World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
12216
World Ranking
1244
National Ranking
509

Materials Science

D-Index
65
Citations
12309
World Ranking
5737
National Ranking
1477

Grigory Simin publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Grigory Simin sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 276 publications — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Grigory Simin D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Grigory Simin sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 65 D-Index — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Grigory Simin is affiliated with the University of South Carolina in the United States. Their research spans multiple disciplines, predominantly focusing on physics, engineering, and materials science.

The main fields of study covered by Simin include:

  • Physics and Astronomy
  • Engineering
  • Materials Science

Within these broader fields, Simin's work delves into various subfields such as:

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering

The core topics of Simin's research focus on semiconductor technologies and materials, specifically:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Silicon Carbide Semiconductor Technologies
  • Metal and Thin Film Mechanics
  • Acoustic Wave Resonator Technologies

Simin has published extensively in various scientific venues, with frequent contributions to:

  • Applied Physics Express
  • Applied Physics Letters
  • physica status solidi (a)
  • ECS Meeting Abstracts
  • Micromachines

Collaborations are a significant aspect of Simin's research, with frequent coauthors including:

  • Asif Khan
  • Kamal Hussain
  • Abdullah Mamun
  • M. V. S. Chandrashekhar
  • Mikhail Gaevski

Recent papers authored by Simin cover advancements in AlGaN and AlN semiconductor devices and heterostructures:

  • "Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes," 2021, Applied Physics Express
  • "High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates," 2023, Applied Physics Express
  • "Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate," 2023, Applied Physics Express
  • "An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays," 2020, Applied Physics Express
  • "Ultrawide bandgap AlxGa1-xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1," 2020, Applied Physics Express

Best Publications

  • An assessment of wide bandgap semiconductors for power devices

    J.L. Hudgins;G.S. Simin;E. Santi;M.A. Khan

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

    W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  • AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

    M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin

  • Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

    X. Hu;A. Koudymov;Grigory Simin;J. Yang

  • Carrier mobility model for GaN

    Tigran T Mnatsakanov;Michael E Levinshtein;Lubov I Pomortseva;Sergey N Yurkov

  • AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

    V. Kumar;W. Lu;R. Schwindt;A. Kuliev

  • Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

    J. P. Zhang;H. M. Wang;M. E. Gaevski;C. Q. Chen

  • Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

    J. P. Zhang;A. Chitnis;V. Adivarahan;S. Wu

  • Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

    X. Hu;G. Simin;J. Yang;M. Asif Khan

  • The 1.6-kV AlGaN/GaN HFETs

    N. Tipirneni;A. Koudymov;V. Adivarahan;J. Yang

  • Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

    E. Kuokstis;J. W. Yang;Grigory Simin;M. Asif Khan

  • Lattice and energy band engineering in AlInGaN/GaN heterostructures

    M. Asif Khan;J. W. Yang;Grigory Simin;R. Gaska

  • High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

    E. Frayssinet;W. Knap;P. Lorenzini;N. Grandjean

  • Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

    J. W. Yang;A. Lunev;Grigory Simin;A. Chitnis

  • Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

    Grigory Simin;A. Koudymov;A. Tarakji;X. Hu

  • Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

    E. Kuokstis;C. Q. Chen;M. E. Gaevski;W. H. Sun

  • AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

    Grigory Simin;Xuhong Hu;Ahmad Tarakji;Jianping Zhang

  • Field-plate engineering for HFETs

    S. Karmalkar;M.S. Shur;G. Simin;M.A. Khan

  • New Developments in Gallium Nitride and the Impact on Power Electronics

    M.A. Khan;G. Simin;S.G. Pytel;A. Monti

  • SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors

    V. Adivarahan;G. Simin;J. W. Yang;A. Lunev

Frequent Co-Authors

Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Remis Gaska
Remis Gaska UVTON, Inc.
M. Asif Khan
M. Asif Khan University of South Carolina
Vinod Adivarahan
Vinod Adivarahan Nitek (United States)
M.A. Khan
M.A. Khan University of South Carolina
Sergey Rumyantsev
Sergey Rumyantsev University of California, Riverside
Nezih Pala
Nezih Pala Florida International University
Xiaobo Sharon Hu
Xiaobo Sharon Hu University of Notre Dame
Enrico Santi
Enrico Santi University of South Carolina
Antonello Monti
Antonello Monti RWTH Aachen University

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