World's Best Scientists 2026 revealed!
Takashi Suemasu

Takashi Suemasu

D-Index & Metrics

Materials Science

D-Index
54
Citations
10991
World Ranking
8873
National Ranking
517

Takashi Suemasu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Takashi Suemasu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 753 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Takashi Suemasu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Takashi Suemasu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 54 D-Index — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Takashi Suemasu is affiliated with the University of Tsukuba in Japan and has contributed extensively to research in engineering, materials science, and physics and astronomy. Their publication record spans 208 works in engineering, 129 in materials science, and 87 in physics and astronomy, indicating a multidisciplinary approach focused on applied physics and materials engineering.

Their research is concentrated in several subfields, including electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, electronic, optical and magnetic materials, and biomedical engineering. These areas reflect a broad engagement with both fundamental and applied aspects of materials and device physics.

The primary topics of Takashi Suemasu's work involve semiconductor materials and interfaces, chalcogenide semiconductor thin films, silicon and solar cell technologies, thin-film transistor technologies, semiconductor materials and devices, silicon nanostructures and photoluminescence, and nanowire synthesis and applications.

The scientist has published frequently in established venues, with notable contributions appearing in the Japanese Journal of Applied Physics (22 publications), Journal of Applied Physics (10 publications), Applied Physics Express (9 publications), Applied Physics Letters (8 publications), and the Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (7 publications).

Takashi Suemasu has coauthored extensively with several researchers, highlighting collaborative work with Kaoru Toko (112 joint publications), Takamitsu Ishiyama (29), Yudai Yamashita (20), Koki Nozawa (20), and Masami Mesuda (20). This network illustrates sustained partnerships in research spanning various topics related to materials and semiconductor devices.

Significant recent publications by Takashi Suemasu include:

  • "Metal-induced layer exchange of group IV materials," 2020, Journal of Physics D Applied Physics
  • "Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point," 2021, Nano Letters
  • "Strain effects on polycrystalline germanium thin films," 2021, Scientific Reports
  • "Record-High Hole Mobility Germanium on Flexible Plastic with Controlled Interfacial Reaction," 2021, ACS Applied Electronic Materials
  • "A comprehensive study on RbGeI3 based inorganic perovskite solar cell using green synthesized CuCrO2 as hole conductor," 2023, Journal of Photochemistry and Photobiology A Chemistry

Best Publications

  • Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region

    Takashi Suemasu;Yoichiro Negishi;Ken'ichiro Takakura;Fumio Hasegawa

  • Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

    K. Morita;Y. Inomata;T. Suemasu

  • Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy

    Katsuaki Toh;Takanobu Saito;Takashi Suemasu

  • Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations

    Tomoyuki Nakamura;Takashi Suemasu;Ken-ichiro Takakura;Fumio Hasegawa

  • Epitaxial Growth of Semiconducting BaSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy

    Yuya Inomata;Tomoyuki Nakamura;Takashi Suemasu;Fumio Hasegawa

  • Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

    Masakazu Baba;Katsuaki Toh;Kaoru Toko;Noriyuki Saito

  • High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer.

    Hiromasa Murata;Yoshiki Nakajima;Noriyuki Saitoh;Noriko Yoshizawa

  • Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    Takashi Suemasu;Noritaka Usami

  • Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells

    Suguru Yachi;Ryota Takabe;Hiroki Takeuchi;Kaoru Toko

  • Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    Kosuke O. Hara;Noritaka Usami;Kotaro Nakamura;Ryouta Takabe

  • Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications

    Takashi Suemasu

  • Epitaxial Growth of Semiconducting BaSi2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy

    Yuya Inomata;Tomoyuki Nakamura;Takashi Suemasu;Fumio Hasegawa

  • Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

    K. Toko;M. Kurosawa;N. Saitoh;N. Yoshizawa

  • Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current-Voltage Characteristics

    Takashi Suemasu;Kousuke Morita;Michitaka Kobayashi;Morihiko Saida

  • Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

    K. Toko;R. Numata;N. Oya;N. Fukata

  • Formation of β-FeSi 2 Layers on Si(001) Substrates

    Masaya Tanaka;Yoshinao Kumagai;Takashi Suemasu;Fumio Hasegawa

  • Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates

    Yoko Yasutomi;Keita Ito;Tatsunori Sanai;Kaoru Toko

  • Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy

    Michitaka Kobayashi;Yuta Matsumoto;Yoshitake Ichikawa;Dai Tsukada

  • Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

    T. Suemasu;Y. Negishi;K. Takakura;F. Hasegawa

  • High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization.

    Kaoru Toko;Ryota Yoshimine;Kenta Moto;Takashi Suemasu

  • Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

    K. O. Hara;N. Usami;K. Toh;M. Baba

Frequent Co-Authors

Noritaka Usami
Noritaka Usami Nagoya University
Takashi Sekiguchi
Takashi Sekiguchi University of Tsukuba
Masahiro Asada
Masahiro Asada Tokyo Institute of Technology
Minoru Asada
Minoru Asada Osaka University
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Koki Takanashi
Koki Takanashi Tohoku University
Masanobu Miyao
Masanobu Miyao Kyushu University
Tetsu Ohsuna
Tetsu Ohsuna Toyota Motor Corporation (Japan)
Jun Chen
Jun Chen Nankai University

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