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Electronics and Electrical Engineering

D-Index
43
Citations
12549
World Ranking
3808
National Ranking
1373

Materials Science

D-Index
44
Citations
12798
World Ranking
11902
National Ranking
2758

Overview

James R. Shealy is affiliated with Cornell University in the United States. Their academic profile reflects involvement in research and scholarship within a university setting, although specific details on their research outputs and focus areas are limited in the current data.

Information regarding recent papers, frequent co-authors, publication venues, book publications, and fields of study for James R. Shealy is not available. Consequently, an overview of their research topics or collaborations cannot be detailed at this time.

Similarly, no data is provided concerning awards or recognitions, which restricts further insight into accolades or distinctions granted to the scientist.

The absence of documented recent publications or fields of study suggests that available data on James R. Shealy primarily consist of their institutional affiliation, rather than a detailed record of academic contributions or thematic focus.

Given these limitations, this profile reflects the currently accessible information relevant to James R. Shealy's professional academic presence without speculative additions.

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

    B.M. Green;K.K. Chu;E.M. Chumbes;J.A. Smart

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

    Hyungtak Kim;R.M. Thompson;V. Tilak;T.R. Prunty

  • Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

    R. Dimitrov;M. Murphy;J. Smart;W. Schaff

  • Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

    V. Tilak;B. Green;V. Kaper;H. Kim

  • Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

    O. Ambacher;R. Dimitrov;M. Stutzmann;B.E. Foutz

  • AlGaN/GaN high electron mobility transistors on Si(111) substrates

    E.M. Chumbes;A.T. Schremer;J.A. Smart;Y. Wang

  • Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis

    A. Matulionis;J. Liberis;I. Matulionienė;M. Ramonas

  • Electron drift velocity in AlGaN/GaN channel at high electric fields

    L. Ardaravičius;A. Matulionis;J. Liberis;O. Kiprijanovic

  • Highly oriented zinc oxide films grown by the oxidation of diethylzinc

    Sorab K. Ghandhi;Robert J. Field;James R. Shealy

  • An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

    J R Shealy;V Kaper;V Tilak;T Prunty

  • AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

    J. A. Smart;A. T. Schremer;N. G. Weimann;O. Ambacher

  • High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

    B.M. Green;V. Tilak;S. Lee;H. Kim

  • High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates

    B.M. Green;V. Tilak;Sungjae Lee;Hyungtak Kim

  • Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

    E.M. Chumbes;J.A. Smart;T. Prunty;J.R. Shealy

  • High electron mobility AlGaN/GaN heterostructure on (111) Si

    A. T. Schremer;J. A. Smart;Y. Wang;O. Ambacher

  • Growth and passivation of AlGaN/GaN heterostructures

    J.R. Shealy;T.R. Prunty;E.M. Chumbes;B.K. Ridley

  • Field effect semiconductor device having dipole barrier

    Lester Fuess Eastman;James Richard Shealy

Frequent Co-Authors

Lester F. Eastman
Lester F. Eastman Cornell University
William J. Schaff
William J. Schaff Cornell University
Oliver Ambacher
Oliver Ambacher University of Freiburg
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Noel C. MacDonald
Noel C. MacDonald University of California, Santa Barbara
Michael G. Spencer
Michael G. Spencer Cornell University
Jose A. Garrido
Jose A. Garrido Institut Català de Nanociència i Nanotecnologia
Hideo Ohno
Hideo Ohno Tohoku University
Jerry M. Woodall
Jerry M. Woodall University of California, Davis
Bantval J. Baliga
Bantval J. Baliga North Carolina State University

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