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Takashi Suemasu

Takashi Suemasu

D-Index & Metrics

Materials Science

D-Index
54
Citations
10991
World Ranking
8875
National Ranking
517

Overview

Takashi Suemasu is affiliated with the University of Tsukuba in Japan and has contributed extensively to research in engineering, materials science, and physics and astronomy. Their publication record spans 208 works in engineering, 129 in materials science, and 87 in physics and astronomy, indicating a multidisciplinary approach focused on applied physics and materials engineering.

Their research is concentrated in several subfields, including electrical and electronic engineering, materials chemistry, atomic and molecular physics and optics, electronic, optical and magnetic materials, and biomedical engineering. These areas reflect a broad engagement with both fundamental and applied aspects of materials and device physics.

The primary topics of Takashi Suemasu's work involve semiconductor materials and interfaces, chalcogenide semiconductor thin films, silicon and solar cell technologies, thin-film transistor technologies, semiconductor materials and devices, silicon nanostructures and photoluminescence, and nanowire synthesis and applications.

The scientist has published frequently in established venues, with notable contributions appearing in the Japanese Journal of Applied Physics (22 publications), Journal of Applied Physics (10 publications), Applied Physics Express (9 publications), Applied Physics Letters (8 publications), and the Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (7 publications).

Takashi Suemasu has coauthored extensively with several researchers, highlighting collaborative work with Kaoru Toko (112 joint publications), Takamitsu Ishiyama (29), Yudai Yamashita (20), Koki Nozawa (20), and Masami Mesuda (20). This network illustrates sustained partnerships in research spanning various topics related to materials and semiconductor devices.

Significant recent publications by Takashi Suemasu include:

  • "Metal-induced layer exchange of group IV materials," 2020, Journal of Physics D Applied Physics
  • "Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point," 2021, Nano Letters
  • "Strain effects on polycrystalline germanium thin films," 2021, Scientific Reports
  • "Record-High Hole Mobility Germanium on Flexible Plastic with Controlled Interfacial Reaction," 2021, ACS Applied Electronic Materials
  • "A comprehensive study on RbGeI3 based inorganic perovskite solar cell using green synthesized CuCrO2 as hole conductor," 2023, Journal of Photochemistry and Photobiology A Chemistry

Best Publications

  • Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region

    Takashi Suemasu;Yoichiro Negishi;Ken'ichiro Takakura;Fumio Hasegawa

  • Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

    K. Morita;Y. Inomata;T. Suemasu

  • Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy

    Katsuaki Toh;Takanobu Saito;Takashi Suemasu

  • Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations

    Tomoyuki Nakamura;Takashi Suemasu;Ken-ichiro Takakura;Fumio Hasegawa

  • Epitaxial Growth of Semiconducting BaSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy

    Yuya Inomata;Tomoyuki Nakamura;Takashi Suemasu;Fumio Hasegawa

  • Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

    Masakazu Baba;Katsuaki Toh;Kaoru Toko;Noriyuki Saito

  • High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer.

    Hiromasa Murata;Yoshiki Nakajima;Noriyuki Saitoh;Noriko Yoshizawa

  • Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications

    Takashi Suemasu;Noritaka Usami

  • Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells

    Suguru Yachi;Ryota Takabe;Hiroki Takeuchi;Kaoru Toko

  • Determination of Bulk Minority-Carrier Lifetime in BaSi2 Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

    Kosuke O. Hara;Noritaka Usami;Kotaro Nakamura;Ryouta Takabe

  • Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications

    Takashi Suemasu

  • Epitaxial Growth of Semiconducting BaSi2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy

    Yuya Inomata;Tomoyuki Nakamura;Takashi Suemasu;Fumio Hasegawa

  • Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

    K. Toko;M. Kurosawa;N. Saitoh;N. Yoshizawa

  • Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current-Voltage Characteristics

    Takashi Suemasu;Kousuke Morita;Michitaka Kobayashi;Morihiko Saida

  • Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

    K. Toko;R. Numata;N. Oya;N. Fukata

  • Formation of β-FeSi 2 Layers on Si(001) Substrates

    Masaya Tanaka;Yoshinao Kumagai;Takashi Suemasu;Fumio Hasegawa

  • Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates

    Yoko Yasutomi;Keita Ito;Tatsunori Sanai;Kaoru Toko

  • Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy

    Michitaka Kobayashi;Yuta Matsumoto;Yoshitake Ichikawa;Dai Tsukada

  • Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

    T. Suemasu;Y. Negishi;K. Takakura;F. Hasegawa

  • High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization.

    Kaoru Toko;Ryota Yoshimine;Kenta Moto;Takashi Suemasu

  • Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon

    K. O. Hara;N. Usami;K. Toh;M. Baba

Frequent Co-Authors

Noritaka Usami
Noritaka Usami Nagoya University
Takashi Sekiguchi
Takashi Sekiguchi University of Tsukuba
Masahiro Asada
Masahiro Asada Tokyo Institute of Technology
Minoru Asada
Minoru Asada Osaka University
Yoshinao Kumagai
Yoshinao Kumagai Tokyo University of Agriculture and Technology
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Koki Takanashi
Koki Takanashi Tohoku University
Masanobu Miyao
Masanobu Miyao Kyushu University
Tetsu Ohsuna
Tetsu Ohsuna Toyota Motor Corporation (Japan)
Jun Chen
Jun Chen Nankai University

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