World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
12216
World Ranking
1244
National Ranking
508

Materials Science

D-Index
65
Citations
12309
World Ranking
5739
National Ranking
1479

Overview

Grigory Simin is affiliated with the University of South Carolina in the United States. Their research spans multiple disciplines, predominantly focusing on physics, engineering, and materials science.

The main fields of study covered by Simin include:

  • Physics and Astronomy
  • Engineering
  • Materials Science

Within these broader fields, Simin's work delves into various subfields such as:

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering

The core topics of Simin's research focus on semiconductor technologies and materials, specifically:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Silicon Carbide Semiconductor Technologies
  • Metal and Thin Film Mechanics
  • Acoustic Wave Resonator Technologies

Simin has published extensively in various scientific venues, with frequent contributions to:

  • Applied Physics Express
  • Applied Physics Letters
  • physica status solidi (a)
  • ECS Meeting Abstracts
  • Micromachines

Collaborations are a significant aspect of Simin's research, with frequent coauthors including:

  • Asif Khan
  • Kamal Hussain
  • Abdullah Mamun
  • M. V. S. Chandrashekhar
  • Mikhail Gaevski

Recent papers authored by Simin cover advancements in AlGaN and AlN semiconductor devices and heterostructures:

  • "Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes," 2021, Applied Physics Express
  • "High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates," 2023, Applied Physics Express
  • "Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate," 2023, Applied Physics Express
  • "An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays," 2020, Applied Physics Express
  • "Ultrawide bandgap AlxGa1-xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1," 2020, Applied Physics Express

Best Publications

  • An assessment of wide bandgap semiconductors for power devices

    J.L. Hudgins;G.S. Simin;E. Santi;M.A. Khan

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

    W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  • AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

    M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin

  • Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

    X. Hu;A. Koudymov;Grigory Simin;J. Yang

  • Carrier mobility model for GaN

    Tigran T Mnatsakanov;Michael E Levinshtein;Lubov I Pomortseva;Sergey N Yurkov

  • AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

    V. Kumar;W. Lu;R. Schwindt;A. Kuliev

  • Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

    J. P. Zhang;H. M. Wang;M. E. Gaevski;C. Q. Chen

  • Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

    J. P. Zhang;A. Chitnis;V. Adivarahan;S. Wu

  • Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

    X. Hu;G. Simin;J. Yang;M. Asif Khan

  • The 1.6-kV AlGaN/GaN HFETs

    N. Tipirneni;A. Koudymov;V. Adivarahan;J. Yang

  • Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

    E. Kuokstis;J. W. Yang;Grigory Simin;M. Asif Khan

  • Lattice and energy band engineering in AlInGaN/GaN heterostructures

    M. Asif Khan;J. W. Yang;Grigory Simin;R. Gaska

  • High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

    E. Frayssinet;W. Knap;P. Lorenzini;N. Grandjean

  • Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

    J. W. Yang;A. Lunev;Grigory Simin;A. Chitnis

  • Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

    Grigory Simin;A. Koudymov;A. Tarakji;X. Hu

  • Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

    E. Kuokstis;C. Q. Chen;M. E. Gaevski;W. H. Sun

  • AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

    Grigory Simin;Xuhong Hu;Ahmad Tarakji;Jianping Zhang

  • Field-plate engineering for HFETs

    S. Karmalkar;M.S. Shur;G. Simin;M.A. Khan

  • New Developments in Gallium Nitride and the Impact on Power Electronics

    M.A. Khan;G. Simin;S.G. Pytel;A. Monti

  • SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors

    V. Adivarahan;G. Simin;J. W. Yang;A. Lunev

Frequent Co-Authors

Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Remis Gaska
Remis Gaska UVTON, Inc.
M. Asif Khan
M. Asif Khan University of South Carolina
Vinod Adivarahan
Vinod Adivarahan Nitek (United States)
M.A. Khan
M.A. Khan University of South Carolina
Sergey Rumyantsev
Sergey Rumyantsev University of California, Riverside
Nezih Pala
Nezih Pala Florida International University
Xiaobo Sharon Hu
Xiaobo Sharon Hu University of Notre Dame
Enrico Santi
Enrico Santi University of South Carolina
Antonello Monti
Antonello Monti RWTH Aachen University

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