World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
79
Citations
28558
World Ranking
549
National Ranking
249

Materials Science

D-Index
77
Citations
26970
World Ranking
3076
National Ranking
860

Research.com Recognitions

  • 2016 - Fellow, National Academy of Inventors
  • 2014 - IEEE Medal of Honor For the invention, implementation, and commercialization of power semiconductor devices with widespread benefits to society.”
  • 1993 - Member of the National Academy of Engineering For contributions to power semiconductor devices leading to the advent of smart power technology.
  • 1983 - IEEE Fellow For contributions to the development of power semiconductor devices.

Overview

Bantval J. Baliga is affiliated with North Carolina State University in the United States. Their research primarily focuses on engineering, with a specialization in electrical and electronic engineering. Their work notably involves silicon carbide semiconductor technologies, multilevel inverters and converters, electromagnetic compatibility and noise suppression, and advanced DC-DC converters.

The scientist has published extensively on several topics within these fields. Frequent publication venues include:

  • IEEE Transactions on Power Electronics
  • IEEE Open Journal of the Industrial Electronics Society
  • IEEE Electron Devices Magazine

Among the recent publications by the scientist and their collaborators are:

  • "Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter" (2023), published in IEEE Transactions on Power Electronics
  • "Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs" (2024), published in IEEE Open Journal of the Industrial Electronics Society
  • "Five Decades of Revolutionary Power Semiconductor Device Innovations: My Story [Keynote]" (2024), published in IEEE Electron Devices Magazine

Co-authors who have frequently collaborated with this researcher include Sanket Parashar, Nithin Kolli, Raj Kumar Kokkonda, Ajit Kanale, and Subhashish Bhattacharya.

Bantval J. Baliga has received several awards recognizing contributions to power semiconductor devices and related technologies. These honors include:

  • IEEE Medal of Honor (2014) for the invention, implementation, and commercialization of power semiconductor devices with widespread benefits to society
  • Member of the National Academy of Engineering (1993) for contributions leading to the advent of smart power technology
  • Fellow of the IEEE (1983) for contributions to the development of power semiconductor devices
  • Fellow of the National Academy of Inventors (2016)

The research activities and published work demonstrate a focus on improving power semiconductor technologies and power electronics, contributing to advancements in the control, efficiency, and reliability of electrical power systems.

Best Publications

  • Fundamentals of Power Semiconductor Devices

    B. Jayant Baliga

  • Comparison of 6H-SiC, 3C-SiC, and Si for power devices

    M. Bhatnagar;B.J. Baliga

  • Power semiconductor device figure of merit for high-frequency applications

    B.J. Baliga

  • Modern power devices

    B. Jayant Baliga

  • Optimum semiconductors for high-power electronics

    K. Shenai;R.S. Scott;B.J. Baliga

  • Gallium nitride devices for power electronic applications

    B Jayant Baliga

  • Trends in power semiconductor devices

    B.J. Baliga

  • Semiconductors for high‐voltage, vertical channel field‐effect transistors

    B. J. Baliga

  • Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance

    Bantval J. Baliga

  • Silicon Carbide Power Devices

    B. Jayant Baliga

  • The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

    B.J. Baliga;M.S. Adler;R.P. Love;P.V. Gray

  • The insulated gate rectifier (IGR): A new power switching device

    B.J. Baliga;M.S. Adler;P.V. Gray;R.P. Love

  • Smart grid technologies

    Jun Wang;A. Huang;Woongje Sung;Yu Liu

  • Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method

    Hsueh-Rong Chang;Bantval J. Baliga;Tat-Sing P. Chow

  • An overview of smart power technology

    B.J. Baliga

  • Silicon-carbide high-voltage (400 V) Schottky barrier diodes

    M. Bhatnagar;P.K. McLarty;B.J. Baliga

  • Multicellular FET having a Schottky diode merged therewith

    Charles S. Korman;Bantval J. Baliga;Hsueh-Rong Chang

  • Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers

    B.J. Baliga;E. Sun

  • The future of power semiconductor device technology

    B.J. Baliga

  • Planar Nearly Ideal Edge-Termination Technique for GaN Devices

    A M Ozbek;B J Baliga

  • Power rectifier with trenches

    Hsueh-Rong Chang;Bantval J. Baliga;David W. Tong

Frequent Co-Authors

T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
Paul M. Campbell
Paul M. Campbell United States Naval Research Laboratory
Nathan S. Lewis
Nathan S. Lewis California Institute of Technology
Robert L. Steigerwald
Robert L. Steigerwald General Electric (United States)
Khai D. T. Ngo
Khai D. T. Ngo Virginia Tech
James R. Shealy
James R. Shealy Cornell University
Michael G. Spencer
Michael G. Spencer Cornell University
Veena Misra
Veena Misra North Carolina State University

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