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Materials Science

D-Index
101
Citations
43503
World Ranking
1003
National Ranking
330

Physics

D-Index
104
Citations
46386
World Ranking
1428
National Ranking
749

Research.com Recognitions

  • 2008 - Fellow of the Materials Research Society
  • 2005 - David Turnbull Lectureship, Materials Research Society
  • 2004 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1986 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the development of ultrapure semiconductors and significant investigations of the spectroscopy of novel defects in them

Overview

Eugene E. Haller was affiliated with the Lawrence Berkeley National Laboratory in the United States. Their work made contributions within materials science, particularly focusing on semiconductors and defects within them.

Haller's career included recognition from various professional societies through several awards. These included:

  • Fellow of the Materials Research Society, awarded in 2008
  • David Turnbull Lectureship, Materials Research Society, awarded in 2005
  • Fellow of the American Association for the Advancement of Science (AAAS), awarded in 2004
  • Fellow of the American Physical Society (APS), awarded in 1986 with the citation: "For pioneering contributions to the development of ultrapure semiconductors and significant investigations of the spectroscopy of novel defects in them"

The scientist's research emphasized the development and study of ultrapure semiconductors. This involved significant spectroscopy work aimed at identifying and characterizing novel defects in semiconductor materials.

Specific details related to publications, co-authors, or fields and subfields of study were not extensively documented in the available data. However, the recognition by institutions such as the Materials Research Society and APS suggests a focus on materials research and applied physics.

Throughout their career, Eugene E. Haller contributed to the understanding of material purity and defect spectroscopy, which are important in advancing semiconductor technologies and materials science research.

Best Publications

  • The Multiband Imaging Photometer for Spitzer (MIPS)

    G. H. Rieke;E. T. Young;C. W. Engelbracht;D. M. Kelly

  • Band Anticrossing in GaInNAs Alloys

    W. Shan;W. Walukiewicz;J. W. Ager;E. E. Haller

  • Unusual properties of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Small band gap bowing in In1−xGaxN alloys

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

    J. Wu;W. Walukiewicz;K. M. Yu;W. Shan

  • Hydrogen interactions with defects in crystalline solids

    S. M. Myers;M. I. Baskes;H. K. Birnbaum;J. W. Corbett

  • Observation of crystalline C3N4.

    Kin Man Yu;Marvin L. Cohen;Marvin L. Cohen;E. E. Haller;E. E. Haller;W. L. Hansen

  • Defects in Semiconductors: Some Fatal, Some Vital

    Hans J. Queisser;Eugene E. Haller

  • Solid-state quantum memory using the 31 P nuclear spin

    John J. L. Morton;Alexei M. Tyryshkin;Richard M. Brown;Shyam Shankar

  • Effects of the narrow band gap on the properties of InN

    J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Thermal conductivity of germanium crystals with different isotopic compositions

    M. Asen-Palmer;K. Bartkowski;E. Gmelin;M. Cardona

  • Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser

    Bryan Ellis;Marie A. Mayer;Marie A. Mayer;Gary Shambat;Tomas Sarmiento

  • Temperature dependence of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • The Large APEX Bolometer Camera LABOCA

    G. Siringo;E. Kreysa;A. Kovacs;F. Schuller

  • Band Gap of Hexagonal InN and InGaN Alloys

    V.Yu. Davydov;A.A. Klochikhin;V.V. Emtsev;D.A. Kurdyukov

  • CUORE: A cryogenic underground observatory for rare events

    C. Arnaboldi;F.T. Avignone Iii;J. Beeman;J. Beeman;M. Barucci

  • Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

    V.Yu. Davydov;A.A. Klochikhin;V.V. Emtsev;S.V. Ivanov

  • The Large APEX BOlometer CAmera LABOCA

    G. Siringo;E. Kreysa;A. Kovács;F. Schuller

  • Silicon Self-Diffusion in Isotope Heterostructures

    H. Bracht;E. E. Haller;R. Clark-Phelps

  • Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

    S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad

  • Ultra-low Threshold electrically pumped quantum dot photonic crystal nanocavity laser

    Bryan Ellis;Marie A. Mayer;Gary Shambat;Tomas Sarmiento

Frequent Co-Authors

Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Kohei M. Itoh
Kohei M. Itoh Keio University
Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Kin Man Yu
Kin Man Yu City University of Hong Kong
G. Pessina
G. Pessina University of Milano-Bicocca
Yu G. Kolomensky
Yu G. Kolomensky University of California, Berkeley
K. M. Heeger
K. M. Heeger Yale University
William J. Schaff
William J. Schaff Cornell University
Junqiao Wu
Junqiao Wu University of California, Berkeley
Manuel Cardona
Manuel Cardona Max Planck Society

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