World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
42
Citations
5853
World Ranking
12617
National Ranking
2892

Jinwoo Hwang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jinwoo Hwang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 236 publications — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jinwoo Hwang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jinwoo Hwang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 42 D-Index — 3rd percentile

3% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2014 - Albert Crewe Award, Mineralogical Society of America

Overview

Jinwoo Hwang is affiliated with The Ohio State University in the United States and has a significant body of research primarily in the fields of Materials Science and Engineering. Their work spans various subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, and Atomic and Molecular Physics, and Optics.

The scientist has contributed extensively in key research topics such as:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • Advanced Photocatalysis Techniques
  • GaN-based semiconductor devices and materials
  • Metallic Glasses and Amorphous Alloys

Frequent collaboration has been a feature of their career, with notable co-authors including Hsien-Lien Huang, Menglin Zhu, Hongping Zhao, A F M Anhar Uddin Bhuiyan, and Chris Chae. These partnerships have contributed to a diverse range of publications and research outcomes.

Their publishing record shows a focus on specific venues such as:

  • Microscopy and Microanalysis
  • arXiv (Cornell University)
  • APL Materials
  • Applied Physics Letters
  • Journal of Applied Physics

Representative recent papers include:

  • "Deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2", 2022, Nature Materials
  • "Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films", 2020, Physical Review Letters
  • "Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films", 2020, APL Materials
  • "MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1-x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates", 2020, Crystal Growth & Design
  • "Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics", 2021, ACS Applied Materials & Interfaces

In addition to research articles, Jinwoo Hwang has received recognition such as the Albert Crewe Award from the Mineralogical Society of America in 2014.

Best Publications

  • Remote epitaxy through graphene enables two-dimensional material-based layer transfer

    Yunjo Kim;Samuel S. Cruz;Kyusang Lee;Babatunde O. Alawode

  • Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

    Yuewei Zhang;Adam Neal;Zhanbo Xia;Chandan Joishi;Chandan Joishi

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • Tailoring Binding Abilities by Incorporating Oxophilic Transition Metals on 3D Nanostructured Ni Arrays for Accelerated Alkaline Hydrogen Evolution Reaction.

    Jaerim Kim;Hyeonjung Jung;Sang-Mun Jung;Jinwoo Hwang

  • Nanoscale structure and structural relaxation in Zr50Cu45Al5 bulk metallic glass.

    Jinwoo Hwang;Z. H. Melgarejo;Y. E. Kalay;I. Kalay

  • Deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe 2

    I hsuan Kao;Ryan Muzzio;Hantao Zhang;Menglin Zhu

  • Electrical Switching of Tristate Antiferromagnetic Néel Order in α -Fe 2 O 3 Epitaxial Films

    Yang Cheng;Sisheng Yu;Menglin Zhu;Jinwoo Hwang

  • LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

    Subrina Rafique;Subrina Rafique;Rezaul Karim;Jared M. Johnson;Jinwoo Hwang

  • MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping

    A F M Anhar Uddin Bhuiyan;Zixuan Feng;Jared M. Johnson;Zhaoying Chen

  • Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

    A F M Anhar Uddin Bhuiyan;Zixuan Feng;Jared M. Johnson;Hsien-Lien Huang

  • Three-dimensional imaging of individual dopant atoms in SrTiO3.

    Jinwoo Hwang;Jack Y. Zhang;Adrian J. D’Alfonso;Leslie J. Allen

  • MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates

    A F M Anhar Uddin Bhuiyan;Zixuan Feng;Jared M. Johnson;Hsien-Lien Huang

  • Interband tunneling for hole injection in III-nitride ultraviolet emitters

    Yuewei Zhang;Sriram Krishnamoorthy;Jared M. Johnson;Fatih Akyol

  • Toward an artificial Mott insulator: Correlations in confined high-density electron liquids in SrTiO3

    Pouya Moetakef;Clayton A. Jackson;Jinwoo Hwang;Leon Balents

  • Structural, optical, and magnetic characterization of monodisperse Fe-doped ZnO nanocrystals

    A. Parra-Palomino;O. Perales-Perez;R. Singhal;M. Tomar

  • Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

    Yuewei Zhang;Sriram Krishnamoorthy;Jared M. Johnson;Fatih Akyol

  • Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

    Jared M. Johnson;Zhen Chen;Joel B. Varley;Christine M. Jackson

  • Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics.

    Yiwen Song;Daniel Shoemaker;Jacob H. Leach;Craig McGray

  • Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates

    Choong Hee Lee;Sriram Krishnamoorthy;Dante J. O'Hara;Mark R. Brenner

  • Structural origins of the properties of rare earth nickelate superlattices

    Jinwoo Hwang;Junwoo Son;Jack Y. Zhang;Anderson Janotti

  • Variable resolution fluctuation electron microscopy on Cu-Zr metallic glass using a wide range of coherent STEM probe size.

    Jinwoo Hwang;P.M. Voyles

  • Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction

    Unknown

  • Compositional modulation and optical emission in AlGaN epitaxial films

    Min Gao;S. T. Bradley;Yu Cao;D. Jena

  • β-(Al 0.18 Ga 0.82 ) 2 O 3 /Ga 2 O 3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

    Nidhin Kurian Kalarickal;Zhanbo Xia;Hsien-Lien Huang;Wyatt Moore

Frequent Co-Authors

Siddharth Rajan
Siddharth Rajan The Ohio State University
Hongping Zhao
Hongping Zhao The Ohio State University
Susanne Stemmer
Susanne Stemmer University of California, Santa Barbara
Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Paul M. Voyles
Paul M. Voyles University of Wisconsin–Madison
David A. Muller
David A. Muller Cornell University
Matthew J. Kramer
Matthew J. Kramer Ames Laboratory
Roland Kawakami
Roland Kawakami The Ohio State University
Yunzhi Wang
Yunzhi Wang The Ohio State University
Fengyuan Yang
Fengyuan Yang The Ohio State University

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