maxim shatalov

Best Publications

• III-Nitride UV Devices

  M. Asif Khan;M. Shatalov;H. P. Maruska;H. M. Wang

  514
  Citations

• 250nmAlGaN light-emitting diodes

  V. Adivarahan;W. H. Sun;A. Chitnis;M. Shatalov

  270
  Citations

• Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

  J. P. Zhang;A. Chitnis;V. Adivarahan;S. Wu

  269
  Citations

• Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

  Ashay Chitnis;Changqing Chen;Vinod Adivarahan;Maxim Shatalov

  268
  Citations

• High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

  V. Adivarahan;S. Wu;J. P. Zhang;A. Chitnis

  199
  Citations

• Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

  J. W. Yang;A. Lunev;Grigory Simin;A. Chitnis

  170
  Citations

• AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

  J. P. Zhang;X. Hu;Yu. Bilenko;J. Deng

  161
  Citations

• Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells

  Changqing Chen;Vinod Adivarahan;Jinwei Yang;Maxim Shatalov

  145
  Citations

• Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

  W. Sun;M. Shatalov;J. Deng;X. Hu

  137
  Citations

• Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells

  V. Adivarahan;A. Chitnis;J. P. Zhang;M. Shatalov

  133
  Citations

• Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes

  A. Chitnis;J. P. Zhang;V. Adivarahan;M. Shatalov

  122
  Citations

• Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm.

  Vinod Adivarahan;Jianping Zhang;Ashay Chitnis;Wu Shuai

  119
  Citations

• Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

  R. Jain;W. Sun;J. Yang;M. Shatalov

  119
  Citations

• Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers

  Jianping Zhang;J. Yang;Grigory Simin;M. Shatalov

  118
  Citations

• AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

  V. Adivarahan;S. Wu;A. Chitnis;R. Pachipulusu

  106
  Citations

• AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW

  W. H. Sun;J. P. Zhang;V. Adivarahan;A Chitnis

  103
  Citations

• Ultraviolet system for disinfection

  Michael Shur;Maxim Shatalov;Timothy James Bettles;Yuri Bilenko

  102
  Citations

• High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells

  A. Chitnis;A. Kumar;M. Shatalov;V. Adivarahan

  101
  Citations

• High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

  V. Adivarahan;S. Wu;W. H. Sun;V. Mandavilli

  101
  Citations

• Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire

  Z. Gong;M. Gaevski;V. Adivarahan;W. Sun

  101
  Citations

• Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes

  M. Shatalov;A. Chitnis;P. Yadav;Md. F. Hasan

  100
  Citations

• Storage device including ultraviolet illumination

  Michael Shur;Maxim Shatalov;Timothy James Bettles;Yuri Bilenko

  99
  Citations

• High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

  J. P. Zhang;H. M. Wang;W. H. Sun;V. Adivarahan

  95
  Citations

• Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm

  Wenhong Sun;Vinod Adivarahan;Maxim Shatalov;Youngbae Lee

  95
  Citations