World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
7432
World Ranking
4841
National Ranking
1696

David B. Janes publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where David B. Janes sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 226 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

David B. Janes D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where David B. Janes sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

David B. Janes is affiliated with Purdue University West Lafayette in the United States. Their research spans multiple areas within materials science and engineering, with a focus on 2D materials and applications, graphene research, and various advanced material systems.

Their main fields of study include:

  • Materials Science
  • Engineering
  • Environmental Science

Within these fields, their work touches on subfields such as:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Environmental Engineering
  • Pollution

The primary topics covered in their publications are:

  • 2D Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Ferroelectric and Negative Capacitance Devices
  • Air Quality Monitoring and Forecasting
  • Gas Sensing Nanomaterials and Sensors
  • Smart Materials for Construction

David B. Janes has contributed to research published in several scientific venues. These frequent publication venues are:

  • physica status solidi (a)
  • Journal of Applied Physics
  • IEEE Sensors Journal

Recent papers authored or co-authored by David B. Janes include:

  • Molybdenum Contacts to MoS2 Field-Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low-Frequency Noise (2020, physica status solidi (a))
  • Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors (2020, Journal of Applied Physics)
  • Development of Interdigitated Capacitive Sensor for Real-Time Monitoring of Sub-Micron and Nanoscale Particulate Matters in Personal Sampling Device for Mining Environment (2020, IEEE Sensors Journal)

Their frequent co-authors include:

  • Jiseok Kwon
  • Collin Delker
  • Charles Thomas Harris
  • Suprem R. Das
  • Doosan Back

Best Publications

  • Self-Assembly of a Two-Dimensional Superlattice of Molecularly Linked Metal Clusters

    Ronald P. Andres;Jeffery D. Bielefeld;Jason I. Henderson;David B. Janes

  • Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

    Sanghyun Ju;Antonio Facchetti;Yi Xuan;Jun Liu

  • A Hierarchical Manifold Microchannel Heat Sink Array for High-Heat-Flux Two-Phase Cooling of Electronics

    Kevin P. Drummond;Doosan Back;Michael D. Sinanis;David B. Janes

  • Co-Percolating Graphene-Wrapped Silver Nanowire Network for High Performance, Highly Stable, Transparent Conducting Electrodes

    Ruiyi Chen;Ruiyi Chen;Suprem R. Das;Changwook Jeong;Mohammad Ryyan Khan

  • Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry.

    Sanghyun Ju;Jianfeng Li;Jun Liu;Po Chiang Chen

  • Low Operating Voltage Single ZnO Nanowire Field-Effect Transistors Enabled by Self-Assembled Organic Gate Nanodielectrics

    Sanghyun Ju;Kangho Lee;David B. Janes;Myung Han Yoon

  • Role of Molecular Surface Passivation in Electrical Transport Properties of InAs Nanowires

    Qingling Hang;Fudong Wang;Patrick D. Carpenter;Dmitri Zemlyanov

  • Collective computational activity in self-assembled arrays of quantum dots: a novel neuromorphic architecture for nanoelectronics

    V.P. Roychowdhury;D.B. Janes;S. Bandyopadhyay;Xiaodong Wang

  • Indium selenide nanowire phase-change memory

    Bin Yu;Sanghyun Ju;Xuhui Sun;Garrick Ng

  • High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

    Sanghyun Ju;Kangho Lee;Myung Han Yoon;Antonio Facchetti

  • Gold surface with sub-nm roughness realized by evaporation on a molecular adhesion monolayer

    Ajit K. Mahapatro;Adina Scott;Allene Manning;David B. Janes

  • Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements

    Sanghyun Ju;Sunkook Kim;Saeed Mohammadi;David B. Janes

  • Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems

    M. R. Melloch;D. D. Nolte;J. M. Woodall;J. C. P. Chang

  • Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes.

    Sunkook Kim;Sanghyun Ju;Ju Hee Back;Yi Xuan

  • Nanoelectronic architecture for Boolean logic

    V.P. Roychowdhury;D.B. Janes;S. Bandyopadhyay

  • 1∕f noise of SnO2 nanowire transistors

    Sanghyun Ju;Pochiang Chen;Chongwu Zhou;Young Geun Ha

  • Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

    Takhee Lee;Jia Liu;Nien-Po Chen;R.P. Andres

  • Device considerations for development of conductance-based biosensors

    Kangho Lee;Pradeep R. Nair;Adina Scott;Muhammad A. Alam

  • Spectroscopic Properties of Colloidal Indium Phosphide Quantum Wires

    Fudong Wang;Heng Yu;Jingbo Li;Qingling Hang

  • Device structure for electronic transport through individual molecules using nanoelectrodes

    Subhasis Ghosh;Henny Halimun;Ajit Kumar Mahapatro;Jaewon Choi

  • Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.

    Yanjie Zhao;Drew Candebat;Collin J. Delker;Yunlong Zi

  • Design, Fabrication, and Characterization of a Compact Hierarchical Manifold Microchannel Heat Sink Array for Two-Phase Cooling

    Doosan Back;Kevin P. Drummond;Michael D. Sinanis;Justin A. Weibel

  • Nanometer scale electrode separation (nanogap) using electromigration at room temperature

    A.K. Mahapatro;S. Ghosh;D.B. Janes

Frequent Co-Authors

Michael R. Melloch
Michael R. Melloch Purdue University West Lafayette
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Saurabh Lodha
Saurabh Lodha Indian Institute of Technology Bombay
Tobin J. Marks
Tobin J. Marks Northwestern University
Muhammad A. Alam
Muhammad A. Alam Purdue University West Lafayette
Kaushik Roy
Kaushik Roy Purdue University West Lafayette
Clifford P. Kubiak
Clifford P. Kubiak University of California, San Diego
Takhee Lee
Takhee Lee Seoul National University
Chongwu Zhou
Chongwu Zhou University of Southern California
Antonio Facchetti
Antonio Facchetti Northwestern University

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Additionally, a master's in training and development online can prepare engineers for roles in corporate training, helping develop technical staff and improving organizational performance through effective instructional design.

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