World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
44
Citations
11881
World Ranking
3655
National Ranking
1335

Materials Science

D-Index
44
Citations
11778
World Ranking
11911
National Ranking
2761

Research.com Recognitions

  • 1998 - Fellow of American Physical Society (APS) Citation For contributions to understanding of device physics and for innovations in small electronics and optical devices with strong quantum confinement
  • 1994 - IEEE Fellow For contributions to heterostructure devices.

Overview

Sandip Tiwari is affiliated with Cornell University in the United States, focusing on engineering disciplines with a primary emphasis on electrical and electronic engineering. Their research spans several subfields including computer networks and communications, biomedical engineering, and aerospace engineering.

Their work frequently addresses topics related to the Internet of Things (IoT), especially concerning IoT networks and protocols and IoT and edge/fog computing. Other significant topics in their portfolio include molecular communication and nanonetworks, wireless body area networks, antenna design and analysis, microwave engineering and waveguides, and energy harvesting in wireless networks.

Recent publications illustrate this diversity and include the following papers:

  • Energy-Efficient and QoS-Aware Data Transfer in Q-Learning-Based Small-World LPWANs (2023), published in IEEE Internet of Things Journal
  • Optimal Routing Protocol in LPWAN Using SWC: A Novel Reinforcement Learning Framework (2024), published in IEEE Sensors Journal
  • Review Paper on NextGen Banking: A Secure and Scalable Banking System (2025), published in International Journal for Research in Applied Science and Engineering Technology
  • A novel quad port SWB MIMO antenna with common grounded decoupler (2025), published in Physica Scripta

Sandip Tiwari has collaborated frequently with several researchers, among them:

  • Naga Srinivasarao Chilamkurthy
  • Anirban Ghosh
  • Om Jee Pandey
  • Linga Reddy Cenkeramaddi
  • Shaik Abdul Hakeem

Their work has been disseminated through various publication venues, notably:

  • IEEE Internet of Things Journal
  • IEEE Sensors Journal
  • International Journal for Research in Applied Science and Engineering Technology
  • Physica Scripta

In recognition of their contributions, Sandip Tiwari has received distinctions including the IEEE Fellow status in 1994 for work related to heterostructure devices. They were also named a Fellow of the American Physical Society in 1998 for contributions to the understanding of device physics and innovations in small electronics and optical devices with strong quantum confinement.

Best Publications

  • A silicon nanocrystals based memory

    Sandip Tiwari;Farhan Rana;Hussein Hanafi;Allan Hartstein

  • Fast and long retention-time nano-crystal memory

    H.I. Hanafi;S. Tiwari;I. Khan

  • Single charge and confinement effects in nano-crystal memories

    Sandip Tiwari;Farhan Rana;Kevin Chan;Leathen Shi

  • Volatile and non-volatile memories in silicon with nano-crystal storage

    S. Tiwari;F. Rana;K. Chan;H. Hanafi

  • Bridging the processor-memory performance gap with 3D IC technology

    C.C. Liu;I. Ganusov;M. Burtscher;Sandip Tiwari

  • Nano-structure memory device

    Wei Chen;Theoren Perlee Smith;Sandip Tiwari

  • Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

    G.L. Patton;S.S. Iyer;S.L. Delage;S. Tiwari

  • Empirical fit to band discontinuities and barrier heights in III–V alloy systems

    Sandip Tiwari;David J. Frank

  • Self‐consistent modeling of accumulation layers and tunneling currents through very thin oxides

    Farhan Rana;Sandip Tiwari;D. A. Buchanan

  • Room temperature operation of a quantum-dot flash memory

    J.J. Welser;S. Tiwari;S. Rishton;K.Y. Lee

  • Low temperature semiconductor layering and three-dimensional electronic circuits using the layering

    Sandip Tiwari

  • Radiative lifetimes of excitons and trions in monolayers of the metal dichalcogenide MoS 2

    Haining Wang;Changjian Zhang;Weimin Chan;Christina Manolatou

  • Unpinned GaAs MOS capacitors and transistors

    S. Tiwari;S.L. Wright;J. Batey

  • Mixing at 50GHz using a single-walled carbon nanotube transistor

    Sami Rosenblatt;Hao Lin;Vera Sazonova;Sandip Tiwari

  • Ultrafast response of monolayer molybdenum disulfide photodetectors

    Haining Wang;Changjian Zhang;Weimin Chan;Sandip Tiwari

  • Back-plane for semiconductor device

    Kevin Kok Chan;Christopher Peter D'Emic;Erin Catherine Jones;Paul Michael Solomon

  • Patterned SOI regions on semiconductor chips

    Bijan Davari;Devendra Kumar Sadana;Ghavam G. Shahidi;Sandip Tiwari

  • Compound semiconductor device physics

    Sandip Tiwari

  • Low-Energy Truly Random Number Generation with Superparamagnetic Tunnel Junctions for Unconventional Computing

    D. Vodenicarevic;N. Locatelli;A. Mizrahi;J. S. Friedman

  • Analysis of the operation of GaAlAs/GaAs HBTs

    S. Tiwari;D.J. Frank

Frequent Co-Authors

Kevin K. Chan
Kevin K. Chan IBM (United States)
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
David J. Frank
David J. Frank IBM (United States)
Thomas N. Jackson
Thomas N. Jackson Pennsylvania State University
Paul M. Solomon
Paul M. Solomon IBM (United States)
Paul L. McEuen
Paul L. McEuen Cornell University
Michael G. Spencer
Michael G. Spencer Cornell University
Mark C. Reuter
Mark C. Reuter IBM (United States)
Lester F. Eastman
Lester F. Eastman Cornell University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute

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