World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
67
Citations
19593
World Ranking
5031
National Ranking
1321

Yong P. Chen publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yong P. Chen sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 359 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yong P. Chen D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yong P. Chen sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 67 D-Index — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Yong P. Chen is affiliated with Purdue University West Lafayette in the United States and works primarily within the fields of Materials Science, Physics and Astronomy, and Engineering. Their research encompasses several specialized subfields, including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, and Electronic, Optical and Magnetic Materials.

The scientist's work centers broadly on advanced materials and their applications, with specific focus areas such as graphene research and applications, 2D materials and their uses, topological materials and phenomena, diamond and carbon-based materials research, quantum and electron transport phenomena, cold atom physics and Bose-Einstein condensates, as well as the physics of superconductivity and magnetism.

Yong P. Chen has published research in several well-established venues. Frequent publication platforms include:

  • arXiv (Cornell University)
  • Nano Letters
  • Physical Review B
  • SSRN Electronic Journal
  • Conference on Lasers and Electro-Optics

Collaborations are a significant part of their work, with frequent co-authors including Andres E. Llacsahuanga Allcca, Pramey Upadhyaya, Takashi Taniguchi, Kenji Watanabe, and Yaping Qi.

Recent published papers by or associated with Yong P. Chen cover diverse topics connected to 2D materials, quantum sensing, and photocurrent enhancement, among others. Notable examples include:

  • "Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties," 2022, Advanced Materials
  • "Recent Progresses in Machine Learning Assisted Raman Spectroscopy," 2023, Advanced Optical Materials
  • "High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing," 2021, Nano Letters
  • "Nuclear spin polarization and control in hexagonal boron nitride," 2022, Nature Materials
  • "Enhancing the graphene photocurrent using surface plasmons and a p-n junction," 2020, Light Science & Applications

The scientist's research contributions span fundamental and applied topics related to the electronic, optical, and magnetic properties of novel materials. The integration of machine learning techniques with materials characterization methods reflects their engagement with interdisciplinary approaches in materials science.

Best Publications

  • Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition

    Qingkai Yu;Qingkai Yu;Luis A. Jauregui;Wei Wu;Robert Colby

  • Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition

    Qingkai Yu;Luis A. Jauregui;Wei Wu;Robert Colby

  • Graphene segregated on Ni surfaces and transferred to insulators

    Qingkai Yu;Jie Lian;Sujitra Siriponglert;Hao Li

  • Thermal conductivity and thermal rectification in graphene nanoribbons: a molecular dynamics study.

    Jiuning Hu;Xiulin Ruan;Yong P. Chen

  • Polycrystalline graphene and other two-dimensional materials.

    Oleg V. Yazyev;Yong P. Chen

  • Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator

    Yang Xu;Ireneusz Miotkowski;Chang Liu;Jifa Tian

  • Electrically Tunable Damping of Plasmonic Resonances with Graphene

    Naresh K. Emani;Ting Fung Chung;Xingjie Ni;Alexander V. Kildishev

  • Rational synthesis of ultrathin n-type Bi2Te3 nanowires with enhanced thermoelectric properties.

    Genqiang Zhang;Benjamin Kirk;Luis A. Jauregui;Haoran Yang

  • Wafer-scale synthesis of graphene by chemical vapor deposition and its application in hydrogen sensing

    Wei Wu;Wei Wu;Zhihong Liu;Luis A. Jauregui;Qingkai Yu;Qingkai Yu

  • Effect of oxygen plasma etching on graphene studied using Raman spectroscopy and electronic transport measurements

    Isaac Childres;Luis A Jauregui;Jifa Tian;Yong P Chen

  • Ultrafast Surface Carrier Dynamics in the Topological Insulator Bi2Te3

    M. Hajlaoui;E. Papalazarou;J. Mauchain;G. Lantz

  • Atomic force microscope local oxidation nanolithography of graphene

    Lishan Weng;Liyuan Zhang;Yong P Chen;Leonid P Rokhinson

  • Phonon Lateral Confinement Enables Thermal Rectification in Asymmetric Single-Material Nanostructures

    Yan Wang;Ajit Vallabhaneni;Jiuning Hu;Bo Qiu

  • Electrical modulation of fano resonance in plasmonic nanostructures using graphene.

    Naresh K. Emani;Ting-Fung Chung;Alexander V. Kildishev;Vladimir M. Shalaev

  • Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

    Helin Cao;Qingkai Yu;Luis A Jauregui;J Tian

  • Nontoxic and Abundant Copper Zinc Tin Sulfide Nanocrystals for Potential High-Temperature Thermoelectric Energy Harvesting

    Haoran Yang;Luis A. Jauregui;Genqiang Zhang;Yong P. Chen

  • Effect of electron-beam irradiation on graphene field effect devices

    Isaac Childres;Luis A. Jauregui;Michael Foxe;Michael Foxe;Jifa Tian

  • AFM local oxidation nanolithography of graphene

    Lishan Weng;Liyuan Zhang;Yong P. Chen;Leonid P. Rokhinson

  • Quantized Hall effect and Shubnikov-de Haas oscillations in highly doped Bi2Se3: evidence for layered transport of bulk carriers.

    Helin Cao;Jifa Tian;Ireneusz Miotkowski;Tian Shen;Tian Shen

  • Photocarrier generation from interlayer charge-transfer transitions in WS2-graphene heterostructures

    Long Yuan;Ting Fung Chung;Agnieszka Kuc;Agnieszka Kuc;Yan Wan

  • Effect of oxygen plasma etching on graphene studied with Raman spectroscopy and electronic transport

    Isaac Childres;Luis A. Jauregui;Jifa Tian;Yong P. Chen

  • Growth of single crystal graphene arrays by locally controlling nucleation on polycrystalline Cu using chemical vapor deposition.

    Wei Wu;Luis A. Jauregui;Zhihua Su;Zhihong Liu

  • Thermal conductivity and thermal rectification in graphene nanoribbons: a molecular dynamics study

    Jiuning Hu;Xiulin Ruan;Zhigang Jiang;Yong Chen

Frequent Co-Authors

Xiulin Ruan
Xiulin Ruan Purdue University West Lafayette
Jiming Bao
Jiming Bao University of Houston
Alexandra Boltasseva
Alexandra Boltasseva Purdue University West Lafayette
Ken W. West
Ken W. West Princeton University
Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Vladimir M. Shalaev
Vladimir M. Shalaev Purdue University West Lafayette
Alexander V. Kildishev
Alexander V. Kildishev Purdue University West Lafayette
M. Zahid Hasan
M. Zahid Hasan Princeton University
Li Shi
Li Shi The University of Texas at Austin

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