World's Best Scientists 2026 revealed!
Ryo Hayashi

Ryo Hayashi

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
8477
World Ranking
5036
National Ranking
206

Ryo Hayashi publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Ryo Hayashi sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 91 publications — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Ryo Hayashi D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Ryo Hayashi sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 37 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Ryo Hayashi is a researcher affiliated with Canon (Japan) based in Japan. Their work primarily focuses on the fields of engineering, with a strong emphasis on mechanical engineering, health sciences, and biomedical engineering. This multidisciplinary approach is reflected in their publication record and research interests.

The main fields of study for Hayashi include:

  • Engineering

Subfields notably encompass:

  • Mechanical Engineering
  • General Health Professions
  • Health
  • Biomedical Engineering
  • Polymers and Plastics

Their research topics cover a range of technical and health-related themes, including:

  • Advanced Materials and Mechanics
  • Health Literacy and Information Accessibility
  • Social Media in Health Education
  • Mobile Health and mHealth Applications
  • Dielectric materials and actuators
  • Polymer composites and self-healing

Hayashi's recent papers demonstrate an interest in both engineering applications and health sciences. These include:

  • Sensorless Torque Control of a Twisted Polymeric Fiber Actuator, 2020, The Proceedings of JSME annual Conference on Robotics and Mechatronics (Robomec)
  • Conceptual Analysis of Capability in Health Sciences, 2021, Journal of Japan Academy of Nursing Science
  • Sensorless Torque Control for Antagonistically Arranged Rotational-Type Twisted Polymeric Fiber Actuators, 2021, The Proceedings of JSME annual Conference on Robotics and Mechatronics (Robomec)
  • Antagonistic Total Torque Control of Rotational Straight Twisted Polymeric Fiber Actuator, 2023, Journal of the Robotics Society of Japan

The venues where Hayashi frequently publishes include:

  • The Proceedings of JSME annual Conference on Robotics and Mechatronics (Robomec)
  • Journal of Japan Academy of Nursing Science
  • Journal of the Robotics Society of Japan

Collaborations have been an aspect of Hayashi's research activity, with frequent coauthors including:

  • Kenji Tahara
  • Yutaro Yoshida
  • Masato Iwasaki
  • Miyuki Nishida
  • Ken Masuya

Through this sustained output in both practical engineering challenges and health sciences, Hayashi's work spans advanced actuator mechanisms with polymeric fiber materials, as well as health-related conceptual analyses. This combination reflects a cross-disciplinary engagement integrating technology and societal health concerns.

Best Publications

  • Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

    Ryo Hayashi;Masafumi Sano;Katsumi Abe;Hideya Kumomi

  • Field-effect transistor and method for manufacturing the same

    Ayanori Endo;Ryo Hayashi;Tatsuya Iwasaki

  • 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs

    Ryo Hayashi;Ayumu Sato;Masato Ofuji;Katsumi Abe

  • Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

    Hisato Yabuta;Nobuyuki Kaji;Ryo Hayashi;Hideya Kumomi

  • Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

    Ayumu Sato;Katsumi Abe;Ryo Hayashi;Hideya Kumomi

  • Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O

    Ryo Hayashi;Masato Ofuji;Nobuyuki Kaji;Kenji Takahashi

  • Method for manufacturing thin film transistor using oxide semiconductor and display apparatus

    Hideyuki Omura;Ryo Hayashi;Nobuyuki Kaji;Hisato Yabuta

  • Thin film transistor and method of manufacturing the same

    Ayumu Sato;Ryo Hayashi;Hisato Yabuta;Masafumi Sano

  • Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

    M. Ofuji;K. Abe;H. Shimizu;N. Kaji

  • Thin-film transistor and display device oxide semiconductor and gate dielectric having an oxygen concentration gradient

    Ryo Hayashi;Katsumi Abe;Masafumi Sano

  • Photovoltaic element and fabrication process thereof

    Ryo Hayashi;Yasushi Fujioka;Shotaro Okabe;Masahiro Kanai

  • Method for manufacturing field-effect transistor

    Ryo Hayashi;Hisato Yabuta;Yoshinori Tateishi;Nobuyuki Kaji

  • Amorpher Oxid-Halbleiter und diesen verwendenden Dünnschichttransistor

    Ryo Hayashi;Hideya Kumomi;Hideyuki Omura;Yuzo Shigesato

  • Electron device using oxide semiconductor and method of manufacturing the same

    Ryo Hayashi;Masafumi Sano

  • Thin-film transistor and method of manufacturing same

    Nobuyuki Kaji;Ryo Hayashi;Hisato Yabuta;Katsumi Abe

  • Production method of thin film transistor using amorphous oxide semiconductor film

    Naho Itagaki;Toru Den;Nobuyuki Kaji;Ryo Hayashi

  • Method of treating semiconductor element

    Masato Ofuji;Katsumi Abe;Hisae Shimizu;Ryo Hayashi

  • Thin-film transistor fabrication process and display device

    Masafumi Sano;Ryo Hayashi

  • Thin film transistor

    Ayumu Sato;歩 佐藤;Hideya Kumomi;日出也 雲見

  • Amorphous In–Ga–Zn-O thin-film transistor with coplanar homojunction structure

    Ayumu Sato;Mikio Shimada;Katsumi Abe;Ryo Hayashi

  • Method for controlling threshold voltage of semiconductor element

    Masato Ofuji;Yasuyoshi Takai;Takehiko Kawasaki;Norio Kaneko

Frequent Co-Authors

Toshio Kamiya
Toshio Kamiya Tokyo Institute of Technology
Kenji Nomura
Kenji Nomura University of California, San Diego
Hideo Hosono
Hideo Hosono Tokyo Institute of Technology
Yuzo Shigesato
Yuzo Shigesato Aoyama Gakuin University
Masahiro Hirano
Masahiro Hirano Tokyo Institute of Technology
Akihisa Matsuda
Akihisa Matsuda National Institute of Advanced Industrial Science and Technology
Michio Kondo
Michio Kondo Waseda University

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