B. E. Weir

Best Publications

• Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

  E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  951
  Citations

• Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si

  E. A. Fitzgerald;Y.‐H. Xie;D. Monroe;P. J. Silverman

  716
  Citations

• Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

  Y. J. Mii;Y. H. Xie;E. A. Fitzgerald;Don Monroe

  364
  Citations

• Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors

  G. Hasnain;K. Tai;L. Yang;Y.H. Wang

  272
  Citations

• Ultra-thin gate dielectrics: they break down, but do they fail?

  B.E. Weir;P.J. Silverman;D. Monroe;K.S. Krisch

  256
  Citations

• Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

  J. P. Chang;J. P. Chang;M. L. Green;V. M. Donnelly;R. L. Opila

  162
  Citations

• Absorption and luminescence studies of free-standing porous silicon films.

  Y. H. Xie;M. S. Hybertsen;William L. Wilson;S. A. Ipri

  159
  Citations

• Explanation of stress-induced damage in thin oxides

  D.J. Bude;B.E. Weir;P.J. Silverman

  154
  Citations

• Precursor ion damage and angular dependence of single event gate rupture in thin oxides

  F.W. Sexton;D.M. Fleetwood;M.R. Shaneyfelt;P.E. Dodd

  140
  Citations

• Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

  G. Timp;A. Agarwal;F.H. Baumann;T. Boone

  125
  Citations

• A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

  M.A. Alam;B.E. Weir;P.J. Silverman

  124
  Citations

• 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 mu m diameter core silica fibre

  K. Tai;G. Hasnain;J. D. Wynn;R. J. Fischer

  122
  Citations

• A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

  M.A. Alam;B.E. Weir;P.J. Silverman

  101
  Citations

• Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

  M. L. Green;B. E. Weir;D. Brasen;Y. F. Hsieh

  95
  Citations

• Progress toward 10 nm CMOS devices

  G. Timp;K.K. Bourdelle;J.E. Bower;F.H. Baumann

  92
  Citations

• Thin dielectric films: Uncorrelated breakdown of integrated circuits.

  Muhammad A. Alam;R. Kent Smith;Bonnie E. Weir;Paul J. Silverman

  92
  Citations

• Monolithic integration of photodetector with vertical cavity surface emitting laser

  G. Hasnain;K. Tai;Y.H. Wang;J.D. Wynn

  89
  Citations

• Gate oxide reliability projection to the sub-2 nm regime

  B E Weir;M A Alam;J D Bude;P J Silverman

  89
  Citations

• Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si 1-x grown on patterned Si substrates

  E. A. Fitzgerald;Y.-H. Xie;D. Brasen;M. L. Green

  87
  Citations

• Understanding the limits of ultrathin SiO 2 and Si-O-N gate dielectrics for sub-50 nm CMOS

  M. L. Green;T. W. Sorsch;G. L. Timp;D. A. Muller

  85
  Citations