Grigory Simin mainly investigates Optoelectronics, Wide-bandgap semiconductor, Heterojunction, Transistor and Field-effect transistor. He works in the field of Optoelectronics, focusing on Light-emitting diode in particular. His studies in Wide-bandgap semiconductor integrate themes in fields like Metalorganic vapour phase epitaxy, Diode, Quantum well, Sapphire and Photoluminescence.
The Heterojunction study combines topics in areas such as Algan gan, Electron mobility and Band gap. Transistor is a subfield of Voltage that Grigory Simin tackles. His study looks at the relationship between Field-effect transistor and fields such as MOSFET, as well as how they intersect with chemical problems.
His main research concerns Optoelectronics, Transistor, Wide-bandgap semiconductor, Heterojunction and Field-effect transistor. His work on Light-emitting diode as part of general Optoelectronics study is frequently connected to Microwave, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. He combines subjects such as Radio frequency, RF power amplifier and Leakage with his study of Transistor.
His work in Wide-bandgap semiconductor tackles topics such as Quantum well which are related to areas like Photoluminescence and Exciton. Grigory Simin has included themes like Fermi gas, Semiconductor, Threshold voltage, Band gap and Nitride in his Heterojunction study. His Field-effect transistor research includes elements of Barrier layer, Double heterostructure, Noise and MOSFET.
Grigory Simin focuses on Optoelectronics, Transistor, Heterojunction, Wide-bandgap semiconductor and Schottky diode. Grigory Simin applies his multidisciplinary studies on Optoelectronics and Microwave in his research. The various areas that Grigory Simin examines in his Transistor study include Capacitance, Radio frequency and Current.
His Heterojunction research is multidisciplinary, relying on both Field-effect transistor, Passivation and Ultraviolet. His Wide-bandgap semiconductor research integrates issues from RC time constant and Power semiconductor device. His Schottky diode study integrates concerns from other disciplines, such as Bipolar junction transistor, Varicap, Schottky barrier and Lead sulfide.
Grigory Simin spends much of his time researching Optoelectronics, Transistor, Wide-bandgap semiconductor, Integrated circuit and Field-effect transistor. Grigory Simin usually deals with Optoelectronics and limits it to topics linked to Monolithic microwave integrated circuit and RF power amplifier. His study explores the link between Transistor and topics such as Sheet resistance that cross with problems in Barrier layer and Sapphire.
His research in Wide-bandgap semiconductor intersects with topics in Power switching, Time constant and RC time constant. His Integrated circuit research is multidisciplinary, incorporating elements of Electronic component and Passivation. Grigory Simin interconnects Plasma oscillation, Waves in plasmas and Terahertz radiation in the investigation of issues within Field-effect transistor.
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An assessment of wide bandgap semiconductors for power devices
J.L. Hudgins;G.S. Simin;E. Santi;M.A. Khan.
IEEE Transactions on Power Electronics (2003)
Nonresonant Detection of Terahertz Radiation in Field Effect Transistors
W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev.
Journal of Applied Physics (2002)
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin.
Applied Physics Letters (2000)
Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors
X. Hu;A. Koudymov;Grigory Simin;J. Yang.
Applied Physics Letters (2001)
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
V. Kumar;W. Lu;R. Schwindt;A. Kuliev.
IEEE Electron Device Letters (2002)
Carrier mobility model for GaN
Tigran T Mnatsakanov;Michael E Levinshtein;Lubov I Pomortseva;Sergey N Yurkov.
Solid-state Electronics (2003)
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
J. P. Zhang;A. Chitnis;V. Adivarahan;S. Wu.
Applied Physics Letters (2002)
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
J. P. Zhang;H. M. Wang;M. E. Gaevski;C. Q. Chen.
Applied Physics Letters (2002)
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
X. Hu;G. Simin;J. Yang;M. Asif Khan.
Electronics Letters (2000)
The 1.6-kV AlGaN/GaN HFETs
N. Tipirneni;A. Koudymov;V. Adivarahan;J. Yang.
IEEE Electron Device Letters (2006)
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