World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
79
Citations
28558
World Ranking
549
National Ranking
250

Materials Science

D-Index
77
Citations
26970
World Ranking
3074
National Ranking
858

Bantval J. Baliga publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Bantval J. Baliga sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 655 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Bantval J. Baliga D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Bantval J. Baliga sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 79 D-Index — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2016 - Fellow, National Academy of Inventors
  • 2014 - IEEE Medal of Honor For the invention, implementation, and commercialization of power semiconductor devices with widespread benefits to society.”
  • 1993 - Member of the National Academy of Engineering For contributions to power semiconductor devices leading to the advent of smart power technology.
  • 1983 - IEEE Fellow For contributions to the development of power semiconductor devices.

Overview

Bantval J. Baliga is affiliated with North Carolina State University in the United States. Their research primarily focuses on engineering, with a specialization in electrical and electronic engineering. Their work notably involves silicon carbide semiconductor technologies, multilevel inverters and converters, electromagnetic compatibility and noise suppression, and advanced DC-DC converters.

The scientist has published extensively on several topics within these fields. Frequent publication venues include:

  • IEEE Transactions on Power Electronics
  • IEEE Open Journal of the Industrial Electronics Society
  • IEEE Electron Devices Magazine

Among the recent publications by the scientist and their collaborators are:

  • "Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter" (2023), published in IEEE Transactions on Power Electronics
  • "Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs" (2024), published in IEEE Open Journal of the Industrial Electronics Society
  • "Five Decades of Revolutionary Power Semiconductor Device Innovations: My Story [Keynote]" (2024), published in IEEE Electron Devices Magazine

Co-authors who have frequently collaborated with this researcher include Sanket Parashar, Nithin Kolli, Raj Kumar Kokkonda, Ajit Kanale, and Subhashish Bhattacharya.

Bantval J. Baliga has received several awards recognizing contributions to power semiconductor devices and related technologies. These honors include:

  • IEEE Medal of Honor (2014) for the invention, implementation, and commercialization of power semiconductor devices with widespread benefits to society
  • Member of the National Academy of Engineering (1993) for contributions leading to the advent of smart power technology
  • Fellow of the IEEE (1983) for contributions to the development of power semiconductor devices
  • Fellow of the National Academy of Inventors (2016)

The research activities and published work demonstrate a focus on improving power semiconductor technologies and power electronics, contributing to advancements in the control, efficiency, and reliability of electrical power systems.

Best Publications

  • Fundamentals of Power Semiconductor Devices

    B. Jayant Baliga

  • Comparison of 6H-SiC, 3C-SiC, and Si for power devices

    M. Bhatnagar;B.J. Baliga

  • Power semiconductor device figure of merit for high-frequency applications

    B.J. Baliga

  • Modern power devices

    B. Jayant Baliga

  • Optimum semiconductors for high-power electronics

    K. Shenai;R.S. Scott;B.J. Baliga

  • Gallium nitride devices for power electronic applications

    B Jayant Baliga

  • Trends in power semiconductor devices

    B.J. Baliga

  • Semiconductors for high‐voltage, vertical channel field‐effect transistors

    B. J. Baliga

  • Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance

    Bantval J. Baliga

  • Silicon Carbide Power Devices

    B. Jayant Baliga

  • The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

    B.J. Baliga;M.S. Adler;R.P. Love;P.V. Gray

  • The insulated gate rectifier (IGR): A new power switching device

    B.J. Baliga;M.S. Adler;P.V. Gray;R.P. Love

  • Smart grid technologies

    Jun Wang;A. Huang;Woongje Sung;Yu Liu

  • Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method

    Hsueh-Rong Chang;Bantval J. Baliga;Tat-Sing P. Chow

  • An overview of smart power technology

    B.J. Baliga

  • Silicon-carbide high-voltage (400 V) Schottky barrier diodes

    M. Bhatnagar;P.K. McLarty;B.J. Baliga

  • Multicellular FET having a Schottky diode merged therewith

    Charles S. Korman;Bantval J. Baliga;Hsueh-Rong Chang

  • Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers

    B.J. Baliga;E. Sun

  • The future of power semiconductor device technology

    B.J. Baliga

  • Planar Nearly Ideal Edge-Termination Technique for GaN Devices

    A M Ozbek;B J Baliga

  • Power rectifier with trenches

    Hsueh-Rong Chang;Bantval J. Baliga;David W. Tong

Frequent Co-Authors

T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
Paul M. Campbell
Paul M. Campbell United States Naval Research Laboratory
Nathan S. Lewis
Nathan S. Lewis California Institute of Technology
Robert L. Steigerwald
Robert L. Steigerwald General Electric (United States)
Khai D. T. Ngo
Khai D. T. Ngo Virginia Tech
James R. Shealy
James R. Shealy Cornell University
Michael G. Spencer
Michael G. Spencer Cornell University
Veena Misra
Veena Misra North Carolina State University

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