The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Philip X.-L. Feng sits on this spectrum.
This scientist: 253 publications — 45th percentile
45% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Philip X.-L. Feng sits on this spectrum.
This scientist: 36 D-Index — 24th percentile
24% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Philip X.-L. Feng is affiliated with the University of Florida in the United States. Their research spans multiple areas at the intersection of engineering, physics, and materials science. They have a strong focus on electrical and electronic engineering as well as atomic and molecular physics and optics, alongside contributions in materials chemistry and biomedical engineering.
Their recent papers reflect a diverse range of topics primarily centered on resonator technologies, 2D materials, and semiconductor devices. Notable publications include:
Frequent co-authors who have contributed to their scholarly output include:
The scientist's work is frequently published in venues such as:
Main research topics addressed in their work include:
Their extensive focus on resonator technologies involves both mechanical and optical systems, contributing knowledge to the development and tuning of nanomechanical and electromechanical resonators, including those based on atomic layer and van der Waals heterostructures.
In the realm of 2D materials, the researcher investigates magnetic heterostructures and transistor polarity control, impacting areas such as spintronics and complementary logic device engineering.
The combination of research in both fundamental physics and applied engineering techniques characterizes their academic profile, emphasizing contributions to the design and implementation of micro- and nanoscale devices and systems.
Y. T. Yang;C. Callegari;X. L. Feng;K. L. Ekinci
X. L. Feng;Rongrui He;Peidong Yang;M. L. Roukes
Abram L. Falk;Bob B. Buckley;Greg Calusine;William F. Koehl
X. L. Feng;C. J. White;A. Hajimiri;M. L. Roukes
Jaesung Lee;Zenghui Wang;Keliang He;Jie Shan
Rongrui He;X. L. Feng;M. L. Roukes;Peidong Yang
R. B. Karabalin;M. H. Matheny;X. L. Feng;E. Defaÿ
X. L. Feng;M. H. Matheny;C. A. Zorman;M. Mehregany
Unknown
X. M. H. Huang;X. L. Feng;C. A. Zorman;M. Mehregany
Jaesung Lee;Zenghui Wang;Zenghui Wang;Keliang He;Rui Yang
Rui Yang;Xuqian Zheng;Zenghui Wang;Christopher J. Miller
Zenghui Wang;Hao Jia;Xuqian Zheng;Rui Yang
Rui Yang;Jaesung Lee;Souvik Ghosh;Hao Tang
R. B. Karabalin;X. L. Feng;M. L. Roukes
Zenghui Wang;Hao Jia;Xu-Qian Zheng;Rui Yang
Zenghui Wang;Jaesung Lee;Philip X. L. Feng
Rui Yang;Zenghui Wang;Philip X.-L. Feng
Xu-Qian Zheng;Jaesung Lee;Philip X.-L. Feng
Jaesung Lee;Zenghui Wang;Keliang He;Jie Shan
Fan Ye;Jaesung Lee;Philip X.-L. Feng
Xiyuan Lu;Jonathan Y. Lee;Philip X.-L. Feng;Qiang Lin
Xiyuan Lu;Jonathan Y. Lee;Philip X.-L. Feng;Qiang Lin
Arnob Islam;Jaesung Lee;Philip X.-L. Feng
Hao Jia;Rui Yang;Ariana E. Nguyen;Sahar Naghibi Alvillar
Yanan Wang;Yanan Wang;Jaesung Lee;Jaesung Lee;Xu-Qian Zheng;Xu-Qian Zheng;Yong Xie;Yong Xie
Zenghui Wang;Jaesung Lee;Keliang He;Jie Shan
Jaesung Lee;Zenghui Wang;Keliang He;Jie Shan
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