Optoelectronics, Thin-film transistor, Amorphous solid, Transistor and Oxide thin-film transistor are his primary areas of study. His Optoelectronics research includes elements of Layer, Oxide, Amorphous oxide, Field-effect transistor and Amorphous silicon. His Thin-film transistor research is multidisciplinary, incorporating elements of Subthreshold conduction, Annealing, Semiconductor and Gate oxide.
Kenji Nomura combines subjects such as Thin film and Electrical resistivity and conductivity with his study of Semiconductor. His research integrates issues of Amorphous oxide semiconductor, Electronic structure, Mineralogy, Analytical chemistry and Effective mass in his study of Amorphous solid. His Transistor study integrates concerns from other disciplines, such as Plasma-enhanced chemical vapor deposition, Amorphous semiconductors, Electron mobility and Barrier layer.
Kenji Nomura mostly deals with Optoelectronics, Thin-film transistor, Amorphous solid, Transistor and Thin film. He is interested in Semiconductor, which is a field of Optoelectronics. His Thin-film transistor research includes themes of Electron mobility, Passivation, Amorphous oxide, Threshold voltage and Subthreshold conduction.
His study in Amorphous solid is interdisciplinary in nature, drawing from both Sputter deposition, Sputtering, Annealing, Electronic structure and Analytical chemistry. Within one scientific family, he focuses on topics pertaining to Nanotechnology under Transistor, and may sometimes address concerns connected to Oxide semiconductor. He has researched Thin film in several fields, including Composite material, Superlattice, Mineralogy and Epitaxy.
The scientist’s investigation covers issues in Optoelectronics, Thin-film transistor, Amorphous solid, Transistor and Annealing. The various areas that Kenji Nomura examines in his Optoelectronics study include Oxide, Amorphous oxide semiconductor, Oxide thin-film transistor and Electronic circuit. His biological study spans a wide range of topics, including Passivation, Semiconductor, Amorphous oxide and Voltage.
The study incorporates disciplines such as Flat panel display and Electronic structure in addition to Semiconductor. His Amorphous solid research incorporates themes from Indium, Thin film, Heterojunction, Analytical chemistry and Threshold voltage. His biological study focuses on Subthreshold slope.
His primary areas of investigation include Amorphous solid, Thin-film transistor, Inorganic chemistry, Optoelectronics and Annealing. The Amorphous solid study combines topics in areas such as Oxide, Indium, Electron spectroscopy, Oxygen-18 and Gallium. His work deals with themes such as Capacitance and Semiconductor, which intersect with Thin-film transistor.
His Inorganic chemistry research includes elements of Thin film, Sputtering, Amorphous oxide semiconductor and Ultra-high vacuum. The concepts of his Optoelectronics study are interwoven with issues in Threshold voltage, Excess oxygen and Amorphous oxide. His Annealing research incorporates themes from Passivation and Analytical chemistry.
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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya.
Nature (2004)
Amorphous oxide and thin film transistor
Hosono Hideo;Hirano Masahiro;Ota Hiromichi;Kamiya Toshio.
(2005)
Integrated circuits utilizing amorphous oxides
Abe Katsumi;Hosono Hideo;Kamiya Toshio;Nomura Kenji.
(2010)
Sensor and image pickup device
Hideo Hosono;Toshio Kamiya;Kenji Nomura;Keishi Saito.
(2005)
Amorphous oxide and field effect transistor
Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya.
(2005)
Field effect transistor manufacturing method
Hisato Yabuta;Masafumi Sano;Tatsuya Iwasaki;Hideo Hosono.
(2005)
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
Kenji Nomura;Hiromichi Ohta;Kazushige Ueda;Toshio Kamiya.
Science (2003)
Light-emitting device
Den Toru;Iwasaki Tatsuya;Hosono Hideo;Kamiya Toshio.
(2006)
Present status of amorphous In–Ga–Zn–O thin-film transistors
Toshio Kamiya;Kenji Nomura;Hideo Hosono.
Science and Technology of Advanced Materials (2010)
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba.
Applied Physics Letters (2006)
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