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D-Index & Metrics

Materials Science

D-Index
76
Citations
59193
World Ranking
3203
National Ranking
891

Kenji Nomura publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kenji Nomura sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 239 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kenji Nomura D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kenji Nomura sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Kenji Nomura is affiliated with the University of California, San Diego in the United States. Their research largely focuses on engineering and materials science, contributing to various subfields including electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, polymers and plastics, and biomedical engineering.

Their scholarly work centers on topics such as thin-film transistor technologies, ZnO doping and properties, semiconductor materials and devices, advanced memory and neural computing, transition metal oxide nanomaterials, ferroelectric and negative capacitance devices, and Ga2O3 and related materials.

Kenji Nomura has published in several scientific venues, with frequent contributions to:

  • ACS Applied Materials & Interfaces
  • Applied Physics Letters
  • ECS Meeting Abstracts
  • ACS Nano
  • ACS Applied Electronic Materials

Some of their recent notable publications include:

  • Recent progress of oxide-TFT-based inverter technology, 2021, Journal of Information Display
  • Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing, 2021, ACS Applied Materials & Interfaces
  • Vacuum-Free Liquid-Metal-Printed 2D Indium-Tin Oxide Thin-Film Transistor for Oxide Inverters, 2022, ACS Nano
  • Hydrogen-Defect Termination in SnO for p-Channel TFTs, 2020, ACS Applied Electronic Materials
  • Switching Mechanism behind the Device Operation Mode in SnO-TFT, 2020, Advanced Electronic Materials

Frequent collaborators in their research include:

  • Chi-Hsin Huang
  • Yong Zhang
  • Yalun Tang
  • Kosuke Matsuzaki
  • Yu-Lun Chueh

Best Publications

  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    Kenji Nomura;Hiromichi Ohta;Akihiro Takagi;Toshio Kamiya

  • SEMICONDUCTOR DEVICE WITH AMORPHOUS OXIDE UTILIZED THEREIN

    Abe Katsumi;Hosono Hideo;Kamiya Toshio;Nomura Kenji

  • LCD AND ORGANIC EL DISPLAY

    Hosono Hideo;Hirano Masahiro;Ota Hiromichi;Kamiya Toshio

  • Amorphous oxide and field effect transistor

    Masafumi Sano;Katsumi Nakagawa;Hideo Hosono;Toshio Kamiya

  • Field effect transistor manufacturing method

    Hisato Yabuta;Masafumi Sano;Tatsuya Iwasaki;Hideo Hosono

  • Sensor and nonplanar imaging device

    Hideo Hosono;Toshio Kamiya;Kenji Nomura;Keishi Saito

  • Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

    Kenji Nomura;Hiromichi Ohta;Kazushige Ueda;Toshio Kamiya

  • Present status of amorphous In–Ga–Zn–O thin-film transistors

    Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

    Kenji Nomura;Akihiro Takagi;Toshio Kamiya;Hiromichi Ohta

  • High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

    Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba

  • Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films

    Kenji Nomura;Toshio Kamiya;Hiromichi Ohta;Kazushige Ueda

  • Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3

    Hiromichi Ohta;Hiromichi Ohta;SungWng Kim;Yoriko Mune;Teruyasu Mizoguchi

  • P‐29: Modeling of Amorphous Oxide Semiconductor Thin Film Transistors and Subgap Density of States

    Hsing-Hung Hsieh;Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs

    Ryo Hayashi;Ayumu Sato;Masato Ofuji;Katsumi Abe

  • Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

    T. Kamiya;K. Nomura;H. Hosono

  • Amorphous oxide and electric field effect transistor

    Hideo Hosono;Toshio Kamiya;Katsumi Nakagawa;Kenji Nomura

  • p-channel thin-film transistor using p-type oxide semiconductor, SnO

    Yoichi Ogo;Hidenori Hiramatsu;Kenji Nomura;Hiroshi Yanagi

  • Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

    Hsing-Hung Hsieh;Toshio Kamiya;Kenji Nomura;Hideo Hosono

  • Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    Akihiro Takagi;Kenji Nomura;Hiromichi Ohta;Hiromichi Ohta;Hiroshi Yanagi

  • Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura;Toshio Kamiya;Hiroshi Yanagi;Eiji Ikenaga

Frequent Co-Authors

Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Hiromichi Ohta
Hiromichi Ohta Hokkaido University
Hiroshi Yanagi
Hiroshi Yanagi University of Yamanashi
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Hidenori Hiramatsu
Hidenori Hiramatsu Tokyo Institute of Technology
Yuichi Ikuhara
Yuichi Ikuhara University of Tokyo
Kazushige Ueda
Kazushige Ueda Kyushu Institute of Technology
Kunihito Koumoto
Kunihito Koumoto Nagoya University
Ryo Hayashi
Ryo Hayashi Canon (Japan)

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