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Engineering and Technology
USA
2026

D-Index & Metrics

Engineering and Technology

D-Index
117
Citations
82016
World Ranking
60
National Ranking
24

Physics

D-Index
119
Citations
82851
World Ranking
826
National Ranking
444

Research.com Recognitions

  • 2026 - Research.com Engineering and Technology in United States Leader Award
  • 2025 - Research.com Engineering and Technology in United States Leader Award
  • 1988 - Fellow of American Physical Society (APS) Citation For numerous innovative contributions in molecular beam epitaxial growth of semiconductor structures

Overview

Hadis Morkoç is affiliated with Virginia Commonwealth University in the United States and has contributed extensively to research in materials science, engineering, and physics and astronomy. Their work spans several main fields of study, including Materials Science, Engineering, and Physics and Astronomy, with a focus on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Materials Chemistry, and Biomedical Engineering as key subfields.

The scientist's research concentrates on several main topics related to semiconductor materials and devices. These include Ga2O3 and related materials, GaN-based semiconductor devices and materials, ZnO doping and properties, semiconductor materials and devices broadly, plasmonic and surface plasmon research, photonic and optical devices, and optical coatings and gratings.

Their recent papers demonstrate a focus on semiconductor heterostructures and plasmonic materials, published mainly between 2020 and 2023. Notable papers include:

  • High-Performance BeMgZnO/ZnO Heterostructure Field-Effect Transistors, 2020, physica status solidi (RRL) - Rapid Research Letters
  • A Platform for Complementary Metal-Oxide-Semiconductor Compatible Plasmonics: High Plasmonic Quality Titanium Nitride Thin Films on Si (001) with a MgO Interlayer, 2021, Advanced Photonics Research
  • High-Quality Plasmonic Materials TiN and ZnO:Al by Atomic Layer Deposition, 2021, physica status solidi (RRL) - Rapid Research Letters
  • Comparative study of BeMgZnO/ZnO heterostructures on c-sapphire and GaN by molecular beam epitaxy, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor, 2023, Crystals

Hadis Morkoç has collaborated frequently with several researchers, with the most frequent co-authors being V. Avrutin, Ü. Özgür, Kai Ding, N. Izyumskaya, and E. Šermukšnis.

Their work has been published across multiple venues, with frequent publications in Advanced Electronic Materials, physica status solidi (RRL) - Rapid Research Letters, Crystals, Applied Physics Letters, and the Encyclopedia of RF and Microwave Engineering.

In 1988, they were awarded the Fellow of American Physical Society (APS) with a citation recognizing numerous innovative contributions in molecular beam epitaxial growth of semiconductor structures.

Best Publications

  • A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES

    Ü. Özgür;Ya. I. Alivov;C. Liu;A. Teke

  • GaN, AlN, and InN: A review

    S. Strite;H. Morkoç

  • Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

    H. Morkoç;S. Strite;G. B. Gao;M. E. Lin

  • Luminescence properties of defects in GaN

    Michael A. Reshchikov;Hadis Morkoç

  • Zinc Oxide: Fundamentals, Materials and Device Technology

    Hadis Morkoç;Ümit Özgür

  • Nitride Semiconductors and Devices

    Hadis Morkoç

  • ZnO Devices and Applications: A Review of Current Status and Future Prospects

    Ümit Özgür;Daniel Hofstetter;Hadis Morkoç

  • Emerging gallium nitride based devices

    S.N. Mohammad;A.A. Salvador;H. Morkoc

  • Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

    G. Martin;A. Botchkarev;Angus Rockett;H. Morkoç

  • Ferromagnetism of ZnO and GaN: A Review

    C. Liu;F. Yun;H. Morkoç

  • Transparent conducting oxides for electrode applications in light emitting and absorbing devices

    Huiyong Liu;V. Avrutin;N. Izyumskaya;Ü. Özgür

  • Gallium arsenide and other compound semiconductors on silicon

    S. F. Fang;K. Adomi;S. Iyer;H. Morkoç

  • Folded acoustic and quantized optic phonons in (GaAl)As superlattices.

    C. Colvard;T. A. Gant;M. V. Klein;R. Merlin

  • Excitonic fine structure and recombination dynamics in single-crystalline ZnO

    A. Teke;Ü. Özgür;S. Doğan;X. Gu

  • Progress and prospects of group-III nitride semiconductors

    S.N Mohammad;H Morkoç

  • "Dressed excitons" in a multiple-quantum-well structure: Evidence for an optical Stark effect with femtosecond response time.

    A. Mysyrowicz;D. Hulin;A. Antonetti;A. Migus

  • Low resistance ohmic contacts on wide band‐gap GaN

    M. E. Lin;Z. Ma;F. Y. Huang;Z. F. Fan

  • Very low resistance multilayer Ohmic contact to n‐GaN

    Zhifang Fan;S. Noor Mohammad;Wook Kim;Özgür Aktas

  • Processing, Structure, Properties, and Applications of PZT Thin Films

    N. Izyumskaya;Y.-I. Alivov;S.-J. Cho;H. Morkoç

  • Microwave ferrites, part 1: fundamental properties

    Ümit Özgür;Yahya Alivov;Hadis Morkoç

  • Resonant cavity-enhanced (RCE) photodetectors

    K. Kishino;M.S. Unlu;J.-I. Chyi;J. Reed

Frequent Co-Authors

Ümit Özgür
Ümit Özgür Virginia Commonwealth University
John F. Klem
John F. Klem Sandia National Laboratories
Jen-Inn Chyi
Jen-Inn Chyi National Central University
M. S. Ünlü
M. S. Ünlü Boston University
David K. Ferry
David K. Ferry Arizona State University
Angus Rockett
Angus Rockett Colorado School of Mines
David J. Smith
David J. Smith Arizona State University
Romuald Houdré
Romuald Houdré École Polytechnique Fédérale de Lausanne
Jingyu Lin
Jingyu Lin Texas Tech University
Menghao Wu
Menghao Wu Huazhong University of Science and Technology

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