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D-Index
76
Citations
59193
World Ranking
3205
National Ranking
893

Overview

Kenji Nomura is affiliated with the University of California, San Diego in the United States. Their research largely focuses on engineering and materials science, contributing to various subfields including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, polymers and plastics, and biomedical engineering.

Their scholarly work centers on topics such as thin-film transistor technologies, ZnO doping and properties, semiconductor materials and devices, advanced memory and neural computing, transition metal oxide nanomaterials, ferroelectric and negative capacitance devices, and Ga2O3 and related materials.

Kenji Nomura has published in several scientific venues, with frequent contributions to:

  • ACS Applied Materials & Interfaces
  • Applied Physics Letters
  • ECS Meeting Abstracts
  • ACS Nano
  • ACS Applied Electronic Materials

Some of their recent notable publications include:

  • Recent progress of oxide-TFT-based inverter technology, 2021, Journal of Information Display
  • Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing, 2021, ACS Applied Materials & Interfaces
  • Vacuum-Free Liquid-Metal-Printed 2D Indium-Tin Oxide Thin-Film Transistor for Oxide Inverters, 2022, ACS Nano
  • Hydrogen-Defect Termination in SnO for p-Channel TFTs, 2020, ACS Applied Electronic Materials
  • Switching Mechanism behind the Device Operation Mode in SnO-TFT, 2020, Advanced Electronic Materials

Frequent collaborators in their research include:

  • Chi-Hsin Huang
  • Yong Zhang
  • Yalun Tang
  • Kosuke Matsuzaki
  • Yu-Lun Chueh

Best Publications

  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya

  • SEMICONDUCTOR DEVICE WITH AMORPHOUS OXIDE UTILIZED THEREIN

    Abe Katsumi;Hosono Hideo;Kamiya Toshio;Nomura Kenji

  • LCD AND ORGANIC EL DISPLAY

    Hosono Hideo;Hirano Masahiro;Ota Hiromichi;Kamiya Toshio

  • Amorphous oxide and field effect transistor

    Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya

  • Field effect transistor manufacturing method

    Hisato Yabuta;Masafumi Sano;Tatsuya Iwasaki;Hideo Hosono

  • Sensor and nonplanar imaging device

    Hideo Hosono;Toshio Kamiya;Kenji Nomura;Keishi Saito

  • Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

    Kenji Nomura;Hiromichi Ohta;Kazushige Ueda;Toshio Kamiya

  • Present status of amorphous In–Ga–Zn–O thin-film transistors

    Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

    Kenji Nomura;Akihiro Takagi;Toshio Kamiya;Hiromichi Ohta

  • High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

    Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba

  • Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

    Kenji Nomura;Toshio Kamiya;Hiromichi Ohta;Kazushige Ueda

  • Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3

    Hiromichi Ohta;Hiromichi Ohta;SungWng Kim;Yoriko Mune;Teruyasu Mizoguchi

  • P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States

    Hsing-Hung Hsieh;Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs

    Ryo Hayashi;Ayumu Sato;Masato Ofuji;Katsumi Abe

  • Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

    T. Kamiya;K. Nomura;H. Hosono

  • Amorphous oxide and electric field effect transistor

    Hideo Hosono;Toshio Kamiya;Katsumi Nakagawa;Kenji Nomura

  • p-channel thin-film transistor using p-type oxide semiconductor, SnO

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

    Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi

  • Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Hiroshi Yanagi;Eiji Ikenaga

Frequent Co-Authors

Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Hiroshi Yanagi
Hiroshi Yanagi University of Yamanashi
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Yuichi Ikuhara
Yuichi Ikuhara University of Tokyo
Kazushige Ueda
Kazushige Ueda Kyushu Institute of Technology
Kunihito Koumoto
Kunihito Koumoto Nagoya University
Ryo Hayashi
Ryo Hayashi Canon (Japan)

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