World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
71
Citations
14961
World Ranking
4320
National Ranking
1156

j yang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where j yang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 278 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

j yang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where j yang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 71 D-Index — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

j yang is affiliated with Columbia University in the United States. Their academic profile indicates engagement in research and scholarship associated with this institution.

There are no specific recent papers, co-authors, publication venues, or book publications presently listed for j yang. Similarly, detailed information on their main fields of study, subfields, or main topics of work is not available. No awards or honors have been recorded for this researcher at this time.

The absence of detailed publication and research data suggests that j yang's contributions either have not yet been documented in accessible databases or are in early stages of academic development. Their connection to a major research university situates them within an environment conducive to scientific inquiry and academic collaboration.

Best Publications

  • AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

    M.A. Khan;X. Hu;G. Sumin;A. Lunev

  • AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

    M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin

  • Self-heating in high-power AlGaN-GaN HFETs

    R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur

  • Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

    X. Hu;A. Koudymov;Grigory Simin;J. Yang

  • Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

    B. P. Luther;S. E. Mohney;T. N. Jackson;M. Asif Khan

  • Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

    R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

  • AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

    V. Kumar;W. Lu;R. Schwindt;A. Kuliev

  • High-temperature performance of AlGaN/GaN HFETs on SiC substrates

    R. Gaska;Q. Chen;J. Yang;A. Osinsky

  • Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

    J. P. Zhang;H. M. Wang;M. E. Gaevski;C. Q. Chen

  • Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

    J. P. Zhang;A. Chitnis;V. Adivarahan;S. Wu

  • Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

    X. Hu;G. Simin;J. Yang;M. Asif Khan

  • Metal contacts to n-type GaN

    A. C. Schmitz;A. T. Ping;M. Asif Khan;Q. Chen

  • Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

    M. Asif Khan;Q. Chen;C. J. Sun;J. W. Yang

  • Visible-blind GaN Schottky barrier detectors grown on Si(111)

    A. Osinsky;S. Gangopadhyay;J. W. Yang;R. Gaska

  • Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

    E. Kuokstis;J. W. Yang;Grigory Simin;M. Asif Khan

  • Lattice and energy band engineering in AlInGaN/GaN heterostructures

    M. Asif Khan;J. W. Yang;Grigory Simin;R. Gaska

  • Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

    Leonid Chernyak;Andrei Osinsky;Henryk Temkin;J. W. Yang

  • Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

    J. P. Zhang;M. Asif Khan;W. H. Sun;H. M. Wang

  • Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

    M. Asif Khan;C. J. Sun;J. W. Yang;Q. Chen

  • DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

    A.T. Ping;Q. Chen;J.W. Yang;M.A. Khan

Frequent Co-Authors

Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Remis Gaska
Remis Gaska UVTON, Inc.
M. Asif Khan
M. Asif Khan University of South Carolina
Grigory Simin
Grigory Simin University of South Carolina
Vinod Adivarahan
Vinod Adivarahan Nitek (United States)
M.A. Khan
M.A. Khan University of South Carolina
Nezih Pala
Nezih Pala Florida International University
Rakesh K. Jain
Rakesh K. Jain Harvard University
Andrei Osinsky
Andrei Osinsky Corning (United States)
Ilesanmi Adesida
Ilesanmi Adesida University of Illinois at Urbana-Champaign

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