communications
  • "Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy," 2021, ACS Applied Materials & Interfaces
  • "Improved properties of atomic layer deposited ruthenium via postdeposition annealing," 2021, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

John F. Conley was named an IEEE Fellow in 2015 for contributions to semiconductor process technology aimed at improving radiation hardening of MOS devices.

Best Publications

  • Nanolaminate film atomic layer deposition method

    John F. Conley;Yoshi Ono;Rajendra Solanki

  • What can electron paramagnetic resonance tell us about the Si/SiO2 system?

    Patrick M. Lenahan;J. F. Conley

  • METHOD FOR DEPOSITING ATOMIC LAYER OF OXIDE THIN FILM TO DEPOSIT HAFNIUM OXIDE LAYER

    Conley John F;Ono Yoshi;Solanki Rajendra

  • Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

    J F Conley

  • Method for manufacturing structure of selective atomic layer deposition of zinc oxide

    John F Conley;David R Evans;Ono Yoshi;エフ.コンリー,ジュニア ジョン

  • METHOD FOR CONTROLLING INTERFACE LAYER FOR DEPOSITION OF HIGH DIELECTRIC CONSTANT FILM

    Conley Jr John F;Ono Yoshi

  • Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films

    John F. Conley;Yoshi Ono;Gregory M. Stecker

  • Advancing MIM Electronics: Amorphous Metal Electrodes

    E. William Cowell;Nasir Alimardani;Christopher C. Knutson;John F. Conley

  • Dielectrophoretically Controlled Fabrication of Single-Crystal Nickel Silicide Nanowire Interconnects

    Lifeng Dong;Jocelyn Bush;Vachara Chirayos;Raj Solanki

  • Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

    A. Y. Kang;P. M. Lenahan;J. F. Conley

  • Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon

    J. F. Conley;P. M. Lenahan

  • Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate

    J. F. Conley;Y. Ono;W. Zhuang;D. J. Tweet

  • ZnO-nanoparticle-coated carbon nanotubes demonstrating enhanced electron field-emission properties

    Joshua M. Green;Lifeng Dong;Timothy Gutu;Jun Jiao

  • Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer

    J F Conley;L Stecker;Y Ono

  • Electron spin resonance evidence that E'/sub /spl gamma// centers can behave as switching oxide traps

    J.F. Conley;P.M. Lenahan;A.J. Lelis;T.R. Oldham

  • Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

    Nasir Alimardani;Sean W. King;Benjamin L. French;Cheng Tan

  • Observation and electronic characterization of ‘‘new’’ E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping

    John F. Conley;Patrick M. Lenahan;H. L. Evans;R. K. Lowry

  • Atomic layer deposition of thin hafnium oxide films using a carbon free precursor

    J. F. Conley;Y. Ono;D. J. Tweet;W. Zhuang

  • The radiation response of the high dielectric-constant hafnium oxide/silicon system

    A.Y. Kang;P.M. Lenahan;J.F. Conley

  • METHOD OF DEPOSITING MULTIPLEX HIGH-K GATE DIELECTRIC FOR CMOS APPLICATION

    Conley Jr John F;Ono Yoshichika;Solanki Rajendra

  • Atomic layer deposition of two dimensional MoS2 on 150 mm substrates

    Arturo Valdivia;Douglas J. Tweet;John F. Conley

  • Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices

    J.F. Conley;P.M. Lenahan

  • Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers

    Nasir Alimardani;E. William Cowell;John F. Wager;John F. Conley

  • Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes

    N. Alimardani;J. F. Conley

  • Floating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties.

    Lifeng Dong;Vachara Chirayos;Jocelyn Bush;Jun Jiao

  • Directed integration of ZnO nanobridge devices on a Si substrate

    Unknown

  • Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

    A. Y. Kang;P. M. Lenahan;J. F. Conley;R. Solanki

  • Electron spin resonance study of E' trapping centers in SIMOX buried oxides

    J.F. Conley;P.M. Lenahan;P. Roitman

Frequent Co-Authors

Patrick M. Lenahan
Patrick M. Lenahan Pennsylvania State University
John F. Wager
John F. Wager Oregon State University
Jun Jiao
Jun Jiao Portland State University
Gregory S. Herman
Gregory S. Herman Oregon State University
Douglas A. Keszler
Douglas A. Keszler Oregon State University
Lifeng Dong
Lifeng Dong Hamline University
Madan Dubey
Madan Dubey United States Army Research Laboratory
John S. Suehle
John S. Suehle National Institute of Standards and Technology
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Eric M. Vogel
Eric M. Vogel Georgia Institute of Technology

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