j yang

Overview

Best Publications

• AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

  M.A. Khan;X. Hu;G. Sumin;A. Lunev

  481
  Citations

• AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

  M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin

  441
  Citations

• Self-heating in high-power AlGaN-GaN HFETs

  R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur

  384
  Citations

• Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

  X. Hu;A. Koudymov;Grigory Simin;J. Yang

  378
  Citations

• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

  B. P. Luther;S. E. Mohney;T. N. Jackson;M. Asif Khan

  355
  Citations

• Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

  R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

  330
  Citations

• AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

  V. Kumar;W. Lu;R. Schwindt;A. Kuliev

  307
  Citations

• High-temperature performance of AlGaN/GaN HFETs on SiC substrates

  R. Gaska;Q. Chen;J. Yang;A. Osinsky

  291
  Citations

• Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

  J. P. Zhang;H. M. Wang;M. E. Gaevski;C. Q. Chen

  279
  Citations

• Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

  J. P. Zhang;A. Chitnis;V. Adivarahan;S. Wu

  269
  Citations

• Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

  X. Hu;G. Simin;J. Yang;M. Asif Khan

  266
  Citations

• Metal contacts to n-type GaN

  A. C. Schmitz;A. T. Ping;M. Asif Khan;Q. Chen

  256
  Citations

• Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors

  M. Asif Khan;Q. Chen;C. J. Sun;J. W. Yang

  249
  Citations

• Visible-blind GaN Schottky barrier detectors grown on Si(111)

  A. Osinsky;S. Gangopadhyay;J. W. Yang;R. Gaska

  210
  Citations

• Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

  E. Kuokstis;J. W. Yang;Grigory Simin;M. Asif Khan

  204
  Citations

• Lattice and energy band engineering in AlInGaN/GaN heterostructures

  M. Asif Khan;J. W. Yang;Grigory Simin;R. Gaska

  195
  Citations

• Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

  Leonid Chernyak;Andrei Osinsky;Henryk Temkin;J. W. Yang

  195
  Citations

• Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

  J. P. Zhang;M. Asif Khan;W. H. Sun;H. M. Wang

  187
  Citations

• Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

  M. Asif Khan;C. J. Sun;J. W. Yang;Q. Chen

  178
  Citations

• DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

  A.T. Ping;Q. Chen;J.W. Yang;M.A. Khan

  174
  Citations