World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
43
Citations
12549
World Ranking
3808
National Ranking
1374

Materials Science

D-Index
44
Citations
12798
World Ranking
11900
National Ranking
2755

James R. Shealy publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where James R. Shealy sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 171 publications — 20th percentile

20% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

James R. Shealy D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where James R. Shealy sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 43 D-Index — 45th percentile

45% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

James R. Shealy is affiliated with Cornell University in the United States. Their academic profile reflects involvement in research and scholarship within a university setting, although specific details on their research outputs and focus areas are limited in the current data.

Information regarding recent papers, frequent co-authors, publication venues, book publications, and fields of study for James R. Shealy is not available. Consequently, an overview of their research topics or collaborations cannot be detailed at this time.

Similarly, no data is provided concerning awards or recognitions, which restricts further insight into accolades or distinctions granted to the scientist.

The absence of documented recent publications or fields of study suggests that available data on James R. Shealy primarily consist of their institutional affiliation, rather than a detailed record of academic contributions or thematic focus.

Given these limitations, this profile reflects the currently accessible information relevant to James R. Shealy's professional academic presence without speculative additions.

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

    B.M. Green;K.K. Chu;E.M. Chumbes;J.A. Smart

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

    Hyungtak Kim;R.M. Thompson;V. Tilak;T.R. Prunty

  • Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

    R. Dimitrov;M. Murphy;J. Smart;W. Schaff

  • Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

    V. Tilak;B. Green;V. Kaper;H. Kim

  • Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

    O. Ambacher;R. Dimitrov;M. Stutzmann;B.E. Foutz

  • AlGaN/GaN high electron mobility transistors on Si(111) substrates

    E.M. Chumbes;A.T. Schremer;J.A. Smart;Y. Wang

  • Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis

    A. Matulionis;J. Liberis;I. Matulionienė;M. Ramonas

  • Electron drift velocity in AlGaN/GaN channel at high electric fields

    L. Ardaravičius;A. Matulionis;J. Liberis;O. Kiprijanovic

  • Highly oriented zinc oxide films grown by the oxidation of diethylzinc

    Sorab K. Ghandhi;Robert J. Field;James R. Shealy

  • An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

    J R Shealy;V Kaper;V Tilak;T Prunty

  • AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

    J. A. Smart;A. T. Schremer;N. G. Weimann;O. Ambacher

  • High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

    B.M. Green;V. Tilak;S. Lee;H. Kim

  • High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates

    B.M. Green;V. Tilak;Sungjae Lee;Hyungtak Kim

  • Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

    E.M. Chumbes;J.A. Smart;T. Prunty;J.R. Shealy

  • High electron mobility AlGaN/GaN heterostructure on (111) Si

    A. T. Schremer;J. A. Smart;Y. Wang;O. Ambacher

  • Growth and passivation of AlGaN/GaN heterostructures

    J.R. Shealy;T.R. Prunty;E.M. Chumbes;B.K. Ridley

  • Field effect semiconductor device having dipole barrier

    Lester Fuess Eastman;James Richard Shealy

Frequent Co-Authors

Lester F. Eastman
Lester F. Eastman Cornell University
William J. Schaff
William J. Schaff Cornell University
Oliver Ambacher
Oliver Ambacher University of Freiburg
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Noel C. MacDonald
Noel C. MacDonald University of California, Santa Barbara
Michael G. Spencer
Michael G. Spencer Cornell University
Jose A. Garrido
Jose A. Garrido Institut Català de Nanociència i Nanotecnologia
Hideo Ohno
Hideo Ohno Tohoku University
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Bantval J. Baliga
Bantval J. Baliga North Carolina State University

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