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D-Index & Metrics

Materials Science

D-Index
57
Citations
17074
World Ranking
7848
National Ranking
1947

John F. Wager publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John F. Wager sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 247 publications — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

John F. Wager D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John F. Wager sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 57 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

John F. Wager is affiliated with Oregon State University in the United States. Their research primarily spans the fields of Engineering and Materials Science, with a significant focus on Electrical and Electronic Engineering and Materials Chemistry. The scientist's work covers subfields including Polymers and Plastics, Physical and Theoretical Chemistry, and Organic Chemistry.

Key research topics associated with John F. Wager include Thin-Film Transistor Technologies, ZnO doping and properties, Semiconductor materials and devices, Transition Metal Oxide Nanomaterials, Silicon and Solar Cell Technologies, Advancements in Semiconductor Devices and Circuit Design, and Surface Roughness and Optical Measurements.

Notable recent publications authored or co-authored by the scientist include:

  • "TFT Technology: Advancements and Opportunities for Improvement" (2020) published in Information Display
  • "Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors" (2022) published in Journal of Applied Physics
  • "Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction" (2023) published in Advanced Functional Materials
  • "New Perspective on Hydrogen Bonding" (2023) published in ACS Omega
  • "Thin-film transistor accumulation-mode modeling" (2022) published in Solid-State Electronics

Frequent co-authors collaborating with John F. Wager include:

  • Matt W. Graham
  • George W. Mattson
  • Kyle T. Vogt
  • M. Mattsson
  • Jared Parker

The scientist regularly publishes in venues such as ECS Meeting Abstracts, ACS Omega, arXiv (Cornell University), the Journal of the Society for Information Display, and the Journal of Applied Physics.

Best Publications

  • ZnO-based transparent thin-film transistors

    R. L. Hoffman;Benjamin J. Norris;J. F. Wager

  • Transistor structures and methods for making the same

    John F. Wager;Randy L. Hoffman

  • Applied physics. Transparent electronics.

    John F Wager

  • High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

    H. Q. Chiang;J. F. Wager;R. L. Hoffman;J. Jeong

  • Transparent Electronics

    John F. Wager;Douglas A. Keszler;Rick E. Presley

  • Transparent thin-film transistors with zinc indium oxide channel layer

    N. L. Dehuff;E. S. Kettenring;D. Hong;H. Q. Chiang

  • Tin oxide transparent thin-film transistors

    R. E. Presley;C. L. Munsee;C. H. Park;D. Hong

  • Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs

    Stephen T. Meyers;Jeremy T. Anderson;Celia M. Hung;John Thompson

  • Spin-coated zinc oxide transparent transistors

    B J Norris;J Anderson;J F Wager;D A Keszler

  • Transistor structures having a transparent channel

    John F. Wager;Randy L. Hoffman

  • p-Type oxides for use in transparent diodes

    J. Tate;M.K. Jayaraj;A.D. Draeseke;T. Ulbrich

  • Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors

    K. Hoshino;D. Hong;H.Q. Chiang;J.F. Wager

  • A method to form a passivation layer

    Randy Hoffman;John Wager;David Hong;Hai Chiang

  • An amorphous oxide semiconductor thin-film transistor route to oxide electronics

    John F. Wager;Bao Yeh;Randy L. Hoffman;Douglas A. Keszler

  • Transparent ring oscillator based on indium gallium oxide thin-film transistors

    R.E. Presley;D. Hong;H.Q. Chiang;C.M. Hung

  • Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors

    Hai Q. Chiang;Brian R. McFarlane;David Hong;Rick E. Presley

  • Iron Chalcogenide Photovoltaic Absorbers

    Liping Yu;Stephan Lany;Robert Kykyneshi;Vorranutch Jieratum

  • Advancing MIM Electronics: Amorphous Metal Electrodes

    E. William Cowell;Nasir Alimardani;Christopher C. Knutson;John F. Conley

  • Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics

    Stephen T. Meyers;Jeremy T. Anderson;David Hong;Celia M. Hung

  • Atomic model for the EL2 defect in GaAs

    J. F. Wager;J. A. Van Vechten

Frequent Co-Authors

Douglas A. Keszler
Douglas A. Keszler Oregon State University
John F. Conley
John F. Conley Oregon State University
Alex Zunger
Alex Zunger University of Colorado Boulder
Liping Yu
Liping Yu University of Colorado Denver
Gregory S. Herman
Gregory S. Herman Oregon State University
Stephan Lany
Stephan Lany National Renewable Energy Laboratory
Roger W. Whatmore
Roger W. Whatmore Imperial College London
John Robertson
John Robertson University of Cambridge
Shannon W. Boettcher
Shannon W. Boettcher University of Oregon
Madan Dubey
Madan Dubey United States Army Research Laboratory

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