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Electronics and Electrical Engineering

D-Index
38
Citations
6905
World Ranking
4862
National Ranking
139

Overview

Hans Reisinger is affiliated with Infineon Technologies in Germany and focuses research efforts in the field of engineering, particularly within electrical and electronic engineering. Their work primarily addresses semiconductor materials and devices, with specialized emphasis on advancements in semiconductor devices and circuit design.

The scientist's research covers topics regarding silicon carbide semiconductor technologies and integrated circuits, alongside semiconductor failure analysis. These areas form a consistent theme throughout their scholarly contributions.

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Silicon Carbide Semiconductor Technologies
  • Integrated Circuits and Semiconductor Failure Analysis

Hans Reisinger has published extensively in several venues, notably:

  • IEEE Transactions on Electron Devices (5 publications)
  • Materials Science Forum (2 publications)
  • 2022 IEEE International Reliability Physics Symposium (IRPS) (2 publications)
  • Microelectronics Reliability (1 publication)
  • Crystals (1 publication)

Recent significant papers include the following:

  • Gate Switching Instability in Silicon Carbide MOSFETs-Part I: Experimental, 2024, IEEE Transactions on Electron Devices
  • Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation, 2022, Microelectronics Reliability
  • Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies, 2021, IEEE Transactions on Electron Devices
  • Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full VG, VD Bias Space: Implications and Peculiarities, 2020, IEEE Transactions on Electron Devices
  • The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters, 2020, Crystals

Hans Reisinger has collaborated frequently with several co-authors throughout their research career, including:

  • Tibor Grasser
  • Maximilian W. Feil
  • Thomas Aichinger
  • Wolfgang Gustin
  • Michael Waltl

Best Publications

  • The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer;T. Grasser;Ph. J. Roussel;J. Franco

  • The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

    T. Grasser;H. Reisinger;P.-J. Wagner;F. Schanovsky

  • Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements

    H. Reisinger;O. Blank;W. Heinrigs;A. Muhlhoff

  • The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

    Hans Reisinger;Tibor Grasser;Wolfgang Gustin;Christian Schlunder

  • Analytic modeling of the bias temperature instability using capture/emission time maps

    T. Grasser;P.-J. Wagner;H. Reisinger;Th. Aichinger

  • Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

    K. Puschkarsky;T. Grasser;T. Aichinger;W. Gustin

  • Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

    H. Bachhofer;H. Reisinger;E. Bertagnolli;H. von Philipsborn

  • Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

    Tibor Grasser;Hans Reisinger;Paul-Jürgen Wagner;Ben Kaczer

  • Growth and characterization of a delta‐function doping layer in Si

    H. P. Zeindl;T. Wegehaupt;I. Eisele;H. Oppolzer

  • Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability

    T. Grasser;B. Kaczer;P. Hehenberger;W. Gos

  • Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise

    T. Grasser;H. Reisinger;W. Goes;Th. Aichinger

  • Recent advances in understanding the bias temperature instability

    T. Grasser;B. Kaczer;W. Goes;H. Reisinger

  • A novel capacitor technology based on porous silicon

    V Lehmann;W Hönlein;H Reisinger;A Spitzer

  • Understanding and modeling AC BTI

    Hans Reisinger;Tibor Grasser;Karsten Ermisch;Heiko Nielen

  • Optical shortpass filters based on macroporous silicon

    Volker Lehmann;Reinhard Stengl;Hans Reisinger;Ralf Detemple

  • A unified perspective of RTN and BTI

    Tibor Grasser;Karsten Rott;H. Reisinger;M. Waltl

  • Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

    Katja Puschkarsky;Hans Reisinger;Thomas Aichinger;Wolfgang Gustin

  • A Comparison of Very Fast to Very Slow Components in Degradation and Recovery Due to NBTI and Bulk Hole Trapping to Existing Physical Models

    H. Reisinger;O. Blank;W. Heinrigs;W. Gustin

  • Method to operate a memory-cell device

    Hans Reisinger

  • Method of manufacturing a perforated workpiece

    Volker Lehmann;Hans Reisinger

Frequent Co-Authors

Alexander L. Shluger
Alexander L. Shluger University College London
Rainer Waser
Rainer Waser RWTH Aachen University
Uwe Schroeder
Uwe Schroeder Namlab gGmbH
Asen Asenov
Asen Asenov University of Glasgow

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