World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
6905
World Ranking
4862
National Ranking
138

Hans Reisinger publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hans Reisinger sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 187 publications — 25th percentile

25% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hans Reisinger D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hans Reisinger sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Hans Reisinger is affiliated with Infineon Technologies in Germany and focuses research efforts in the field of engineering, particularly within electrical and electronic engineering. Their work primarily addresses semiconductor materials and devices, with specialized emphasis on advancements in semiconductor devices and circuit design.

The scientist's research covers topics regarding silicon carbide semiconductor technologies and integrated circuits, alongside semiconductor failure analysis. These areas form a consistent theme throughout their scholarly contributions.

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Integrated Circuits and Semiconductor Failure Analysis

Hans Reisinger has published extensively in several venues, notably:

  • IEEE Transactions on Electron Devices (5 publications)
  • Materials Science Forum (2 publications)
  • 2022 IEEE International Reliability Physics Symposium (IRPS) (2 publications)
  • Microelectronics Reliability (1 publication)
  • Crystals (1 publication)

Recent significant papers include the following:

  • Gate Switching Instability in Silicon Carbide MOSFETs-Part I: Experimental, 2024, IEEE Transactions on Electron Devices
  • Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation, 2022, Microelectronics Reliability
  • Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies, 2021, IEEE Transactions on Electron Devices
  • Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full VG, VD Bias Space: Implications and Peculiarities, 2020, IEEE Transactions on Electron Devices
  • The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters, 2020, Crystals

Hans Reisinger has collaborated frequently with several co-authors throughout their research career, including:

  • Tibor Grasser
  • Maximilian W. Feil
  • Thomas Aichinger
  • Wolfgang Gustin
  • Michael Waltl

Best Publications

  • The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

    T. Grasser;H. Reisinger;P.-J. Wagner;F. Schanovsky

  • Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

    H. Reisinger;O. Blank;W. Heinrigs;A. Muhlhoff

  • The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

    Hans Reisinger;Tibor Grasser;Wolfgang Gustin;Christian Schlunder

  • Analytic modeling of the bias temperature instability using capture/emission time maps

    T. Grasser;P.-J. Wagner;H. Reisinger;Th. Aichinger

  • Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

    K. Puschkarsky;T. Grasser;T. Aichinger;W. Gustin

  • Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

    H. Bachhofer;H. Reisinger;E. Bertagnolli;H. von Philipsborn

  • Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

    Tibor Grasser;Hans Reisinger;Paul-Jürgen Wagner;Ben Kaczer

  • Growth and characterization of a delta‐function doping layer in Si

    H. P. Zeindl;T. Wegehaupt;I. Eisele;H. Oppolzer

  • Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability

    T. Grasser;B. Kaczer;P. Hehenberger;W. Gos

  • Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise

    T. Grasser;H. Reisinger;W. Goes;Th. Aichinger

  • Recent advances in understanding the bias temperature instability

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • A novel capacitor technology based on porous silicon

    V Lehmann;W Hönlein;H Reisinger;A Spitzer

  • Understanding and modeling AC BTI

    Hans Reisinger;Tibor Grasser;Karsten Ermisch;Heiko Nielen

  • Optical shortpass filters based on macroporous silicon

    Volker Lehmann;Reinhard Stengl;Hans Reisinger;Ralf Detemple

  • A unified perspective of RTN and BTI

    Tibor Grasser;Karsten Rott;H. Reisinger;M. Waltl

  • Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

    Katja Puschkarsky;Hans Reisinger;Thomas Aichinger;Wolfgang Gustin

  • A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models

    H. Reisinger;O. Blank;W. Heinrigs;W. Gustin

  • Method to operate a memory-cell device

    Hans Reisinger

  • Method of manufacturing a perforated workpiece

    Volker Lehmann;Hans Reisinger

Frequent Co-Authors

Alexander L. Shluger
Alexander L. Shluger University College London
Rainer Waser
Rainer Waser RWTH Aachen University
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Asen Asenov
Asen Asenov University of Glasgow

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