D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 31 Citations 7,802 79 World Ranking 4510 National Ranking 198

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Layer
  • Electrical engineering

Ryo Hayashi mostly deals with Optoelectronics, Thin-film transistor, Layer, Transistor and Oxide semiconductor. The Optoelectronics study combines topics in areas such as Oxide, Electronic engineering and Sputtering. The study incorporates disciplines such as Annealing, Plasma-enhanced chemical vapor deposition, Substrate and Sputter deposition in addition to Thin-film transistor.

The concepts of his Layer study are interwoven with issues in Wide-bandgap semiconductor and Homojunction. His study on Field-effect transistor and Oxide thin-film transistor is often connected to Environmental stability as part of broader study in Transistor. His Field-effect transistor study combines topics in areas such as Electrical resistance and conductance and Gate oxide.

His most cited work include:

  • Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor (1054 citations)
  • Field-effect transistor and method for manufacturing the same (1023 citations)
  • 42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs (900 citations)

What are the main themes of his work throughout his whole career to date?

Ryo Hayashi mainly investigates Optoelectronics, Thin-film transistor, Layer, Semiconductor and Electrical engineering. Ryo Hayashi has researched Optoelectronics in several fields, including Substrate, Transistor, Voltage and Electronic engineering. His work on Field-effect transistor as part of general Transistor study is frequently linked to Auxiliary electrode, therefore connecting diverse disciplines of science.

His work carried out in the field of Thin-film transistor brings together such families of science as Oxide, Annealing and Gate oxide. His Layer research is multidisciplinary, incorporating perspectives in Photovoltaic system and Oxide semiconductor. His study looks at the relationship between Semiconductor and topics such as Wavelength, which overlap with Intensity.

He most often published in these fields:

  • Optoelectronics (79.79%)
  • Thin-film transistor (47.87%)
  • Layer (39.36%)

What were the highlights of his more recent work (between 2009-2012)?

  • Optoelectronics (79.79%)
  • Semiconductor (34.04%)
  • Thin-film transistor (47.87%)

In recent papers he was focusing on the following fields of study:

Ryo Hayashi mainly focuses on Optoelectronics, Semiconductor, Thin-film transistor, Layer and Electrical engineering. The concepts of his Optoelectronics study are interwoven with issues in Electronic engineering, Semiconductor device, Oxide and Voltage. He works mostly in the field of Semiconductor, limiting it down to topics relating to Transistor and, in certain cases, Electrical conductor, as a part of the same area of interest.

His studies in Thin-film transistor integrate themes in fields like Thin film, Sputter deposition and Crystallite. His study in Gate oxide and Substrate falls under the purview of Layer. As part of the same scientific family, Ryo Hayashi usually focuses on Gate oxide, concentrating on Gate dielectric and intersecting with Metal gate.

Between 2009 and 2012, his most popular works were:

  • Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits (159 citations)
  • DC sputter deposition of amorphous indium–gallium–zinc–oxide (a-IGZO) films with H2O introduction (44 citations)
  • Method of driving transistor and device including transistor driven by the method (36 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Layer

His main research concerns Optoelectronics, Thin-film transistor, Layer, Sputter deposition and Transistor. A large part of his Optoelectronics studies is devoted to Electron mobility. Thin-film transistor and Oxide are frequently intertwined in his study.

His Layer study frequently draws connections between adjacent fields such as Electrical engineering. His Sputter deposition research includes elements of Physical vapor deposition, Deposition and Electrical resistivity and conductivity. The study incorporates disciplines such as Electrical conductor and Semiconductor in addition to Transistor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

Ryo Hayashi;Masafumi Sano;Katsumi Abe;Hideya Kumomi.
(2006)

1671 Citations

Field-effect transistor and method for manufacturing the same

Ayanori Endo;Ryo Hayashi;Tatsuya Iwasaki.
(2008)

1636 Citations

42.1: Invited Paper: Improved Amorphous In‐Ga‐Zn‐O TFTs

Ryo Hayashi;Ayumu Sato;Masato Ofuji;Katsumi Abe.
SID Symposium Digest of Technical Papers (2008)

943 Citations

Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits

Hisato Yabuta;Nobuyuki Kaji;Ryo Hayashi;Hideya Kumomi.
Applied Physics Letters (2010)

271 Citations

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

Ayumu Sato;Katsumi Abe;Ryo Hayashi;Hideya Kumomi.
Applied Physics Letters (2009)

236 Citations

Method for manufacturing thin film transistor using oxide semiconductor and display apparatus

Hideyuki Omura;Ryo Hayashi;Nobuyuki Kaji;Hisato Yabuta.
(2007)

185 Citations

Oxide semiconductor device including insulating layer and display apparatus using the same

Ayumu Sato;Ryo Hayashi;Hisato Yabuta;Tomohiro Watanabe.
(2008)

184 Citations

Thin film transistor and method of manufacturing the same

Ayumu Sato;Ryo Hayashi;Hisato Yabuta;Masafumi Sano.
(2009)

182 Citations

Circuits using uniform TFTs based on amorphous In‐Ga‐Zn‐O

Ryo Hayashi;Masato Ofuji;Nobuyuki Kaji;Kenji Takahashi.
Journal of The Society for Information Display (2007)

180 Citations

Thin-film transistor and display device oxide semiconductor and gate dielectric having an oxygen concentration gradient

Ryo Hayashi;Katsumi Abe;Masafumi Sano.
(2007)

156 Citations

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