B. E. Weir

B. E. Weir publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where B. E. Weir sits on this spectrum.

B. E. Weir D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where B. E. Weir sits on this spectrum.

Best Publications

• Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

  E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  951
  Citations

• Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si

  E. A. Fitzgerald;Y.‐H. Xie;D. Monroe;P. J. Silverman

  716
  Citations

• Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

  Y. J. Mii;Y. H. Xie;E. A. Fitzgerald;Don Monroe

  364
  Citations

• Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors

  G. Hasnain;K. Tai;L. Yang;Y.H. Wang

  272
  Citations

• Ultra-thin gate dielectrics: they break down, but do they fail?

  B.E. Weir;P.J. Silverman;D. Monroe;K.S. Krisch

  256
  Citations

• Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy

  J. P. Chang;J. P. Chang;M. L. Green;V. M. Donnelly;R. L. Opila

  162
  Citations

• Absorption and luminescence studies of free-standing porous silicon films.

  Y. H. Xie;M. S. Hybertsen;William L. Wilson;S. A. Ipri

  159
  Citations

• Explanation of stress-induced damage in thin oxides

  D.J. Bude;B.E. Weir;P.J. Silverman

  154
  Citations

• Precursor ion damage and angular dependence of single event gate rupture in thin oxides

  F.W. Sexton;D.M. Fleetwood;M.R. Shaneyfelt;P.E. Dodd

  140
  Citations

• Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

  G. Timp;A. Agarwal;F.H. Baumann;T. Boone

  125
  Citations

• A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance

  M.A. Alam;B.E. Weir;P.J. Silverman

  124
  Citations

• 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 mu m diameter core silica fibre

  K. Tai;G. Hasnain;J. D. Wynn;R. J. Fischer

  122
  Citations

• A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

  M.A. Alam;B.E. Weir;P.J. Silverman

  101
  Citations

• Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

  M. L. Green;B. E. Weir;D. Brasen;Y. F. Hsieh

  95
  Citations

• Progress toward 10 nm CMOS devices

  G. Timp;K.K. Bourdelle;J.E. Bower;F.H. Baumann

  92
  Citations

• Thin dielectric films: Uncorrelated breakdown of integrated circuits.

  Muhammad A. Alam;R. Kent Smith;Bonnie E. Weir;Paul J. Silverman

  92
  Citations

• Monolithic integration of photodetector with vertical cavity surface emitting laser

  G. Hasnain;K. Tai;Y.H. Wang;J.D. Wynn

  89
  Citations

• Gate oxide reliability projection to the sub-2 nm regime

  B E Weir;M A Alam;J D Bude;P J Silverman

  89
  Citations

• Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si 1-x grown on patterned Si substrates

  E. A. Fitzgerald;Y.-H. Xie;D. Brasen;M. L. Green

  87
  Citations

• Understanding the limits of ultrathin SiO 2 and Si-O-N gate dielectrics for sub-50 nm CMOS

  M. L. Green;T. W. Sorsch;G. L. Timp;D. A. Muller

  85
  Citations