Erik H. Anderson focuses on Optics, Optoelectronics, Microscope, Zone plate and MOSFET. His Optics study is mostly concerned with Microscopy, Resolution, Diffraction, Holography and Laser. The concepts of his Optoelectronics study are interwoven with issues in Laser beam quality and Nanotechnology.
Erik H. Anderson works mostly in the field of Microscope, limiting it down to concerns involving Numerical aperture and, occasionally, Laser linewidth, Condenser, X-ray optics and Extreme ultraviolet. His study in Zone plate is interdisciplinary in nature, drawing from both Undulator, Scanning electron microscope and Lens. His MOSFET research includes elements of CMOS, Electrical engineering and Silicon-germanium.
His primary areas of study are Optics, Optoelectronics, Extreme ultraviolet lithography, Extreme ultraviolet and Microscope. His Optics study focuses mostly on Zone plate, Lithography, Microscopy, Image resolution and Interferometry. His research in Optoelectronics intersects with topics in Laser and Diffraction.
As a part of the same scientific family, Erik H. Anderson mostly works in the field of Extreme ultraviolet lithography, focusing on Diffraction efficiency and, on occasion, Blazed grating. In his work, Acoustic wave is strongly intertwined with Wavelength, which is a subfield of Extreme ultraviolet. His work in Microscope covers topics such as Optical transfer function which are related to areas like Spatial frequency.
His main research concerns Optics, Extreme ultraviolet, Optoelectronics, Laser and Extreme ultraviolet lithography. His study in Optics focuses on Holography, Image resolution, Wavelength, Microscope and Zone plate. His Holography research is multidisciplinary, relying on both Fourier transform and Microscopy.
The various areas that Erik H. Anderson examines in his Microscope study include Optical transfer function and Sample. Erik H. Anderson interconnects Nanoscopic scale, Laser ablation, Diffraction, Resolution and Mass spectrometry in the investigation of issues within Optoelectronics. The study incorporates disciplines such as Silicon nitride, Lithography, High harmonic generation, Diffraction efficiency and Focal length in addition to Extreme ultraviolet lithography.
Erik H. Anderson spends much of his time researching Optics, Extreme ultraviolet, Wavelength, Extreme ultraviolet lithography and Optoelectronics. His work on Optics deals in particular with Fresnel zone, Microscope, Shearing interferometer, Beam and Wavefront. His studies in Microscope integrate themes in fields like Image resolution, Reticle, Lithography and Photomask.
His work carried out in the field of Wavelength brings together such families of science as Acoustic wave, Surface wave, Mechanics, Inviscid flow and Rigidity. His Extreme ultraviolet lithography research integrates issues from Diffraction efficiency, Diffraction grating and Sputtering. The Optoelectronics study combines topics in areas such as Laser, Atomic physics and Mass spectrometry.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Nanomechanical oscillations in a single-C60 transistor
Hongkun Park;Hongkun Park;Jiwoong Park;Andrew K. L. Lim;Erik H. Anderson.
Nature (2000)
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
D. Hisamoto;Wen-Chin Lee;J. Kedzierski;H. Takeuchi.
IEEE Transactions on Electron Devices (2000)
Soft X-ray microscopy at a spatial resolution better than 15 nm
Weilun Chao;Weilun Chao;Bruce D. Harteneck;J. Alexander Liddle;Erik H. Anderson.
Nature (2005)
Scanned probe microscopy of electronic transport in carbon nanotubes.
A. Bachtold;A. Bachtold;M. S. Fuhrer;M. S. Fuhrer;S. Plyasunov;S. Plyasunov;M. Forero;M. Forero.
Physical Review Letters (2000)
Sub 50-nm FinFET: PMOS
Xuejue Huang;Wen-Chin Lee;Charles Kuo;D. Hisamoto.
international electron devices meeting (1999)
Interferometer‐controlled scanning transmission X‐ray microscopes at the Advanced Light Source
A.L.D. Kilcoyne;T. Tyliszczak;T. Tyliszczak;W.F. Steele;S. Fakra.
Journal of Synchrotron Radiation (2003)
Sub-50 nm P-channel FinFET
Xuejue Huang;Wen-Chin Lee;C. Kuo;D. Hisamoto.
IEEE Transactions on Electron Devices (2001)
Sub-20 nm CMOS FinFET technologies
Yang-Kyu Choi;N. Lindert;Peiqi Xuan;S. Tang.
international electron devices meeting (2001)
High Resolution 3D X-Ray Diffraction Microscopy
Jianwei Miao;Tetsuya Ishikawa;Bart Johnson;Erik H. Anderson.
Physical Review Letters (2002)
Nanoscale molecular-switch devices fabricated by imprint lithography
Yong Chen;Douglas A. A. Ohlberg;Xuema Li;Duncan R. Stewart.
Applied Physics Letters (2003)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
University of California, Berkeley
University of Colorado Boulder
University of Colorado Boulder
North Carolina State University
University of Colorado Boulder
University of California, Berkeley
University of California, Berkeley
MIT
MIT
Lawrence Berkeley National Laboratory
Memorial University of Newfoundland
University of Bayreuth
Skolkovo Institute of Science and Technology
University of Manchester
Beth Israel Deaconess Medical Center
Northwest A&F University
National Institutes of Health
Universitat Politècnica de València
University of Alberta
University of Otago
Spanish National Research Council
American Museum of Natural History
Florida State University
The University of Texas MD Anderson Cancer Center
University of Edinburgh
University of California, San Francisco