1998 - Fellow of American Physical Society (APS) Citation For contributions to understanding of device physics and for innovations in small electronics and optical devices with strong quantum confinement
1994 - IEEE Fellow For contributions to heterostructure devices.
His main research concerns Optoelectronics, Transistor, Silicon, Heterojunction and Nanotechnology. The Optoelectronics study combines topics in areas such as Layer, Field-effect transistor and Electrical engineering, Voltage. His biological study spans a wide range of topics, including Molecular beam epitaxy, Capacitor, Electronic engineering and Analytical chemistry.
His Silicon research includes themes of Dram, Oxide and Semiconductor device. His Heterojunction research is multidisciplinary, relying on both Semimetal, Band gap, Schottky diode, Bipolar junction transistor and Mineralogy. Sandip Tiwari combines subjects such as Light emission, Photodetector, Capacitance, Quantum tunnelling and Coulomb blockade with his study of Nanotechnology.
His primary scientific interests are in Optoelectronics, Transistor, Electrical engineering, Silicon and Electronic engineering. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor and Threshold voltage. He is involved in the study of Transistor that focuses on MOSFET in particular.
His studies examine the connections between Silicon and genetics, as well as such issues in Nanotechnology, with regards to Quantum tunnelling. His Electronic engineering study incorporates themes from Silicon on insulator and Integrated circuit. His Heterojunction research focuses on Bipolar junction transistor and how it relates to Common emitter.
Optoelectronics, Nanotechnology, Graphene, Electrical engineering and Silicon are his primary areas of study. His Photodetector study, which is part of a larger body of work in Optoelectronics, is frequently linked to Low-power electronics, bridging the gap between disciplines. His Nanotechnology study combines topics in areas such as Raman spectroscopy and Microscopy.
His studies in Graphene integrate themes in fields like Composite material, Electron mobility and Plasmon. His study explores the link between Silicon and topics such as Nanowire that cross with problems in Etching, Kelvin probe force microscope, Conductive atomic force microscopy and Local oxidation nanolithography. The Oxide study combines topics in areas such as Aluminium, Quantum tunnelling and Analytical chemistry.
His primary areas of investigation include Exciton, Graphene, Biexciton, Atomic physics and Scattering. In his research, Microstructure, Coupling and Frequency dispersion is intimately related to Plasmon, which falls under the overarching field of Graphene. His work investigates the relationship between Biexciton and topics such as Picosecond that intersect with problems in Photon, Dephasing, Nanosecond and Trion.
His research in the fields of Auger overlaps with other disciplines such as Annihilation. Sandip Tiwari interconnects Light emission, Photodetector, Photodetection, Monolayer and Absorption in the investigation of issues within Scattering. His work deals with themes such as Nanotechnology and Molybdenum disulfide, which intersect with Optoelectronics.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A silicon nanocrystals based memory
Sandip Tiwari;Farhan Rana;Hussein Hanafi;Allan Hartstein.
Applied Physics Letters (1996)
A silicon nanocrystals based memory
Sandip Tiwari;Farhan Rana;Hussein Hanafi;Allan Hartstein.
Applied Physics Letters (1996)
Fast and long retention-time nano-crystal memory
H.I. Hanafi;S. Tiwari;I. Khan.
IEEE Transactions on Electron Devices (1996)
Fast and long retention-time nano-crystal memory
H.I. Hanafi;S. Tiwari;I. Khan.
IEEE Transactions on Electron Devices (1996)
Single charge and confinement effects in nano-crystal memories
Sandip Tiwari;Farhan Rana;Kevin Chan;Leathen Shi.
Applied Physics Letters (1996)
Single charge and confinement effects in nano-crystal memories
Sandip Tiwari;Farhan Rana;Kevin Chan;Leathen Shi.
Applied Physics Letters (1996)
Method for making three dimensional circuit integration
블랙 찰스 토마스;버가츠 조침 노버트;타이워리 산딥;웰서 제프리 존.
(1997)
Volatile and non-volatile memories in silicon with nano-crystal storage
S. Tiwari;F. Rana;K. Chan;H. Hanafi.
international electron devices meeting (1995)
Volatile and non-volatile memories in silicon with nano-crystal storage
S. Tiwari;F. Rana;K. Chan;H. Hanafi.
international electron devices meeting (1995)
Bridging the processor-memory performance gap with 3D IC technology
C.C. Liu;I. Ganusov;M. Burtscher;Sandip Tiwari.
IEEE Design & Test of Computers (2005)
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